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Context and results : In this paper, the crystal structure, electronic, optical, and mechanical properties of SrVO3 have been systematically studied by first-principles calculation. The results show that the calculated lattice parameters are in good agreement with the experimental values of X-ray diffraction. The density of states is described in detail in this paper. By analyzing the crystal structure and electronic properties of SrVO3, the magnetic properties of SrVO3 are obtained from the one unpaired electrons of V and the exchange interaction between two V ions. At the same time, a detailed analysis of the optical properties of SrVO3 was conducted, and it was found that it is transparent in the visible light range. Finally, the mechanical properties of SrVO3 are calculated, which can provide some references for future research. Computational method: In this paper, a first-principles method based on density functional theory (DFT) is reported for PBE-GGA analysis using the plane wave-pseudo potential method in a quantum concentrate packet, U value of 7 eV to V-d and a U value of 2 eV to O-p, Grimme correction by DFT-D method. The k points in the Brillouin region are set to 4 × 4 × 4. The energy convergence criterion for self-consistent field calculation is set at 5.0 × 10−6 eV/atom, and the cutoff energy is 1170 eV. In this paper, the force acting on each atom is not more than 0.01 eV/Å, the maximum stress is not more than 0.02GPa, and the maximum atomic displacement is 5 × 10−4 Å. [ABSTRACT FROM AUTHOR]

Context and results : In this paper, the crystal structure, electronic, optical, and mechanical properties of SrVO3 have been systematically studied by first-principles calculation. The results show that the calculated lattice parameters are in good agreement with the experimental values of X-ray diffraction. The density of states is described in detail in this paper. By analyzing the crystal structure and electronic properties of SrVO3, the magnetic properties of SrVO3 are obtained from the one unpaired electrons of V and the exchange interaction between two V ions. At the same time, a detailed analysis of the optical properties of SrVO3 was conducted, and it was found that it is transparent in the visible light range. Finally, the mechanical properties of SrVO3 are calculated, which can provide some references for future research. Computational method: In this paper, a first-principles method based on density functional theory (DFT) is reported for PBE-GGA analysis using the plane wave-pseudo potential method in a quantum concentrate packet, U value of 7 eV to V-d and a U value of 2 eV to O-p, Grimme correction by DFT-D method. The k points in the Brillouin region are set to 4 × 4 × 4. The energy convergence criterion for self-consistent field calculation is set at 5.0 × 10−6 eV/atom, and the cutoff energy is 1170 eV. In this paper, the force acting on each atom is not more than 0.01 eV/Å, the maximum stress is not more than 0.02GPa, and the maximum atomic displacement is 5 × 10−4 Å. [ABSTRACT FROM AUTHOR]

In this paper, the electronic structures of rare earth (Nd, Er)-doped MgO were investigated using density functional theory (DFT), with Hubbard on-site corrections (Ueff) applied to rare earth elements. Li was considered a co-dopant. Defect complexes were involved, instead of a single dopant atom, in the supercell. The splitting and distribution of the 4f ground states of Nd and Er dopants in the band gap changed by co-doping Li. The calculation results provide insights into the influences of Li on the optical properties of rare-earth-doped MgO. [ABSTRACT FROM AUTHOR]

The complex theoretical analysis of the density of states, band structures, and Fermi surfaces, based on predictions of the density functional theory methods, unveils the unique electronic properties of the LaZn1−xBi2 system. In this paper, the Zn vacancies (for x = 0.5 ) were modeled using a modified unit cell of lower symmetry than that for a fully stoichiometric one (for x = 0 ). The existence of several Dirac-like features in the electronic band structures was found. Some of them were found to be intimately associated with the nonsymmorphic symmetry of the system, and these were investigated in detail. The calculated Fermi surface shapes, as well as the Fermi velocity values (up to ∼1.2 × 10 6 m/s), are in good agreement with other analogous square-net Dirac semimetals. The combination of charge-carrier uncompensation, relatively small band splitting, and the tolerance factor for square-net semimetals t ≤ 0.95 for LaZn0.5Bi2, constitutes a very promising indicator of the topological features of this system, warranting further experimental studies. [ABSTRACT FROM AUTHOR]

