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Solution-processed organic thin-film transistors (OTFTs) are regarded as the promising candidates for low-cost gas sensors due to their advantages of high throughput, large-area and sensitive to various gas analytes. Microstructure control of organic active layers in OTFTs is an effective route to improve the sensing performance. In this work, we report a simple method to modify the morphology of 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) thin films via doping gold nanorods (Au NRs) for enhancing the performance of the corresponding OTFT sensors for nitrogen dioxide (NO2) detection. With the optimized doping ratio of Au nanorods, the TIPS-pentacene OTFT snesors not only exhibit a 3-fold increase in mobility, but also obtain a high sensitivity of 70% to 18 ppm NO2 with a detection limit of 270 ppb. The microstructures and morphologies of the modified TIPS-pentacene thin film characterized by atomic force microscopy and field scanning electron microscope. The experimental results indicate that the proper addition of Au NRs could effectively regulate the grain size of TIPS-pentacene, and therein control the density of grain boundaries during the crystallization, which is essential for the high-performance gas sensors. [ABSTRACT FROM AUTHOR]

Influences of the Si doping on the structural and optical properties of the InGaN epilayers are investigated in detail by means of high-resolution X-ray diffraction (HRXRD), photolumimescence (PL), scanning electron microscope (SEM), and atomic force microscopy (AFM). It is found that the Si doping may improve the surface morphology and crystal quality of the InGaN film and meanwhile it can also enhance the emission efficiency by increasing the electron concentration in the InGaN and suppressing the formation of V-defects, which act as nonradiative recombination centers in the InGaN, and it is proposed that the former plays a more important role in enhancing the emission efficiency in the InGaN. [ABSTRACT FROM AUTHOR]

Carbon nanotubes are considered to be an ideal imaging tip for atomic force microscopy (AFM) applications, and a number of methods for fabricating these types of probe have been developed in recent years. This work reports the attachment of carbon nanotubes to AFM probes using a micromanipulator within a scanning electron microscope. Electron beam induced deposition and etching are used to enhance the quality and attachment of the carbon nanotube tip and improve the fabrication rate of the CNT AFM probes compared to existing techniques. The attachment process is also improved by using a mat of SWCNTs (buckypaper) as a CNT source, which simultaneously improves the ease of fabrication and rate of nanotube probe production. The aim of these improvements is to simplify and improve the attachment process such that these probes can be better and more widely used in applications that benefit from their unique properties. This improved process is then used to attach CNTs to the new generation of low-mass, high-frequency probes, which are designed for rapid AFM imaging. The ability of these probes to operate with CNT tips is demonstrated, and their wear-resistance properties were found to be significantly enhanced compared to unmodified probes. These wear-resistant probes imaging at high scan rates are proposed to be effective tools for increasing throughput in metrological analysis, particularly for imaging high-modulus surfaces with high roughness and high-aspect-ratio features. [ABSTRACT FROM AUTHOR]

We present a simulation study on the peeling of carbon nanotubes bundles interacting with a flat substrate, represented by the back surface of an atomic force microscopy cantilever. A defected sample, acquired in situ using a scanning electron microscope, was investigated under different peeling configurations by finite element method simulations. The coupled computational-experimental analysis let to identify the position and the entity of a structural defect by means of reverse image correlation problem. By exploiting this defective fiber it was also possible to quantify, as indirect measure, the friction and adhesion forces between the bundle and the substrate of few pN magnitude, otherwise difficult to measure with the resolution of currently available instruments. The proposed approach can be useful to study the tribology-induced mechanical behavior of one-dimensional nanostructures as well as for real-time identification and monitoring of nanodefects for industrial applications, such as nanoelectronics. [ABSTRACT FROM AUTHOR]

