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Context and results : In this paper, the crystal structure, electronic, optical, and mechanical properties of SrVO3 have been systematically studied by first-principles calculation. The results show that the calculated lattice parameters are in good agreement with the experimental values of X-ray diffraction. The density of states is described in detail in this paper. By analyzing the crystal structure and electronic properties of SrVO3, the magnetic properties of SrVO3 are obtained from the one unpaired electrons of V and the exchange interaction between two V ions. At the same time, a detailed analysis of the optical properties of SrVO3 was conducted, and it was found that it is transparent in the visible light range. Finally, the mechanical properties of SrVO3 are calculated, which can provide some references for future research. Computational method: In this paper, a first-principles method based on density functional theory (DFT) is reported for PBE-GGA analysis using the plane wave-pseudo potential method in a quantum concentrate packet, U value of 7 eV to V-d and a U value of 2 eV to O-p, Grimme correction by DFT-D method. The k points in the Brillouin region are set to 4 × 4 × 4. The energy convergence criterion for self-consistent field calculation is set at 5.0 × 10−6 eV/atom, and the cutoff energy is 1170 eV. In this paper, the force acting on each atom is not more than 0.01 eV/Å, the maximum stress is not more than 0.02GPa, and the maximum atomic displacement is 5 × 10−4 Å. [ABSTRACT FROM AUTHOR]

Context and results : In this paper, the crystal structure, electronic, optical, and mechanical properties of SrVO3 have been systematically studied by first-principles calculation. The results show that the calculated lattice parameters are in good agreement with the experimental values of X-ray diffraction. The density of states is described in detail in this paper. By analyzing the crystal structure and electronic properties of SrVO3, the magnetic properties of SrVO3 are obtained from the one unpaired electrons of V and the exchange interaction between two V ions. At the same time, a detailed analysis of the optical properties of SrVO3 was conducted, and it was found that it is transparent in the visible light range. Finally, the mechanical properties of SrVO3 are calculated, which can provide some references for future research. Computational method: In this paper, a first-principles method based on density functional theory (DFT) is reported for PBE-GGA analysis using the plane wave-pseudo potential method in a quantum concentrate packet, U value of 7 eV to V-d and a U value of 2 eV to O-p, Grimme correction by DFT-D method. The k points in the Brillouin region are set to 4 × 4 × 4. The energy convergence criterion for self-consistent field calculation is set at 5.0 × 10−6 eV/atom, and the cutoff energy is 1170 eV. In this paper, the force acting on each atom is not more than 0.01 eV/Å, the maximum stress is not more than 0.02GPa, and the maximum atomic displacement is 5 × 10−4 Å. [ABSTRACT FROM AUTHOR]

Context: The effect of X (X = O, Se, N, P, F, Cl) doping on the adsorption of Zn atoms by WS2 was investigated based on first principles. The electronic structure and optical properties of the adsorbed system after atomic doping were calculated. It is found that the Zn atom adsorbed on the W top (Tw) site has the most stable structure. When an S atom is replaced with an X atom based on the adsorption system, where the adsorption energy decreases after doping of O, P, F, and Cl atoms compared to the undoped system, it means that each system is more stable after doping of these atoms; charge transfer shows that the adsorption system after P-atom doping the system around the Zn atom loses electrons while S-atom gains electrons, which indicates that P-atom doping is favorable for the adsorption of Zn by WS2, N, P-atom is introduced as p-type doping and F, Cl-atom is introduced undoped by n-type doping, and the band gap of the doped system is less than that of the undoped one. With the introduction of different dopant atoms, certain impurity energy levels are introduced into the adsorption system. The prohibited bandwidth around the Fermi energy level reduces the density of states, causing the doped system's density of states to shift to lower energies, among which the shifts of N, P, F, and Cl are more pronounced. The P-doped adsorption system shows a new peak near the energy of − 11 eV. In addition, the study of optical properties showed that the peak reflections of both doped and non-doped systems adsorbing Zn atoms appeared in the ultraviolet region; the absorbance coefficient of the doped system is moved in the lower energy direction and red-shifted after atom doping; in addition, the absorption coefficients and reflectance of the P, Se doped systems are enhanced in the wavelength range of 200–300 nm compared with that before doping, the dielectric function and CBM and VBM positions were also calculated further indicating the potential of Se-doped systems in improving photocatalytic efficiency. Methods: In this paper, the structure optimization of X (X = O, Se, N, P, F, Cl) doping on WS2 adsorbed Zn atom model is performed based on the CASTEP module in Materials-Studio software under the first principles using GGA and PBE generalized function. The corresponding binding energies, bond lengths, bond angles, charge densities, energy band structures, densities of states, and optical properties were also analyzed. The Monkhorst–Pack particular K-point sampling method is used in the calculations; the K-point grid is 6 × 6 × 1, and the cutoff energy for the plane wave expansion is 500 eV. After geometric optimization, the iterative accuracy converges to a value of less than 1 × 10−5 eV/atom for the total energy of each atom and less than 0.03 eV/Å for all atomic forces. The thickness of the vacuum layer was set to 20 Å to avoid the effect of interlayer interaction forces. In this paper, 27 atoms were used to form a 3 × 3 × 1 supercellular tungsten disulfide system consisting of 18 S atoms and 9 W atoms. [ABSTRACT FROM AUTHOR]

