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Abstract MoS2 has attracted intense interest in many applications. Natural MoS2 and field-effect transistors made of it generally exhibit n-type characteristics, but its origin is unknown. Herein, we show that C is the origin of the universal n-type doping of natural MoS2. Photoemission spectroscopies reveal that while many MoS2 samples with C detected are n-type, some without C exhibit p-type characteristics. The C-free, p-type MoS2 changes to n-type over time with the concurrent appearance of C that is out-diffused from bulk, indicating that C induces the n-type doping. The C-origin is verified by C-deposition and supported by theoretical calculations. This carbon appears as nanometer-scale defects frequently observed in scanning tunneling microscopy. In addition, we propose, based on the calculations, that S vacancies are responsible for the p-type characteristics, which contrasts with the widespread belief. This work provides new perspectives on MoS2 doping and presents a new direction for fabricating reliable MoS2 devices.

Vanadium ditelluride (VTe2) has been intensively explored to understand the charge density wave (CDW) phase and its connection to magnetic properties. Here, we conduct a systematic study to understand the fine structure of CDW via scanning tunneling microscopy (STM) combined with density functional theory (DFT) calculations. STM topograph at 79 K shows that a CDW phase in VTe2 has a stripe modulation with 3 × 1 periodicity, following the double zigzag chain of distorted Te lattices. Interestingly, the 3 × 1 CDW modulation undergoes contrast inversion between filled and empty state topographs. Atomistic features and contrast changes of CDW observed in STM are clearly reproduced in our DFT simulation images. Charge distribution calculation indicates that the spatial extension and density of Te 5p orbitals have strong variations with filled and empty states, explaining the fine structure of 3 × 1 CDW in VTe2. Our finding provides an inspiring insight to further research on the less explored electronic structure of VTe2.

Impurities interact with a charge density wave (CDW) and affect the phase transitions in low-dimensional systems. By using scanning tunneling microscopy, we visualize the interaction between oxygen impurities and the CDW in indium atomic wires on Si(111), a prototypical one-dimensional electronic system, and unveil the microscopic mechanism of the intriguing O-induced increase of the transition temperature ( T _c ). Driven by the fluctuating CDW, the O atoms adopt an asymmetric structure. By adjusting the asymmetry, a pair of O impurities in close distance can pin the one-dimensional CDW, which develops into the two-dimensional domains. First-principles calculations showed that the asymmetric interstitially-incorporated O defects induce shear strains, which assists the formation of hexagon structure of the CDW phase. The cooperative interplay between the O impurities and the CDW is responsible for the enhancement of the CDW condensation and the consequent increase in T _c .

The electron conduction mechanism in indium oxide (In2O3) and its implications for amorphous transport have been investigated from an orbital overlap perspective. Combined density functional theory and empirical tight binding modeling reveal that the electron transport is facilitated by the neighboring metal atomic s orbital overlap "without" oxygen's p-orbital involvement. In other words, the electron transport pathway in oxides is only due to the metal-metal medium range connection. This electron conduction mechanism is extended to amorphous In2O3 which unveils that the amorphous disorder influences the electron transport through impacting the metal-metal medium range order including metal-metal coordination number and metal-metal separation. Our results provide an insight into the current theoretical understanding of electron transport in amorphous oxide semiconductors. [ABSTRACT FROM AUTHOR]

MoS2 has attracted intense interest in many applications. Natural MoS2 and field-effect transistors made of it generally exhibit n-type characteristics, but its origin is unknown. Herein, we show that C is the origin of the universal n-type doping of natural MoS2. Photoemission spectroscopies reveal that while many MoS2 samples with C detected are n-type, some without C exhibit p-type characteristics. The C-free, p-type MoS2 changes to n-type over time with the concurrent appearance of C that is out-diffused from bulk, indicating that C induces the n-type doping. The C-origin is verified by C-deposition and supported by theoretical calculations. This carbon appears as nanometer-scale defects frequently observed in scanning tunneling microscopy. In addition, we propose, based on the calculations, that S vacancies are responsible for the p-type characteristics, which contrasts with the widespread belief. This work provides new perspectives on MoS2 doping and presents a new direction for fabricating reliable MoS2 devices. [ABSTRACT FROM AUTHOR]