In our previous study, an instrument for characterizing mechanical properties under multi-mechanical load and multi-physical field coupling conditions was designed and constructed. Given the structural interference, the linear and shear strains in tension–torsion coupling testing were measured indirectly using linear and circular grating encoders rather than the extensometers in a conventional material testing machine. Accordingly, to correct the experimental curves measured using grating encoders, a correction method was proposed using equations based on the analysis of specimen geometry and instrument structure by elasticity theory. The feasibility of the correction method under single load and tension–torsion coupling loads were verified by the contrast tests among curves of grating encoders’, curves of extensometers, and results of a digital image correlation (DIC) measuring system. Test results illustrate that the correction method can convert the displacement measured using grating encoders to the deformation of the specimen in the elastic range, and the measuring error of elastic moduli can be reduced to approximately 1/5–1/50 of the original measurement results. The defect on accuracy of this instrument, which is incompatible with extensometers, can be compensated. Overall, the main sources of error in these devices are the deformation of the load cell and that on the non-gage section of specimen. This conclusion can provide guidance on the design of other similar devices. [ABSTRACT FROM AUTHOR]

Tin oxide (SnO2) is one of the most promising transparent conducting oxide materials, which is widely used in thin film gas sensors. We investigate the dependence of the deposition time on structural, morphological and hydrogen gas sensing properties of SnO2 thin films synthesized by dc magnetron sputtering. The deposited samples are characterized by XRD, SEM, AFM, surface area measurements and surface profiler. Also the H2 gas sensing properties of SnO2 deposited samples are performed against a wide range of operating temperature. The XRD analysis demonstrates that the degree of crystallinity of the deposited SnO2 films strongly depends on the deposition time. SEM and AFM analyses reveal that the size of nanoparticles or agglomerates, and both average and rms surface roughness is enhanced with the increasing deposition time. Also gas sensors based on these SnO2 nanolayers show an acceptable response to hydrogen at various operating temperatures. [ABSTRACT FROM AUTHOR]

Epitaxial (BixSb1−x)2Te3 films with (0 < x < 1) were grown by the metal-organic chemical vapour deposition (MOCVD) process at 400 °C using the tailor-made precursors Et2Te2, i-Pr3Sb and Et3Bi. The films grown on Al2O3(0001) substrates show a very smooth surface morphology as shown by a scanning electron microscope (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM), while those grown on Si(100) are rather polycrystalline. The chemical composition of the crystalline films (x-ray powder diffraction (XRD)) was investigated by energy-dispersive x-ray (EDX) and x-ray photoelectron spectroscopy (XPS), and the in-plane transport properties were measured, and a strong dependency from the bismuth content was found, which allows the tuning of the carrier concentration and mobility in a wide range. [ABSTRACT FROM AUTHOR]

In atomic force microscopy (AFM) investigations, knowledge of the cantilever tip radius R is essential for the quantitative interpretation of experimental observables. Here we propose two techniques to rapidly quantify in-situ the effective tip radius of AFM probes. The first method is based on the strong dependency of the minimum value of the free amplitude required to observe a sharp transition from attractive to repulsive force regimes on the AFM probe radius. Specifically, the sharper the tip, the smaller the value of free amplitude required to observe such a transition. The key trait of the second method is to treat the tip–sample system as a capacitor. Provided with an analytical model that takes into account the geometry of the tip–sample’s capacitance, one can quantify the effective size of the tip apex fitting the experimental capacitance versus distance curve. Flowchart-like algorithms, easily implementable on any hardware, are provided for both methods, giving a guideline to AFM practitioners. The methods’ robustness is assessed over a wide range of probes of different tip radii R (i.e. 4 < R < 50 nm) and geometries. Results obtained from both methods are compared with the nominal values given by manufacturers and verified by acquiring scanning electron microscopy images. Our observations show that while both methods are reliable and robust over the range of tip sizes tested, the critical amplitude method is more accurate for relatively sharp tips (4 nm < R < 10 nm). [ABSTRACT FROM AUTHOR]

Sb2O3 microrods with orthorhombic phase were grown by an evaporation-deposition method from a pure antimony source and substrate. The incorporation of Cr into the substrate has been found to enhance the growth of thinner rods with high crystalline quality, as is revealed by high resolution transmission electron microscopy (HRTEM). Electric field–induced mechanical resonances of Sb2O3 nanorods were studied by in situ measurements in a scanning electron microscope (SEM). Young’s modulus of rods with different lengths and cross-sectional dimensions was calculated from the resonance frequency. The E values for the different rods were in the range of 16–48 GPa. For comparison, Young’s moduli of several rods were also measured from the force-displacement curve recorded in an atomic force microscope (AFM). The slight difference between the E values obtained by the resonance and by the AFM techniques is within the accepted experimental error. [ABSTRACT FROM AUTHOR]

