1. Synthesis of High-Density Indium Oxide Nanowires with Low Electrical Resistivity.
- Author
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Chen, Yu-Yang, Yang, Shu-Meng, and Lu, Kuo-Chang
- Subjects
NANOWIRES ,ELECTRICAL resistivity ,INDIUM oxide ,CHEMICAL vapor deposition ,CRYSTAL defects ,TRANSMISSION electron microscopy ,CARRIER gas - Abstract
In this study, indium oxide nanowires of high-density were synthesized by chemical vapor deposition (CVD) through a vapor–liquid–solid (VLS) mechanism without carrier gas. The indium oxide nanowires possess great morphology with an aspect ratio of over 400 and an average diameter of 50 nm; the length of the nanowires could be over 30 μm, confirmed by field-emission scanning electron microscopy (SEM). Characterization was conducted with X-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence spectrum (PL). High-resolution TEM studies confirm that the grown nanowires were single crystalline c-In
2 O3 nanowires of body-centered cubic structures. The room temperature PL spectrum shows a strong peak around 2.22 eV, originating from the defects in the crystal structure. The electrical resistivity of a single indium oxide nanowire was measured to be 1.0 × 10−4 Ω⋅cm, relatively low as compared with previous works, which may result from the abundant oxygen vacancies in the nanowires, acting as unintentional doping. [ABSTRACT FROM AUTHOR]- Published
- 2020
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