Vanadium ditelluride (VTe2) has been intensively explored to understand the charge density wave (CDW) phase and its connection to magnetic properties. Here, we conduct a systematic study to understand the fine structure of CDW via scanning tunneling microscopy (STM) combined with density functional theory (DFT) calculations. STM topograph at 79 K shows that a CDW phase in VTe2 has a stripe modulation with 3 × 1 periodicity, following the double zigzag chain of distorted Te lattices. Interestingly, the 3 × 1 CDW modulation undergoes contrast inversion between filled and empty state topographs. Atomistic features and contrast changes of CDW observed in STM are clearly reproduced in our DFT simulation images. Charge distribution calculation indicates that the spatial extension and density of Te 5p orbitals have strong variations with filled and empty states, explaining the fine structure of 3 × 1 CDW in VTe2. Our finding provides an inspiring insight to further research on the less explored electronic structure of VTe2. [ABSTRACT FROM AUTHOR]

Substitutional doping in 2D semiconductor MoS2 was investigated by charge transition level (CTL) calculations for Nitrogen group (N, P, As, Sb) and Halogen group (F, Cl, Br, I) dopants at the S site of monolayer MoS2. Both n-type and p-type dopant levels are calculated to be deep mid-gap states (~1 eV from band edges) from DFT total energy-based CTL and separate DFT + GW calculations. The deep dopant levels result from the giant renormalization of hydrogen-like defect states by reduced dielectric screening in ultrathin 2D films. Theoretical analysis based on Keldysh formulation provides a consistent impurity binding energy of ~1 eV for dielectric thin films. These findings of intrinsic deep impurity levels in 2D semiconductors MoS2 may be applicable to diverse novel emerging device applications. [ABSTRACT FROM AUTHOR]

A correction to the acknowledgement section of the article “Magnetic Transition to Antiferromagnetic Phase in Gadolinium Substituted Topological Insulator Bi2Te3" that was published in the May 14, 2015 issue is presented.

First principle calculation based on density functional theory (DFT) was used to evaluate some physical properties of Uranium Nitrides. Adsorption of oxygen O atom and O2 molecule on/in (001) surfaces of both Uranium monoNitride (UN) and diNitride (UN2) was then studied and compared mutually. To treat the strong correlation effects caused by 5f Uranium valence electrons, Hubbard-U advanced (DFT + U) approach was employed to correct the exchange correlation functional GGA and PBE which are based on generalized gradient approximation. The functional are developed for the Vienna Abinitio Simulation Package (VASP) and were used with the projector-augmented wave (PAW) pseudo potentials. The structural and elastic-mechanical UN and UN2 properties were calculated within DFT and DFT + U methods. Then, Potential Energy Surfaces (PES) concepts which correspond to the interaction between O atom (respectively O2 molecule) and (001) on-surfaces / sub-surfaces uranium nitrides for several positions were determined to identify favorable adsorption sites. Physical properties calculation results of UN or UN2 are in order of magnitude of other theoretical values and show an acceptable precision compared to experiments. Hubbard U value of the DFT + U formalism was optimized to achieve Antiferromagnetic (AFM) UN configuration and was effective at U = 1.625 eV. Optimization of UN2 was accomplished to attain experimental cell parameter of 5.31 A° and was reached for U = 2.6 eV. According to our calculation results, O2 diffusion through UN(001) and UN2(001) clean surfaces have demonstrated dissociation of the molecule from a distance of approximately d = 1.5 Å. Favored on surface modes for O atom adsorption were found to be near the bridge site for UN(001) and UN2(001). The O incorporation through UN(001) surface was at the bridge site, nevertheless, for UN2, merging of O atom in the (001) surface bridge site was not allowed. [ABSTRACT FROM AUTHOR]

The introduction of ferromagnetic order in topological insulators in general breaks the time-reversal symmetry and a gap is opened in topological surface bands. Various studies have focused on gap-opened magnetic topological insulators, because such modified band structures provide a promising platform for observing exotic quantum physics. However, the role of antiferromagnetic order in topological insulators is still controversial. In this report, we demonstrate that it is possible to restore the topological surface states by effectively reducing the antiferromagnetic ordering in Gd-substituted Bi2Te3. We successfully control the magnetic impurities via thermal treatments in ultra-high vacuum condition and observe apparent restoration of topological surface band dispersions. The microscopic mechanism of atomic rearrangements and the restoration process of topological surface states are unraveled by the combination of scanning tunneling microscopy measurements and density functional theory calculations. This work provides an effective way to control the magnetic impurities which is strongly correlated with topological surface states. [ABSTRACT FROM AUTHOR]