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PbZrO3 has been broadly considered as a prototypical antiferroelectric material for high-power energy storage. A recent theoretical study suggests that the ground state of PbZrO3 is threefold-modulated ferrielectric, which challenges the generally accepted antiferroelectric configuration. However, such a novel ferrielectric phase was predicted only to be accessible at low temperatures. Here, we successfully achieve the room-temperature construction of the strongly competing ferrielectric and antiferroelectric state by strain-mediated phase separation in PbZrO3/SrTiO3 thin film. We demonstrate that the phase separation occurs spontaneously in quasi-periodic stripe-like patterns under a compressive misfit strain and can be tailored by varying the film thickness. The ferrielectric phase strikingly exhibitsa threefold modulation period with a nearly up-up-down configuration, which could be stabilized and manipulated by the formation and evolution of interfacial defects under applied strain. The present results construct a fertile ground for further exploring the physical properties and applications based on the novel ferrielectric phase. There is a desire to know how the threefold ferrielectric coexists with the antiferroelectric phase. Here, the authors realize a threefold-modulated ferrielectric phase regulated by strain-mediated phase separation in PbZrO3 thin film. [ABSTRACT FROM AUTHOR]

Benefitting from the reversible phase transition between antiferroelectric and ferroelectric states, antiferroelectric materials have recently received widespread attentions for energy storage applications. Antiferroelectric configuration with specific antiparallel dipoles has been used to establish antiferroelectric theories and understand its characteristic behaviors. Here, we report that the so-called antiferroelectric (Pb,La)(Zr,Sn,Ti)O3 system is actually ferrielectric in nature. We demonstrate different ferrielectric configurations, which consists of ferroelectric ordering segments with either magnitude or angle modulation of dipoles. The ferrielectric configurations are mainly contributed from the coupling between A-cations and O-anions, and their displacement behavior is dependent largely on the chemical doping. Of particular significance is that the width and net polarization of ferroelectric ordering segments can be tailored by composition, which is linearly related to the key electrical characteristics, including switching field, remanent polarization and dielectric constant. These findings provide opportunities for comprehending structure-property correlation, developing antiferroelectric/ferrielectric theories and designing novel ferroic materials. The large family PbZrO3-based solid solutions are usually considered as antiferroelectric materials with specific antiparallel polarization configuration. Here, the authors demonstrate the PbZrO3-based material has ferrielectric dipoles ordering and configure a clear structure-property relationship. [ABSTRACT FROM AUTHOR]

The electrical hysteresis behaviors and energy storage performance of Pb0.97La0.02(Zr0.58Sn0.335Ti0.085)O3 antiferroelectric ( AFE) ceramics were studied under the combined effects of electric field and temperature. It was observed that the temperature dependence of recoverable energy density ( Wre) of AFE ceramics depends critically on the applied electric field. While Wre at lower electric fields (<8 kV/mm) shows increasing tendency with increasing temperature from 20°C to 100°C, Wre at higher electric fields (>8 kV/mm) demonstrates decreasing dependence. There exists an appropriate electric field (8 kV/mm) under which the AFE ceramics exhibit nearly temperature-independent Wre (the variation is less than 0.5% per 10°C). The underlying physical principles were also discussed in this study. These results indicate that the temperature dependence of Wre of AFE materials can be tuned through selecting appropriate electric fields and provide an avenue to obtain thermal stable energy storage capacitors, which should be of great interest to modern energy storage community. [ABSTRACT FROM AUTHOR]

Recently, the (Pb,La)(Zr,Ti)O 3 antiferroelectric materials with slim-and-slanted double hysteresis loops have been widely drawn in the application of advanced pulsed power capacitors due to its low strain characteristic. In this work, the energy storage properties of (Pb 0.895 La 0.07)(Zr x Ti 1- x)O 3 ceramics with different Zr contents are researched thoroughly because the substitution of Ti4+ by Zr4+ can reduce the tolerance factor t , enhancing the antiferroelectricity. The polarization-electric field hysteresis loops of the PLZT ceramics become slimmer with increasing Zr content. The highest recoverable energy storage density (W re) of 3.38 J/cm3 and ultrahigh energy efficiency (η) of 86.5% are achieved in (Pb 0.895 La 0.07)(Zr 0.9 Ti 0.1)O 3 ceramic. The (Pb 0.895 La 0.07)(Zr 0.9 Ti 0.1)O 3 ceramic also hold fairly thermal stability (relative variation of W re is less than 28% over 30 °C-120 °C), excellent frequency stability (10–1000 Hz) and good fatigue endurance. These results demonstrate that the (Pb 0.895 La 0.07)(Zr 0.9 Ti 0.1)O 3 ceramic can be a desirable material for dielectric energy storage capacitors, especially for pulse power technology. [ABSTRACT FROM AUTHOR]

Abstract Bulk ceramics with high recoverable energy density (W re) and energy efficiency (η) play a critical role in the development of pulsed power systems for miniaturization and lightweight. The orthorhombic phase (Pb,La)(Zr,Ti)O 3 -based antiferroelectric (AFE) ceramics have been regarded as one of the most promising candidates for pulsed power system applications due to their relatively high energy storage density and efficiency. However, the main drawback of orthorhombic phase (Pb,La)(Zr,Ti)O 3 -based AFE ceramics is relatively low dielectric breakdown strengthen (DBS), which has always restricted the improvement of energy storage density. In this study, an effectively method to increase DBS by the introduction of Mn has been proposed. The relative density of orthorhombic phase (Pb 0.91 La 0.06)(Zr 0.96 Ti 0.04)O 3 (PLZT) ceramics was improved by Mn-doping. And the introduction of Mn can decrease the tolerance factor (t) of PLZT ceramics because the radius of Mn2+ is larger than that of B-site Zr4+/Ti4+, and thus enhancing antiferroelectricity. Meanwhile, the effects of Mn-doping on the phase structure, microstructure and dielectric properties of PLZT ceramics have been studied thoroughly in this study. It is found that the highest W re of 7.65 J/cm3 is obtained at 1.0 mol% Mn-doped PLZT ceramic, which is obviously larger than that of undoped PLZT ceramic (5.71 J/cm3). These results suggest that the Mn-doped PLZT ceramics are potential energy storage materials in pulsed power systems. Highlights • Enhanced the dielectric breakdown strengthen of pure antiferroelectric ceramics by Mn-doping. • Obtained a high recoverable energy density of 7.65 J/cm3 and relatively high η of 87% in Mn-doped antiferroelectric ceramics. • Better understanding of the mechanism on energy storage properties of Mn-doped antiferroelectric ceramics. [ABSTRACT FROM AUTHOR]

The composition dependent dielectric, ferroelectric and energy storage properties of tetragonal lead lanthanum zirconate stannate titanate (PLZST) antiferroelectric ceramics were systematically studied in this paper. Two sets of simple linear scaling relations were established for the forward switching field E AFE-FE , the backward switching field E FE-AFE and recoverable energy density W re . As Zr content increases (Ti fixed), E AFE-FE , E FE-AFE , W re decreases linearly, while the stored energy density W st declines first and then increases. In addition, decreasing Ti content (Zr fixed) leads to linear increments in all of E AFE-FE , E FE-AFE , W re and W st . These results not only reveal the superiority of PLZST with lower Zr and lower Ti contents for energy storage capacitors, but also provide a fast way to design PLZST ceramics with specific energy storage properties. Our work may also be very helpful for better understanding the mechanism of phase transition behaviors of antiferroelectric materials. [ABSTRACT FROM AUTHOR]