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Abstract: An overview is presented of some of the recent results concerning the suitability of Czochralski silicon to High Energy Physics (HEP) radiation detectors. It has been shown that an elevated oxygen concentration within the bulk silicon of detectors offers increased radiation hardness to charged particle radiation. Silicon produced using the Czochralski growth method has an intrinsically higher concentration of oxygen than the standard silicon growth method, float zone, which is extensively used in HEP radiation detectors. The research reviewed in this paper aims to understand the microscopic and macroscopic behaviour of Czochralski and compares the performance to standard silicon radiation detectors. The majority of this work has been performed in the framework of the RD50 collaboration. [Copyright &y& Elsevier]

Abstract: Magnetic Czochralski (MCz) silicon has recently become a promising material for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A thorough study of 24GeV/c proton-irradiated p+-in-n Float Zone (FZ) , Diffusion Oxygenated Float Zone (DOFZ) and MCz silicon detectors has been conducted using the standard radiation damage characterization tools IV and CV, the Transient Current Technique (TCT) and annealing studies. The first systematic study on the effective trapping time in MCz silicon has been performed. The results show that the introduction rate for the traps responsible for the degradation of the effective trapping time for MCz material agrees with the introduction rate for FZ and DOFZ silicon. From the behaviour of the depletion voltage as a function of proton fluence and through the TCT technique, it has been shown that by a radiation fluence of 5×1014 p/cm2 the depletion voltage has passed its minimum value without type inversion. An annealing study compares the evolution of the effective trapping time, the effective space charge density and the current-related damage parameters for MCz and DOFZ silicon. [Copyright &y& Elsevier]