Context: To lessen the impact of the dangerous metal Cr, this paper applies the first principles to investigate the adsorption behavior and photoelectric properties of GaS on Cr. The effects of doped GaS on Cr adsorption behavior are investigated with four GaS systems, which are pure, boron (B)-doped, nitrogen (N)-doped, and oxygen (O)-doped, in order to maximize the characteristics of GaS for use in novel sectors, to obtain understanding of the impact of doping on the electronic structure and optical properties of GaS adsorption of Cr, as well as to promote the development of the material. Four GaS adsorbed Cr systems, pure, B-doped, N-doped, and O-doped, are optimized, and the optimized results show that the stable adsorption position of Cr on both pure and doped GaS is the top position of Ga atoms, whereas doped elements B, N, and O can promote the adsorption of Cr on GaS, and the order of the strength of this promotion is B > N > O. Method: In this paper, molecular simulation calculations and analyses using the CASTEP module in the software Materials Studio are performed to simulate the structure optimization of GaS-adsorbed Cr materials doped with B, N, and O atoms by using the generalized gradient approximation (GGA) plane-wave pseudopotential approach [1] and the Perdew-Burke-Ernzerhof (PBE) generalized function [2]. From the convergence test, it is reasonable to set the K-point network to 4 × 4 × 1 and the truncation energy to 500 eV [3]. In this paper, a 3 × 3 × 1 supercell structure with 18 S atoms and 18 Ga atoms is selected. The convergence value of the iterative accuracy is 1.0e − 5 eV/atom, and all the atomic forces are less than 0.02 eV/Å. A vacuum layer of 16 Å is also set in the C direction to avoid interlayer interactions of GaS. First, we optimize the geometry of the model and then analyze the nature of the adsorption energy and electronic structure corresponding to the model. [ABSTRACT FROM AUTHOR]

Context: This study explores the impact of deformation on the electrical and optical characteristics of monolayer cadmium telluride (MoTe2) with vacancies, using the foundational principles of density functional theory. It was discovered that both strain and imperfections alter the electrical characteristics of monolayer MoTe2. Under VTe-MoTe2, a direct-to-indirect band-gap transition occurs. In DTe-MoTe2, the band-gap value reduces dramatically, the conduction band changes downward, and the carrier concentration rises. The DVTe-induced band gap state is closer to the Fermi energy level than the VTe-induced band gap state. In this paper, DTe-MoTe2 is chosen for tensile deformation. The results show that the band-gap value tends to decrease by increasing tensile deformation. When the stretching value reaches 10%, the lower bound of the conduction band and the top of the valence band overlap, and the system is converted from a semiconductor to a metal. Considering the density of states, the missing state MoTe2 is mainly contributed by the participation of Te-s, Te-p, and Mo-d orbitals. In terms of optical qualities, the absorption and reflection peaks are red-shifted and blue-shifted, respectively. It is hoped that these effects on the optoelectronic properties will be widely applied. Methods: In this study, we utilize the generalized gradient approximation plane-wave pseudopotential method, incorporating Perdew-Burke Ernzerhof (PBE) generalized functions and following the fundamental principles of the density functional theory framework. A 3 × 3 × 1 supercell was constructed as an undoped model based on a MoTe2 monolayer, which consists of 9 Mo atoms and 18 Te atoms. The vacuum flat plate was set to 15 Å along the z-direction to avoid interactions between the monolayers. For electronic structure calculations, the energy cutoff was set to 450 eV. Each model's computational process and structural optimization were carried out using the Monkhorst–Pack specialized K-point sampling approach. Crystal optimization computations used a 3 × 3 × 1 Monkhorst–Pack K-point grid for molybdenum ditelluride monolayers and a 9 × 9 × 1 K-point grid for electronic system analysis, analyzing state density and optical characteristics, respectively. For the structural optimization, the convergence requirements for maximum force, maximum atom displacement, maximum stress, and energy change were defined at 0.03 eV/Å, 0.001 Å, 0.05 Gpa, and 1.0 × 10−5 eV/atom, respectively. [ABSTRACT FROM AUTHOR]