Vacancy engineering has repeatedly proven to be a powerful strategy for manipulating material properties. The important influence of selenium vacancies (V Se) on the physicochemical properties of rhenium diselenide (ReSe 2), exciting applications can be opened in areas such as catalysis and photoelectric devices. However, the effects of V Se on electronic structure, carrier lifetime, and electrochemical activity of ReSe 2 have remained inadequately explored and poorly elucidated. Herein, hydrothermal controlled growth of ReSe 2 with vacancy (V Se -ReSe 2) is used by different synthesis strategies, revealing its growth mechanism. An ethanol-assisted hydrothermal method based on carbon paper was used to adjust the V Se concentration by changing the time parameters. Mediated excitonic effects in the transient absorption (TA) spectroscopy and photoluminescence response of ReSe 2 regulated by V Se were characterized. The defect level (DL) leads V Se -ReSe 2 to produce a unique defect emission peak, and the V Se -mediated exciton dynamics problem was discussed. Moreover, the TA result of V Se -ReSe 2 shows that high V Se concentration prolongs carrier lifetime and causes high carrier separation efficiency and electron utilization. The electrocatalytic hydrogen evolution reaction of ReSe 2 catalyst revealed the ability of V Se concentration to regulate the electrochemical activity, which provides ideas for vacancy management catalyst performance. The presence of DL and the reduction of band gap are indicated by density functional theory, which confirms the regulatory effect of V Se concentration on the electronic structure of ReSe 2. This work proffers an optimal solution strategy for hydrothermal preparation of ReSe 2 , which demonstrates the feasibility of regulating electrochemical activity by vacancy engineering, and the excellent performance of V Se -ReSe 2 makes it show great potential in many fields such as water cracking and physical devices. [Display omitted] • A regulation strategy for the successful construction of V Se rich ReSe 2 nanoflowers was developed. • DFT investigated the reduction of the band gap and orbital contribution of ReSe 2 regulated by V Se. • Mediated excitonic effects in the TA and PL response of ReSe 2 regulated by V Se were analyzed. • The effectively regulate the HER activity of V Se -ReSe 2 were analyzed. Vacancy engineering is powerful for manipulating material properties. Selenium vacancies (V Se) exert significantly impact on the physicochemical properties of rhenium diselenide (ReSe 2), triggering applications in catalysis and photoelectric devices. However, the effects on electronic structure, carrier lifetime, and electrochemical activity are inadequately explored and poorly elucidated. Herein, hydrothermal-controlled growth of ReSe 2 with V Se is synthesized by different strategies. The ethanol-assisted hydrothermal method can adjust V Se concentration of ReSe 2 on carbon paper by time parameters. Mediated excitonic effects were characterized in the transient absorption spectroscopy and photoluminescence of V Se -regulated ReSe 2. The defect level produces unique defect emission peak, and the V Se -mediated exciton dynamics problem was discussed. The transient absorption result shows that high V Se concentration can optimize carrier lifetime, carrier separation efficiency, and electron utilization. The electrocatalytic hydrogen evolution reaction of ReSe 2 catalyst revealed the electrochemical activity regulation by V Se concentration, which provides ideas for enhancing catalyst performance. Density functional theory result confirms the role of selenium vacancies in the regulation of the electronic structure of ReSe 2. This work proffers an optimal solution strategy for hydrothermal preparation of ReSe 2 , and demonstrates the feasibility of regulating electrochemical activity by vacancy engineering. The excellent performance is beneficial for water cracking and physical devices. [ABSTRACT FROM AUTHOR]

