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5 results on '"Halfaya, Yacine"'

1. MOVPE growth of h-BN on patterned sapphire substrates and its application on selective area growth of GaN based LEDs structures

Author

Sundaram, Suresh, Karrakchou, Soufiane, Mballo, Adama, Vuong, Thi Quynh Phuong, Halfaya, Yacine, Patriarche, Gilles, Moudakir, Tarik, Voss, Paul, Salvestrini, Jean-Paul, Ougazzaden, Abdallah, Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), and DASTILLUNG, NADEGE

Subjects
[SPI]Engineering Sciences [physics], [SPI] Engineering Sciences [physics]
Abstract

Conférence invitée; International audience

Published
2021

2. Epitaxial growth and materials characterization of single crystalline boron rich B(AI)N ternary alloys

Author

Vuong, Thi quynh phuong, Mballo, Adama, Sundaram, Suresh, Patriarche, Gilles, Halfaya, Yacine, Moudakir, Tarik, Gautier, Simon, Voss, Paul, Salvestrini, Jean-Paul, Ougazzaden, Abdallah, DASTILLUNG, NADEGE, Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), and Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI]Engineering Sciences [physics], [SPI] Engineering Sciences [physics]
Abstract

Conférence invité; International audience

Published
2021

3. Impact of the Sensor Temperature on Low Acetone Concentration Detection Using AlGaN/GaN HEMTs

Author

Ahaitouf, Ali, Halfaya, Yacine, Sundaram, Suresh, Gautier, Simon, Voss, Paul, Salvestrini, Jean, Ougazzaden, Abdallah, Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), and FEDER

Subjects
drain current, AlGaN/GaN, [SPI]Engineering Sciences [physics], sensor, acetone, temperature, transistor, HEMT, sensing
Abstract

International audience; In this work, we report on AlGaN/GaN HEMT sensors for acetone concentration below 100 ppm and in a broad range of the sensor temperature varying from RT to 300 • C. At RT, in presence of acetone, a smooth and monotonic decrease of the current is observed with a rather large response of 15 µA/ppm and with large response time (several minutes) and memory effect. At high temperature (300 • C), a current decrease is first observed just after the acetone injection and then followed by an increase which saturates and stabilizes at a constant value. In order to clarify this unexpected behaviour, a detailed study of the sensors response versus the temperature and acetone injection flow has been carried out. The outcome of this investigation is that a competition between the current variations induced by both the sensor and gas flow temperature difference from one side and acetone dipolar moment from the other side can explain this transient. Our study highlights that AlGaN/GaN HEMTs-based sensors allow for very sensitive acetone detection at both room and high temperature. Nevertheless, care must be taken during the characterization and operation of such sensors especially at high operating temperature. On the other hand, high temperature operation helps to improve the sensor response suppress the memory effect.

Published
2020
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4. Detection sensor having a sensor cell with a high-electron mobility transistor and ring resonator(s)

Author

Aubry, Vincent, Ougazzaden, Abdallah, Salvestrini, Jean-Paul, Voss, Paul, Halfaya, Yacine, DASTILLUNG, NADEGE, Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), and Institut Lafayette

Subjects
[SPI]Engineering Sciences [physics], [SPI] Engineering Sciences [physics]
Abstract

A wireless sensor for detection or measurement of at least one specific component present in a gaseous or liquid mixture, the gas sensor including at least one sensor cell, having a high-electron-mobility transistor having a source and a drain with a gate intercalated between source and drain. The at least one sensor cell having a high-electron-mobility transistor is associated with at least one split-ring resonator with at least one respective slit and connected between, on the one hand, the drain and on the other hand, the gate or the source of the at least one sensor cell, the sensor detecting a change in the intensity or the frequency of resonance as a function of the presence and/or of the concentration of the at least one specific component in the gaseous or liquid mixture.

Published
2020

5. Investigation of the performance of HEMT based NO, NO2 and NH3 exhaust

Author

Halfaya, Yacine, Bishop, Chris, Soltani, A., Suresh, Sundaram, Aubry, Vincent, Voss, Paul L., Salvestrini, Jean-Paul, Ougazzaden, Abdallah, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), IMPACT N4S, and ANR-15-IDEX-0004,LUE,Isite LUE(2015)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2016
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