Context: The electronic properties and optical properties of Cr-doped monolayer WS2 under uniaxial compressive deformation have been investigated based on density functional theory. In terms of electronic structure properties, both intrinsic and doped system bandgaps decrease with the increase of compression deformation, and the values of the bandgap under the same compression deformation after Cr doping are reduced compared with the corresponding intrinsic states. When the compressive deformation reaches 10%, both the intrinsic and doped system band gaps are close to zero. New electronic states and impurity energy levels appear in the WS2 system when doped with Cr atoms. For the optical properties, the calculation and analysis of the dielectric function under each deformation regime of monolayer WS2 show that the compression deformation affects the dielectric function, and when the compression deformation is 10%, the un-doped and Cr-doped regimes show a decrease in ε1(ω) compared to the compression deformation of 8%. For each deformation system, the peak reflections occur in the ultraviolet region. Near the position where the second peak of the absorption spectrum appears, it can be seen that the ability of each system to absorb light gradually decreases with the increase of the amount of deformation and appears to be red-shifted to varying degrees. Methods: This study follows the initial principles of the density functional theory framework and is based on the CASTEP module of Materials-Studio software GGA and PBE generalizations are used to perform computations such as geometry optimization of the model. We have calculated the energy band structure of monolayer WS2 with intrinsic and compressive deformations of 2% and 4% using PBE and HSE06, respectively. The band gap values calculated using PBE are 1.802 eV, 1.663 eV, and 1.353 eV, respectively, and the band gap values calculated with HSE06 are 2.267 eV, 2.034 eV, 1.751 eV. The results show that the bandgap values calculated by HSE06 are significantly higher than those calculated by PBE, but the bandgap variations calculated by the two methods have the same trend, and the shape characteristics of the energy band structure are also the same. However, it is worth noting that the computation time required for the HSE06 calculation is much longer than that of the PBE, which is far beyond the capability of our computer hardware, and the purpose of this paper is to investigate the change rule of the effect of deformation on the bandgap value, so to save the computational resources, the next calculations are all calculated using the PBE. The Monkhorst–Pack special K-point sampling method is used in the calculations. The cutoff energy for the plane wave expansion is 400 eV, and the K-point grid is assumed to be 5 × 5 × 1. Following geometric optimization, the iterative precision converges to a value of less than 0.03 eV/Å for all atomic forces and at least 1 × 10−5 eV/atom for the total energy of each atom. The vacuum layer's thickness was selected at 20 Å to mitigate the impact of the interlayer contact force. [ABSTRACT FROM AUTHOR]