Context: 1,3,5-triamino-2,4,6-trinitrobenzene (TATB) is a typical insensitive energetic material. It can be used in explosive formulations, such as PBX-9502 and LX-17-0. TATB is an intriguing and unusual explosive for another reason: it crystallizes into a wide array of planar hydrogen bonds, forming a graphite-like layered structure. Therefore, TATB is one of the important research objects, and its surface structure needs to be deeply understood. In this research work, the electronic and energetic properties of TATB (001) surface are explored. Methods: In this paper, the structural, electronic, energetic properties and impact sensitivity of TATB (001) surface structure at 0 and −3 GPa along with x-axis were calculated in this study using the first-principles calculations. The calculations in this paper are performed in the CASTEP code, which is based on the density functional theory with the first-principles calculation method using the plan-wave pseudopotential approach. The exchange-correlation interaction was adopted by the generalized gradient approximation (GGA) with the Perdew-Burke-Ernzerhof (PBE) functional. The DFT-D method with the Grimme correction accurately models van der Waals interactions. To model the surface structures of TATB, the planar slab method was employed. We constructed TATB (001) periodic slabs including three layers with a 15-Å vacuum layer. [ABSTRACT FROM AUTHOR]

This work vividly demonstrates the rational design of VSe 2-x O x -SS cathode as an effective strategy to achieve fast and highly aqueous zinc ion storage. [Display omitted] • A simple and fast surface oxygen implantation strategy was designed to adjust the electronic structure of VSe 2 and form a surface protective film. • The VSe 2-x O x -SS-30 electrode showed higher specific capacity, better rate performance and more satisfactory cycling stability. • The zinc (de)intercalation and transformation reactions mechanism was revealed by some ex-situ/in-situ techniques. Interfacial chemical modification is an effective strategy to adjust the strong Coulombic ion-lattice interactions with high valence cations experienced by electrode materials, facilitating the reaction kinetic. In this paper, a simple and fast surface oxygen implantation strategy was designed to adjust the electronic structure of stainless steel (SS) supported vanadium diselenide (VSe 2) nanosheets and form a surface protective film, which effectively accelerates the reaction kinetics of Zn2+ and extends the cycle life of the battery. It is demonstrated that the conductivity, pseudocapacitance and specific capacity can be tuned by selectively introducing oxygen species to the surface, which provides an important reference for the design of electrodes with controlled surface chemistry. Density functional theory (DFT) calculations also confirm that the electronic structure can be adjusted by surface oxygen injection strategy, which not only improves the conductivity, but also adjusts the adsorption energy, thus providing favorable conditions for zinc ion storage. Benefiting from the selenium vacancies and pores generated by the removal of part of selenium, and the oxide film formed on the surfaces, the VSe 2-x O x -SS-30 electrode showed higher specific capacity (188.4 mAh/g at 0.5 A g−1 after 50 cycles), better rate performance (107.1 mAh/g at 4 A g−1) and more satisfactory cycling stability (83.1 mAh/g at 5 A g−1 after 1800 cycles) than VSe 2 -SS electrode. Importantly, the flexible quasi-solid-state VSe 2-x O x -SS-30//Zn battery also exhibits high specific capacity and excellent environmental adaptability. Furthermore, the zinc (de)intercalation and transformation reactions mechanism was revealed by some ex-situ/in-situ techniques. [ABSTRACT FROM AUTHOR]

Hydroxyapatite (HAP) is the main mineral component of bones and teeth. It is widely used in medicine as a bone filler and coating for implants to promote new bone growth. Ion substitutions into the HAP structure highly affect its properties. One of the most important substituents is magnesium. This paper presents new results obtained using high-precision hybrid density functional theory calculations for Mg/Ca substitutions in HAP in a wide magnesium concentration range within a 2 × 2 × 2 supercell model. Experimental data on the mechanochemical synthesis of HAP-Mg samples with different Mg concentrations are also presented. A comparison between the experiment and the theory showed good agreement: the HAP-Mg unit cell parameters and volume decreased with increasing degree of Mg/Ca substitution. The changes in the distances between the Ca and O, Ca and H, and Mg and O ions upon Mg/Ca substitution in different calcium positions was analyzed. The resulting asymmetry and distortion of the cell parameters were evaluated. It was shown that bulk modulus, energy levels, and band gap depend on the degree of Mg substitutions in the Ca1 and Ca2 positions. The formation energies of Mg/Ca substitutions showed non-monotonic behavior that was different for Ca1 and Ca2 positions. The Ca2 position had a slightly higher probability (~5 meV/f.u.) of substitution than Ca1 position at a Mg concentration x = 0.5. At x = 1, substitution in both positions can coexist. The simulated IR spectra for different Mg/Ca substitutions showed that Mg in the Ca2 position changes the IR spectrum more significantly than Mg in the Ca1 position. Similar changes were recorded in the IR spectra of the synthesized samples. The electronic structure is shown to be sensitive to the number and position of substitutions, which may be used to tweak the optical properties of the HAP-Mg material. [ABSTRACT FROM AUTHOR]

