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We present a detailed simulation study on plasmonic-organic hybrid electro-optic modulators based on coupled symmetric or asymmetric plasmonic slots. An electro-optic polymer is exploited as an active material, and the device is compatible with a silicon photonics platform. The proposed device operates at 1550 nm wavelength, typical of data center or long-haul telecommunication systems. The device performance in terms of area, plasmonic losses, optical bandwidth, intrinsic modulation bandwidth and energy dissipation are comparable to already proposed Mach-Zehnder solutions, but with potentially better extinction ratio, coupling losses due to photonic-plasmonic transitions, and flexibility in exploiting, without any performance penalty, asymmetric slots to shift the ON and OFF states bias. Finally, the bias dependence of the modulation chirp is investigated, comparing through and cross-coupling configurations. [ABSTRACT FROM AUTHOR]

Herein, an overview on the physics‐based and system‐oriented modeling of organic electro‐optic Mach–Zehnder modulators for optical communication systems is presented. State‐of‐the‐art solutions in electro‐optic organic materials and modulator designs are reviewed, with particular stress on silicon organic hybrid (SOH) and plasmonic organic hybrid (POH) solutions. Then, the physics‐based simulation of concentrated and traveling‐wave modulators is discussed both through 3D optical simulations and a combination of 2D and 3D models, where the modulator is partitioned into convenient subdomains. Neural network behavioral models are finally discussed and case studies are proposed on the physics‐based and system‐level simulation of SOH and POH Mach–Zehnder modulators. [ABSTRACT FROM AUTHOR]

Defects can significantly modify the electro-optical characteristics of InGaN light-emitting diodes (LEDs); however, modeling the impact of defects on the electrical characteristics of LEDs is not straightforward. In this paper, we present an extensive investigation and modeling of the impact of defects on the electrical characteristics of InGaN-based LEDs, as a function of the thickness of the quantum well (QW). First, we demonstrate that the density of defects in the active region of III-N LEDs scales with increasing thickness of the InGaN QW. Since device layers with high indium content tend to incorporate more defects, we ascribed this experimental evidence to the increased volume of defects-rich InGaN associated to thicker InGaN layers. Second, we demonstrate that the current–voltage characteristics of the devices are significantly influenced by the presence of defects, especially in the sub turn-on region. Specifically, we show that the electrical characteristics can be effectively modeled in a wide current range (from pA to mA), by considering the existence of trap-assisted tunneling processes. A good correspondence is obtained between the experimental and simulated electrical characteristics (I–V), by using—in the simulation—the actual defect concentrations/activation energies extracted from steady-state photocapacitance, instead of generic fitting parameters. [ABSTRACT FROM AUTHOR]