Context: The electronic properties and optical properties of Cr-doped monolayer WS2 under uniaxial compressive deformation have been investigated based on density functional theory. In terms of electronic structure properties, both intrinsic and doped system bandgaps decrease with the increase of compression deformation, and the values of the bandgap under the same compression deformation after Cr doping are reduced compared with the corresponding intrinsic states. When the compressive deformation reaches 10%, both the intrinsic and doped system band gaps are close to zero. New electronic states and impurity energy levels appear in the WS2 system when doped with Cr atoms. For the optical properties, the calculation and analysis of the dielectric function under each deformation regime of monolayer WS2 show that the compression deformation affects the dielectric function, and when the compression deformation is 10%, the un-doped and Cr-doped regimes show a decrease in ε1(ω) compared to the compression deformation of 8%. For each deformation system, the peak reflections occur in the ultraviolet region. Near the position where the second peak of the absorption spectrum appears, it can be seen that the ability of each system to absorb light gradually decreases with the increase of the amount of deformation and appears to be red-shifted to varying degrees. Methods: This study follows the initial principles of the density functional theory framework and is based on the CASTEP module of Materials-Studio software GGA and PBE generalizations are used to perform computations such as geometry optimization of the model. We have calculated the energy band structure of monolayer WS2 with intrinsic and compressive deformations of 2% and 4% using PBE and HSE06, respectively. The band gap values calculated using PBE are 1.802 eV, 1.663 eV, and 1.353 eV, respectively, and the band gap values calculated with HSE06 are 2.267 eV, 2.034 eV, 1.751 eV. The results show that the bandgap values calculated by HSE06 are significantly higher than those calculated by PBE, but the bandgap variations calculated by the two methods have the same trend, and the shape characteristics of the energy band structure are also the same. However, it is worth noting that the computation time required for the HSE06 calculation is much longer than that of the PBE, which is far beyond the capability of our computer hardware, and the purpose of this paper is to investigate the change rule of the effect of deformation on the bandgap value, so to save the computational resources, the next calculations are all calculated using the PBE. The Monkhorst–Pack special K-point sampling method is used in the calculations. The cutoff energy for the plane wave expansion is 400 eV, and the K-point grid is assumed to be 5 × 5 × 1. Following geometric optimization, the iterative precision converges to a value of less than 0.03 eV/Å for all atomic forces and at least 1 × 10−5 eV/atom for the total energy of each atom. The vacuum layer's thickness was selected at 20 Å to mitigate the impact of the interlayer contact force. [ABSTRACT FROM AUTHOR]

Purposes: The paper aims to investigative the cacuses and impacts of In- and Vacancy-doped to 6H-SiC, expecting that improving optical properties of materials. Design-Using the first-principles calculations, we discuss the electronic structure and optical properties of different doped 6H-SiC systems. Findings: The results show that In-doped 6H-SiC becomes a direct bandgap p-type semiconductor and the energy bandgap is reduced from the intrinsic 2.059 to 1.515 eV. We demonstrate the stability of the systems through the formation energy analysis, meanwhile identify their physical origins and discuss applications of all structures in electronic devices within optical analysis. Find the energy beginning values of the VSi-doped and VC-doped systems' optical absorption spectrums and extend to 0.4 2 eV and 0.11 eV respectively compared with the original 3.23 eV. In the visible light region, the reflectivity images of the VC/VSi and (In, VSi)-codoped systems rise obviously. Conclusions: The optical properties of all doping systems were analyzed to be improved compared with the intrinsic, all above mentioned provide a theoretical basis for the fabrication of spintronic and optical devices. [ABSTRACT FROM AUTHOR]

We present the evolution of the electronic structure of CrSBr from its antiferromagnetic ground state to the paramagnetic phase above TN = 132 K, in both experiment and theory. Low-temperature angle-resolved photoemission spectroscopy (ARPES) results are obtained using a novel method to overcome sample charging issues, revealing quasi-2D valence bands in the ground state. The results are very well reproduced by our QSG W ̂ calculations, which further identify certain bands at the X points to be exchange-split pairs of states with mainly Br and S character. By tracing band positions as a function of temperature, we show the splitting disappears above TN. The energy splitting is interpreted as an effective exchange splitting in individual layers in which the Cr moments all align, within the so-called A-type antiferromagnetic arrangement. Our results lay firm foundations for the interpretation of the many other intriguing physical and optical properties of CrSBr. [ABSTRACT FROM AUTHOR]

Density Functional Theory is employed to investigate how specific rare earth (RE) dopants (Pr, Y, Dy) affect the electronic, magnetic, and optical characteristics of Co0.5Ni0.5Fe2O4 (CN) spinel ferrites. The impact of RE atoms, which replace Fe ions in the supercell, is elucidated by analyzing the spin-resolved density of states, magnetic moment, and optical parameters. The findings demonstrate that both single and collective RE doping play a vital role in manipulating the key properties of these materials. Notably, we reveal that incorporating RE dopants into CN structures leads to a reduction in the energy band gap. Additionally, this work underscores substantial spin-dependent behavior and provides valuable insights into optical properties, suggesting that RE-doped CNs hold significant potential in the fields of spintronics and optoelectronics. [ABSTRACT FROM AUTHOR]