Context: The electronic properties and optical properties of Cr-doped monolayer WS2 under uniaxial compressive deformation have been investigated based on density functional theory. In terms of electronic structure properties, both intrinsic and doped system bandgaps decrease with the increase of compression deformation, and the values of the bandgap under the same compression deformation after Cr doping are reduced compared with the corresponding intrinsic states. When the compressive deformation reaches 10%, both the intrinsic and doped system band gaps are close to zero. New electronic states and impurity energy levels appear in the WS2 system when doped with Cr atoms. For the optical properties, the calculation and analysis of the dielectric function under each deformation regime of monolayer WS2 show that the compression deformation affects the dielectric function, and when the compression deformation is 10%, the un-doped and Cr-doped regimes show a decrease in ε1(ω) compared to the compression deformation of 8%. For each deformation system, the peak reflections occur in the ultraviolet region. Near the position where the second peak of the absorption spectrum appears, it can be seen that the ability of each system to absorb light gradually decreases with the increase of the amount of deformation and appears to be red-shifted to varying degrees. Methods: This study follows the initial principles of the density functional theory framework and is based on the CASTEP module of Materials-Studio software GGA and PBE generalizations are used to perform computations such as geometry optimization of the model. We have calculated the energy band structure of monolayer WS2 with intrinsic and compressive deformations of 2% and 4% using PBE and HSE06, respectively. The band gap values calculated using PBE are 1.802 eV, 1.663 eV, and 1.353 eV, respectively, and the band gap values calculated with HSE06 are 2.267 eV, 2.034 eV, 1.751 eV. The results show that the bandgap values calculated by HSE06 are significantly higher than those calculated by PBE, but the bandgap variations calculated by the two methods have the same trend, and the shape characteristics of the energy band structure are also the same. However, it is worth noting that the computation time required for the HSE06 calculation is much longer than that of the PBE, which is far beyond the capability of our computer hardware, and the purpose of this paper is to investigate the change rule of the effect of deformation on the bandgap value, so to save the computational resources, the next calculations are all calculated using the PBE. The Monkhorst–Pack special K-point sampling method is used in the calculations. The cutoff energy for the plane wave expansion is 400 eV, and the K-point grid is assumed to be 5 × 5 × 1. Following geometric optimization, the iterative precision converges to a value of less than 0.03 eV/Å for all atomic forces and at least 1 × 10−5 eV/atom for the total energy of each atom. The vacuum layer's thickness was selected at 20 Å to mitigate the impact of the interlayer contact force. [ABSTRACT FROM AUTHOR]

