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Abstract Control of magnetic permeability through voltage in magnetoelectric materials promises to create novel voltage tunable inductors. Domain-level phase field modeling and computer simulation are employed to study magnetoelectric composites of Co-modified NiCuZn ferrite and PZT, where ferrite outperforms metallic magnetostrictive materials at high frequencies important for inductor applications. The simulations focus on the interplay between magnetocrystalline anisotropy and stress-induced anisotropy and reveal different regimes of permeability and tunability behaviors. It is shown that the permeability and its tunability can be significantly increased by reducing the intrinsic magnetocrystalline anisotropy through doping NiCuZn-ferrite with Co2+ to form solid solution (1- x)(Ni 0.6 Cu 0.2 Zn 0.2)Fe 2 O 4 - x CoFe 2 O 4 , and the optimal performance is achieved at vanishing magnetocrystalline anisotropy constant K 1 = 0 corresponding to composition x ∼0.02. The findings are confirmed by complementary experiments with good agreements. The effect of internal bias stress is further investigated, which is shown to shift the permeability regimes and thus provides an effective engineering technique to optimize the voltage tunable inductor performance. A tunability as high as ∼500% is obtained under the optimal condition, which is much higher than that obtained in conventional high-frequency voltage tunable inductors. Graphical abstract Image 1 [ABSTRACT FROM AUTHOR]

180° transverse domain walls (TDWs) in planar magnetic nanowires find important applications in advanced logic and memory devices. Controlling DW structure is important because it determines DW behaviors and is used to store digital information. This paper presents, using micromagnetic simulations, simple designs of nanowire unit that enables reliable generation of TDWs and effective control of their structures under rotating magnetic field. It is shown that a series of TDWs can be created, two per loading cycle, and external magnetic field can be programmed to control the TDW structures in terms of their polarity and chirality. These nanowire units and the corresponding magnetic field control schemes can be integrated into magnetic circuits to generate TDWs of controlled structures, facilitating the development of logic and memory devices based on DW functionalities. [ABSTRACT FROM AUTHOR]

The physical properties (dielectric, ferroelectric, piezoelectric, etc.) of complex perovskite ferroelectrics depend on the degree of order/disorder and the scale of the ordered domains. In this study, the electrocaloric (EC) properties of three representative complex perovskite ferroelectrics, Pb(Mg 1/3 Nb 2/3)O 3 –8PbTiO 3 (PMN-8PT), 1mol% Sm-doped Pb(Mg 1/3 Nb 2/3)O 3 –8PbTiO 3 (1S-PMN-8PT) and Pb(Sc 1/2 Ta 1/2)O 3 (PST) are evaluated. Multi-layer ceramic capacitors (MLCCs) with identical structural configurations were fabricated for these three compounds, and their EC properties were characterized by direct measurement using a thermocouple. The EC temperature change Δ T of PMN-8PT, 1S-PMN-8PT and PST MLCCs under 20 V μm−1 at room temperature were found to be 1.42 K, 1.54 K, and 3.10 K, respectively. X-ray diffraction and high-resolution transmission electron microscopy data suggests that the high EC performance of PST is related to the ordering of B-site cations (Sc3+ and Ta5+) with the ordering parameter S = 0.82 and a long coherence length of ∼100 nm, such that the sample transitioned from a relaxor ferroelectric to a normal ferroelectric. These results provide pathway towards design of high performance EC materials required for solid state refrigeration and air-conditioning technologies. Multi-layer ceramic capacitors for three representative complex perovskite ferroelectrics, Pb(Mg 1/3 Nb 2/3)O 3 –8PbTiO 3 (PMN-8PT), 1mol% Sm-doped Pb(Mg 1/3 Nb 2/3)O 3 –8PbTiO 3 (1S-PMN-8PT) and Pb(Sc 1/2 Ta 1/2)O 3 (PST), were fabricated. Their EC temperature change Δ T under 20 V μm−1 at room temperature were 1.42 K, 1.54 K, and 3.10 K, respectively. The high EC performance of PST is related to the long-range ordering of B-site cations (Sc3+ and Ta5+). [Display omitted] [ABSTRACT FROM AUTHOR]

Control of magnetic permeability through voltage promises to create novel electronic devices, such as voltage tunable inductors. The relationship between the structure and property of voltage tunable inductors comprising of magnetoelectric Metglas/PZT composites and the underlying domain-level mechanisms are investigated using theoretical analysis, computer simulation, and complementary experiments. A theoretical model is developed to analyze the roles of material anisotropy, inductor shape, and stress in controlling the Metglas permeability and its tunability. The analysis reveals key roles played by stress-induced anisotropy and the resultant ground magnetization state, and predicts two stress-dependent regimes of inductance tunability. The theory is validated using systematic experiments. The experimental results are used to determine the material and physical parameters. To further elucidate the underlying domain-level mechanisms responsible for controlling the behavior of voltage tunable inductor, phase field modeling is employed to simulate domain microstructures and magnetic permeability of Metglas/PZT composites under varying voltage. The computational results confirm the two regimes of inductance tunability and the controlling role of stress-induced anisotropy. The findings suggest engineering of internal bias stress as an effective means to optimize the inductance tunability of magnetoelectric Metglas/PZT composites. [ABSTRACT FROM AUTHOR]

We report a new type of racetrack memory based on current-controlled movement of magnetic vortices in magnetic nanowires with rectangular cross-section and weak perpendicular anisotropy. Data are stored through the core polarity of vortices and each vortex carries a data bit. Besides high density, non-volatility, fast data access, and low power as offered by domain wall racetrack memory, magnetic vortex racetrack memory has additional advantages of no need for constrictions to define data bits, changeable information density, adjustable current magnitude for data propagation, and versatile means of ultrafast vortex core switching. By using micromagnetic simulations, current-controlled motion of magnetic vortices in cobalt nanowire is demonstrated for racetrack memory applications. [ABSTRACT FROM AUTHOR]

An important role of domain wall pile-up in current-driven domain wall depinning in magnetic nanowires is revealed using micromagnetic simulations. It is found that the critical current for domain wall depinning can be substantially reduced and conveniently tuned by controlling domain wall number in the pile-up at pinning site, in analogy to dislocation pile-up responsible for Hall–Petch effect in mechanical strength. Domain wall pinning and depinning at an s-shape bend is considered, and the effects of curvature and current crowding in magnetic circuit on domain wall behaviors are discussed. [ABSTRACT FROM AUTHOR]