A novel scanning electron microscope (SEM) method is presented for high contrast identification of each layer of pyramidal graphene domains grown on copper. We obtained SEM images by combining the advantages of the high resolution property of the secondary electron signal and the elemental sensitivity of the backscattering electron signal. Through this method, we investigated the difference in the growth mechanisms of mono-layer and few-layer graphene. Due to different lattice mismatches, both the surface adsorption process and the epitaxial growth process existed under the atmospheric growth conditions. Moreover, the copper oxidation process can be easily discovered. It is obvious from the SEM images that the graphene greatly delayed the oxidation process of the copper surface. Finally, the nucleation and growth speed of graphene domains was found to depend on the linear array distribution of surface ledges and terraces of annealed rolled copper foil. This result explains the linear rows of graphene during the growth process and accords with theoretical results. [ABSTRACT FROM AUTHOR]

This contribution discusses the developed approaches as well as the limitations of scanning electron microscopy (SEM) and atomic force microscopy (AFM) to measure topographic details of structures on lithographic masks and wafers aiming at uncertainties in the nanometre range or even below. In the first approximation, the SEM signal, that is the change of secondary electron (SE) yield, is interpreted as being due to the surface tilt contrast and SE diffusion from the sidewall. The signal is biased by the width of the initial electron beam and, in the case of smaller penetration depths of the initial electron beam, also by the corner rounding of the specimen. Oscillation mode AFMs have been operated such that steep edge regions could be resolved better than with standard scanning methods. A single-point probing strategy enables the instrument to approach the surface from any direction and to leave the probe in the interaction region for a minimum of time maintaining the tip geometry. The ambiguity of the AFM measurement due to the changing response behaviour of the oscillating probe at differing geometries is discussed. [ABSTRACT FROM AUTHOR]

A new experimental method to characterize the mechanical properties of metallic nanowires is introduced. An accurate and fast mechanical characterization of nanowires requires simultaneous imaging and testing of the nanowires. However, existing mechanical characterization techniques fail to accomplish this goal due either to the lack of imaging capability of the mechanical test setup or the difficulty of individual alignment and manipulation of single nanowires for each test. In this study, nanowire specimens prepared by an electroplating technique are located on a silicon substrate with trenches. A customized atomic force microscope is located inside a scanning electron microscope (SEM) in order to establish the visibility of the nanowires, and the tip of the atomic force microscope cantilever is utilized to bend and break the nanowires. The ability to visualize the nanowires in an SEM improves the speed and accuracy of the tests. Experimentally obtained force versus bending displacement curves are fitted into existing analytical formulations to extract the mechanical properties. Experimental results reveal that nickel nanowires have significantly higher strengths than their bulk counterparts, although their elastic modulus values are comparable to bulk nickel modulus values. [ABSTRACT FROM AUTHOR]

We created a test object of the linewidth with three different certified sizes. Relief structures of the test object are individual steps and protrusions, as well as pitch structures with trapezoidal profile, created by anisotropic etching of monosilicon. The orientation of the silicon surface coincides with the (1 0 0) crystallographic plane. The structures are located in two orthogonal directions. We present the results of the study of the individual relief elements (protrusions and steps) with the help of a scanning electron microscope (SEM) and an atomic-force microscope (AFM). The widths of the upper bases of the protrusions are in the 14-400 nm range. We performed a correlation analysis of the experimental results, which demonstrates the high quality of the created structures. [ABSTRACT FROM AUTHOR]

Functional devices can be directly assembled using microgrippers with an in situelectron microscope. Two simple and compact silicon microgripper designs are investigated here. These are operated by electrothermal actuation, and are used to transfer a catalytically grown multi-walled carbon nanofibre from a fixed position on a substrate to the tip of an atomic force microscope cantilever, inside a scanning electron microscope. Scanning of high aspect ratio trenches using the nanofibre supertip shows a significantly better performance than that with standard pyramidal silicon tips. Based on manipulation experiments as well as a simple analysis, we show that shear pulling (lateral movement of the gripper) is far more effective than tensile pulling (vertical movement of gripper) for the mechanical removal of carbon nanotubes from a substrate. [ABSTRACT FROM AUTHOR]