1. Indium segregation in AlInN/AlN/GaN heterostructures.
- Author
-
Minj, A., Cavalcoli, D., and Cavallini, A.
- Subjects
HETEROSTRUCTURES ,INDIUM ,ATOMIC force microscopy ,DIFFUSION ,THIN films ,PHOTONICS ,METAL organic chemical vapor deposition - Abstract
AlInN/AlN/GaN heterostructures were characterized by atomic force microscopy. V-defects and channels were observed. In phase-contrast mode, these features were found related to inhomogeneities associated with In-segregation (and/or In-diffusion) and Al-rich surface reconstruction. The electrical characterization via conductive atomic force microscopy showed enhanced conductivity regions related to In-rich traces within channels and V-defects. [ABSTRACT FROM AUTHOR]
- Published
- 2010
- Full Text
- View/download PDF