First principles calculations of the structural, electronic and optical properties of GaSb, InSb and their ternary Ga 1 - x In x Sb alloys (x = 0.25, 0.50 and 0.75) have been performed using the full-potential linear muffin-tin orbital (FP-LAPW) method within density functional theory (DFT). The generalized gradient approximation and modified Becke and Janson functional with local density approximation (mBJ–LDA) are utilized for the treatment of exchange and correlation potentials. The results show the calculated lattice constants increase linearity with increasing the In concentration. The electronic band structure indicates that these alloys are direct band gap semiconductors for all the values of x and the band gap decreases as x increases from x = 0 to x = 1. The results also show that the there is a non-linear dependence of the band gap on composition x in Ga 1 - x In x Sb alloys. Regarding optical properties, the real and imaginary parts of the dielectric function have been calculated. The results show that the static dielectric constant increases with increase in concentration of In, consistent with reduction in energy band gap. The onset point and major peaks in the imaginary parts of the dielectric function spectra are identified for the Ga 1 - x In x Sb alloys and shown that they are related to the corresponding band gap values. The results also show that for energy values higher than ≅ 4 eV, the electromagnetic wave transition through Ga 1 - x In x Sb alloys is nearly zero. [ABSTRACT FROM AUTHOR]

Van der Waals (vdW) heterostructures provide an effective strategy for exploring and expanding the potential applications of two-dimensional materials. In this study, we employ first-principles density functional theory (DFT) to investigate the geometric, electronic, and optical properties of MoGe2N4/AlN and MoSiGeN4/AlN vdW heterostructures. The stable MoGe2N4/AlN heterostructure exhibits an indirect band gap semiconductor with a type-I band gap arrangement, making it suitable for optoelectronic devices. Conversely, the stable MoSiGeN4/AlN heterostructure demonstrates various band gap arrangements depending on stacking modes, rendering it suitable for photocatalysis applications. Additionally, we analyze the effects of mechanical strain and vertical electric field on the electronic properties of these heterostructures. Our results indicate that both mechanical strain and vertical electric field can adjust the band gap. Notably, application of an electric field or mechanical strain leads to the transformation of the MoGe2N4/AlN heterostructure from a type-I to a type-II band alignment and from an indirect to a direct band transfer, while MoSiGeN4/AlN can transition from a type-II to a type-I band alignment. Type-II band alignment is considered a feasible scheme for photocatalysis, photocells, and photovoltaics. The discovery of these characteristics suggests that MoGe2N4/AlN and MoSiGeN4/AlN vdW heterostructures, despite their high lattice mismatch, hold promise as tunable optoelectronic materials with excellent performance in optoelectronic devices and photocatalysis. [ABSTRACT FROM AUTHOR]

Using first principles calculations based on the density functional theory and the structural, electronic, and optical properties of the substitution of K elements by Li+, Na+, Mg2+, and Ca2+ in KH2PO4 (KDP) crystals are investigated in depth. This study provides insight into the structural properties of crystals, with particular emphasis on internal chemical bonding effects. It further discusses the impact of H and O defects on the bandgap and optical properties of KDP crystals. Detailed analysis of structural characteristics and comprehensive examination of the effects of chemical bonds contribute to a deeper understanding of the effects of defects on the lattice and electronic structure, revealing potential alterations and their underlying mechanisms. Our investigation focuses on the regulatory role of different defects on the bandgap and optical properties. These comprehensive analyses provide a more thorough understanding of the impact of defects on the properties of KDP crystals, establishing an essential research foundation for further exploration of nonlinear optics crystal potential applications. [ABSTRACT FROM AUTHOR]

In this study, we comprehensively explored the electronic structure and optical properties of Ni-doped Bi4O5Br2 through first-principles computational calculations. By calculating its electronic structure and band characteristics, we investigated the impact of Ni doping on the photocatalytic performance of Bi4O5Br2. The computational results indicated that Ni doping significantly altered the band structure of Bi4O5Br2, leading to a reduction in the band gap width. The band gap for undoped Bi4O5Br2 was 2.151 eV, whereas the Ni-doped system exhibited a smaller band gap, directly indicating its enhanced visible light absorption capacity and facilitating the effective separation of photo-generated electron–hole pairs. Through analysis of 2D charge density maps, we observed changes in chemical bonding induced by Ni doping. The shortening of Ni-O bonds suggested increased bond strength, consistent with the observed reduction in cell volume. These findings provide a theoretical foundation for understanding the mechanisms behind the enhanced photocatalytic hydrogen production performance in Ni-doped Bi4O5Br2, offering valuable insights for the design and optimization of highly efficient photocatalytic materials. [ABSTRACT FROM AUTHOR]