1. Constructing Morphotropic Phase Boundary in Epitaxial BiFeO3 on SrTiO3 by Suppression of Strain Relaxation.
- Author
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Cheng, Yue‐Yu‐Shan, Hu, Yuxian, Murashita, Taichi, Song, Yu, Wang, Hongliang, Okamoto, Kazuki, Liu, Lisha, Liu, Yi‐Xuan, Zhang, Xin, Huang, Houbing, Li, Jing‐Feng, and Funakubo, Hiroshi
- Subjects
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MORPHOTROPIC phase boundaries , *CRITICAL temperature , *SUBSTRATES (Materials science) , *EPITAXY , *HIGH temperatures - Abstract
The strain‐driven morphotropic boundary in BiFeO3 can enhance the piezoelectric properties. However, the tetragonal phase has generally been observed in BiFeO3 films grown on substrates with intense compressive strain (more than −4.5%) within a limited thickness range (<300 nm) due to significant thickness‐dependent strain relaxation during film growth at high deposition temperatures. This work proposes suppressing thickness‐dependent strain relaxation by decreasing growth temperature. Utilizing a hydrothermal method, the growth temperature of epitaxial BiFeO3 films decreases to 200 °C. As a result, the tetragonal phase is observed in 600‐nm‐thick BiFeO3 film on (001) SrTiO3 substrates (strain equals only −1.5%), accompanied by the monoclinic phase. This SrTiO3‐available morphotropic phase boundary significantly enhances the piezoelectric response (d33,f′=110pmV−1)$ {({d}^{\prime}_{\rm 33,f} = 110\, {\rm pm\, V}^{-1})} $ in epitaxial BiFeO3 film. Ex situ and in situ measurements, theoretical calculations, and simulation confirm that the SrTiO3‐available morphotropic phase boundary originates from the suppressed strain relaxation. Furthermore, a critical temperature (400 °C), below which the tetragonal phase can be maintained, is identified to offer an applicable strategy for extending strain‐driven morphotropic phase boundary for high‐performance piezoelectric films. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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