1. Structure and transport properties of titanium oxide (Ti2O, TiO1+δ, and Ti3O5) thin films.
- Author
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Fan, Yunjie, Zhang, Chao, Liu, Xiang, Lin, Yue, Gao, Guanyin, Ma, Chao, Yin, Yuewei, and Li, Xiaoguang
- Subjects
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THIN films , *TITANIUM dioxide films , *PULSED laser deposition , *HOPPING conduction , *ELECTRICAL resistivity - Abstract
Abstract Titanium oxides have partially filled or empty d orbital and are stable at various oxidation states with different structures and unique properties. Here, three kinds of titanium oxide thin films of hexagonal Ti 2 O metal, cubic TiO 1+ δ superconductor, and monoclinic γ-Ti 3 O 5 semiconductor, were successfully grown on α-Al 2 O 3 substrates by a pulsed laser deposition technique, through ablating a pure titanium target under different oxygen pressures. The electrical resistivities of these films increase with increasing oxygen content. The metallic behaviors of Ti bulk and Ti 2 O film can be described by the Bloch–Grüneisen formula, and the semiconducting behaviors of TiO 1 +δ films in normal state and γ-Ti 3 O 5 film obey the variable range hopping and the small polaron hopping conduction mechanisms, respectively. For titanium monoxide TiO 1+ δ (1.05 ≤ 1+ δ ≤ 1.17) films, increasing oxygen content is accompanied by an increase of disorder, a decrease of electron density of states at the Fermi level, and an enhancement of carrier localization, leading to a suppression of superconductivity. Graphical abstract Image 1 Highlights • Ti 2 O, TiO 1+ δ and Ti 3 O 5 thin films were grown by PLD using a pure titanium target. • Structures, compositions and transport properties can be tuned by oxygen contents. • The metallic hexagonal Ti 2 O single crystalline thin film was firstly prepared. [ABSTRACT FROM AUTHOR]
- Published
- 2019
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