1. Photoluminescence properties of Pb2+ doped M2Mg(BO3)2 (M=Sr, Ba)
- Author
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Mergen, Ayhan and Pekgözlü, İlhan
- Subjects
- *
PHOTOLUMINESCENCE , *METAL ions , *DOPED semiconductors , *X-ray diffraction , *PHOSPHORS , *TEMPERATURE effect - Abstract
Abstract: Pure and Pb2+ doped M2Mg(BO3)2 (M=Sr, Ba) materials were synthesized at 900°C for 12h in air. The phases of the synthesized materials were determined using the powder XRD. The photoluminescence properties of the synthesized phosphors were investigated using a spectrofluorometer at room temperature. The emission and excitation bands of Sr2Mg(BO3)2: Pb2+ were observed at 330 and 260nm, respectively. And, the emission and excitation bands of Ba2Mg(BO3)2: Pb2+ were observed at 381 and 293nm, respectively. The dependence of the emission intensity on the Pb2+ concentration for the M2−x Pb x Mg(BO3)2 (M=Sr, Ba) was studied in detail. It was observed that the optimum concentrations of Pb2+ in Sr2Mg(BO3)2 and Ba2Mg(BO3)2 are 0.06 and 0.01mol, respectively. The Stokes shifts of Sr2Mg(BO3)2: Pb2+ and Ba2Mg(BO3)2: Pb2+ phosphors were calculated to be 8159 and 7883cm–1, respectively. The luminescence behavior of the Pb2+ ion in M2Mg(BO3)2 (M=Sr, Ba) is discussed. [Copyright &y& Elsevier]
- Published
- 2013
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