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Electric field control of magnetic properties has been achieved across a number of different material systems. In diluted magnetic semiconductors (DMSs), ferromagnetic metals, multiferroics, etc., electrical manipulation of magnetism has been observed. Here, we study the effect of an electric field on the carrier spin polarization in DMSs (GaAsMn); in particular, emphasis is given to spin-dependent transport phenomena. In our system, the interaction between the carriers and the localized spins in the presence of electric field is taken as the main interaction. Our results show that the electric field plays a major role on the spin polarization of carriers in the system. This is important for spintronics application. [ABSTRACT FROM AUTHOR]

We investigated magneto-electrical properties and the effect of intrinsic point defects in the lattice on film properties of 10 mol% cobalt containing ZnO thin films that were doped with 0.7 ± 0.1 to 1.1 ± 0.2 mol% W atoms. Thin films were deposited on Si (100) substrates. The anomalous Hall Effect seen in magneto-electrical measurements indicated a correlation between the polarized spins and the positive magneto-resistivity due to hole and electron mediated interactions. N-type carriers were dominant in conductivity, as shown by Hall resistance measurements. The 55 % positive magneto-resistivity and the split of 132.3 ± 0.1 Ω and 28.5 ± 0.1 Ω differences in the magneto-hysteresis curves through both negative and positive regions, respectively, proved that a polarized spin current was effectively formed under both s-d and p-d interactions. In addition, the shallow energy levels, close to extreme points of conduction and valance bands, reinforced the polarized spin current. [ABSTRACT FROM AUTHOR]

The spin-polarized electronic band structure calculations are carried out to theoretically investigate the effect of anti-site disordering to the electronic band structure and magnetic properties of LiMgPdSb-type CoFeTiAl alloy. We found that the Co–Ti and Fe–Ti antisite disordering can induce the diluted magnetism in CoFeTiAl alloy. Especially, the Fe–Ti antisite disordering can induce a 100% spin polarization at the Fermi level at a certain degree of anti-site disordering. The Co–Fe antisite disordering is easy to occur in CoFeTiAl alloy but has little effect on the semiconductive characteristic and magnetic properties. The Co, Fe and Ti atoms at the anti-site contribute the magnetization in CoFeTiAl alloy. The diluted magnetism in CoFeTiAl alloy can be induced by the anti-site disordering instead of the introduction of magnetic dopant elements. [ABSTRACT FROM AUTHOR]

Spin polarized van der Waals (vdW) heterostructures have attracted considerable interest owing to the spin splitting manipulation. In this paper, first-principles calculations are employed to explore the two-dimensional arsenene/CrI 3 vdW heterostructure as a promising spin polarized material, as well as the spin polarization under strain and electronic field are investigated. The most stable stacking configuration and ferromagnetic (FM) property of the arsenene/CrI 3 vdW heterostructure have been confirmed. The detailed calculations show that the Curie temperature (T c) of the FM coupling CrI 3 layer in the heterostructure can be enhanced up to 61 K, which is attributed to both superexchange interaction and proximity exchange effect. The electronic structures suggest that this heterostructure possess an intrinsic type-II band alignment and diluted magnetic semiconductor property. Interestingly, we found a transition from diluted magnetic semiconductor to half-metal and gradually to metal induced by the biaxial strains, and the extra electronic field can modulate the "maxican hat" of the valance band maximum (VBM) of arsenene. Our work provides not only application prospects of the arsenene/CrI 3 vdW heterostructure nanodevices but also theoretical effective support for the research and development of the spin electronics and flexible electronics. • The arsenene/CrI 3 heterostructure possess an intrinsic type-II band alignment and diluted magnetic semiconductor property. • Biaxial strains can make arsenene/CrI 3 heterostructure transform from diluted magnetic semiconductor to half-metal and gradually to metal. • Electronic field can change the contribution of As and I atoms in VBM, enlarge the band gap. [ABSTRACT FROM AUTHOR]

In this paper, we investigate electronic transport through II-VI semiconductor resonant-tunneling structures containing diluted magnetic impurities. Due to the exchange interaction between the conduction electrons and the impurities, there arises a giant Zeeman splitting in the presence of a moderately low magnetic field. As a consequence, when the quantum well is magnetically doped, the current-voltage characteristics shows two peaks corresponding to transport for each spin channel. This behavior is experimentally observed and can be reproduced with a simple tunneling model. The model thus allows to analyze other configurations. First, we further increase the magnetic field, which leads to a spin polarization of the electronic current injected from the leads, thus giving rise to a relative change in the current amplitude. We demonstrate that the spin polarization in the emitter can be determined from such a change. Furthermore, in the case of an injector with magnetic impurities, our model shows a large increase in peak amplitude accompanied by a shift of the resonance to higher voltages with increasing fields. We find that this effect arises from a combination of 3-D incident distribution, giant Zeeman splitting, and broad resonance linewidth. [ABSTRACT FROM AUTHOR]