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Recent progress in high intensity ultrafast laser systems provides the opportunity to produce laser plasma x-ray sources exhibiting broad spectrum and high average x-ray flux that are well adapted to x-ray absorption measurements. In this paper, the development of a laser based x-ray absorption near edge structure (XANES) beamline exhibiting high repetition rate by using the Advanced Laser Light Source (ALLS) facility 100 Hz laser system (100 mJ, 35 fs at 800 nm) is presented. This system is based on a broadband tantalum solid target soft x-ray source and a grazing incidence grating spectrometer in the 1–5 nm wavelength range. To demonstrate the high potential of this laser based XANES technique in condensed matter physics, material science, or biology, measurements realized with several samples are presented: VO2 vanadium L edge, Si3N4 nitrogen K edge, and BPDA/PPD polyimide carbon K edge. The characteristics of this laser based beamline are discussed in terms of brightness, signal to noise ratio, and compared to conventional synchrotron broadband x-ray sources which allow achieving similar measurements. Apart from the very compact size and the relative low cost, the main advantages of such a laser based soft x-ray source are the picosecond pulse duration and the perfect synchronization between this x-ray probe and a laser pulse excitation which open the way to the realization of time resolved x-ray absorption measurements with picosecond range time resolution to study the dynamics of ultrafast processes and phase transition. [ABSTRACT FROM AUTHOR]

Single-phase vanadium dioxide (VO2) thin films have been grown on Si3N4/Si substrates by means of a well-controlled magnetron sputtering process. The deposited VO2 films were found to exhibit a semiconductor-to-metal transition (SMT) at ∼69 °C with a resistivity change as high as 3.2 decades. A direct and clear-cut correlation is established between the SMT characteristics (both amplitude and abruptness of the transition) of the VO2 films and their crystallite size. [ABSTRACT FROM AUTHOR]

We show through experiments that a transition from laser wakefield acceleration (LWFA) regime to a plasma wakefield acceleration (PWFA) regime can drive electrons up to energies close to the GeV level. Initially, the acceleration mechanism is dominated by the bubble created by the laser in the nonlinear regime of LWFA, leading to an injection of a large number of electrons. After propagation beyond the depletion length, leading to a depletion of the laser pulse, whose transverse ponderomotive force is not able to sustain the bubble anymore, the high energy dense bunch of electrons propagating inside bubble will drive its own wakefield by a PWFA regime. This wakefield will be able to trap and accelerate a population of electrons up to the GeV level during this second stage. Three dimensional particle-in-cell simulations support this analysis and confirm the scenario. [ABSTRACT FROM AUTHOR]