Context: The electronic properties and optical properties of Cr-doped monolayer WS2 under uniaxial compressive deformation have been investigated based on density functional theory. In terms of electronic structure properties, both intrinsic and doped system bandgaps decrease with the increase of compression deformation, and the values of the bandgap under the same compression deformation after Cr doping are reduced compared with the corresponding intrinsic states. When the compressive deformation reaches 10%, both the intrinsic and doped system band gaps are close to zero. New electronic states and impurity energy levels appear in the WS2 system when doped with Cr atoms. For the optical properties, the calculation and analysis of the dielectric function under each deformation regime of monolayer WS2 show that the compression deformation affects the dielectric function, and when the compression deformation is 10%, the un-doped and Cr-doped regimes show a decrease in ε1(ω) compared to the compression deformation of 8%. For each deformation system, the peak reflections occur in the ultraviolet region. Near the position where the second peak of the absorption spectrum appears, it can be seen that the ability of each system to absorb light gradually decreases with the increase of the amount of deformation and appears to be red-shifted to varying degrees. Methods: This study follows the initial principles of the density functional theory framework and is based on the CASTEP module of Materials-Studio software GGA and PBE generalizations are used to perform computations such as geometry optimization of the model. We have calculated the energy band structure of monolayer WS2 with intrinsic and compressive deformations of 2% and 4% using PBE and HSE06, respectively. The band gap values calculated using PBE are 1.802 eV, 1.663 eV, and 1.353 eV, respectively, and the band gap values calculated with HSE06 are 2.267 eV, 2.034 eV, 1.751 eV. The results show that the bandgap values calculated by HSE06 are significantly higher than those calculated by PBE, but the bandgap variations calculated by the two methods have the same trend, and the shape characteristics of the energy band structure are also the same. However, it is worth noting that the computation time required for the HSE06 calculation is much longer than that of the PBE, which is far beyond the capability of our computer hardware, and the purpose of this paper is to investigate the change rule of the effect of deformation on the bandgap value, so to save the computational resources, the next calculations are all calculated using the PBE. The Monkhorst–Pack special K-point sampling method is used in the calculations. The cutoff energy for the plane wave expansion is 400 eV, and the K-point grid is assumed to be 5 × 5 × 1. Following geometric optimization, the iterative precision converges to a value of less than 0.03 eV/Å for all atomic forces and at least 1 × 10−5 eV/atom for the total energy of each atom. The vacuum layer's thickness was selected at 20 Å to mitigate the impact of the interlayer contact force. [ABSTRACT FROM AUTHOR]

Context: This paper presents the results of the study of the electronic structure and cationic and excited states of three spiroborate complexes (2-acetylacetonato-1,3,2-benzodioxaborol, its NH- and NMe-derivatives) and three corresponding ligands (acetylacetone, 4-aminopent-3-en-2-one, and 4-methylaminopent-3-en-2-one). Materials based on spiroborates are used in medicine, for example, as a drug carrier. In industry, spiroborate anions are used in ionic liquids and as alternative high performance lubricants. Analysis of experimental and calculated data allowed determining the influence of functional groups on the parameters of the electronic structure and energy of electronic transitions. Compared to acetylacetone and its NH- and NMe-derivatives, the upper filled molecular orbitals of the corresponding spiroborates are stabilized at 0.4–1.7 eV, which is due to the positive charge of the ligand due to the acceptor properties of the dioxyphenylene fragment. Among the studied compounds, when replacing the oxygen atom in the α-position with the NH- or NMe-group, a bathochromic shift of intense bands in the absorption spectra is observed, since the energy intervals between the orbitals of the π3 and π4 ligand are reduced. In addition, in a number of spiroborates, the violation of C2v symmetry when replacing an oxygen atom leads to the appearance of a low-intensity maximum in the long-wave part of the absorption spectrum, due to the π2X → π4 transition. Method: Complexes were studied by photoelectron spectroscopy, absorption spectroscopy, and high-level ab initio quantum chemical computations, including the algebraic diagrammatic construction method for the polarization propagator of the second order (ADC(2)), the outer-valence Green's function (OVGF), the density functional theory (DFT), the time-dependent density functional theory (TDDFT) and the domain-based local pair natural orbital (EOM-DLPNO) methods. X-ray photoelectronic spectra of two spiroborates in the condensed state were measured using a two-chamber high-vacuum system MXPS XP (Omicron, Germany). UV–visible absorption spectra were recorded using a spectrophotometer 2550 (Shimadzu-UV, Japan). The geometry of all studied compounds was optimized by the DFT/B3LYP/Def2-SVP method. The energy of electron levels in the S0 state and the distribution of electron density at each MO were obtained by the DFT/CAMB3LYP/cc-pVDZ method. The energies of excited states were obtained by the TDDFT/CAMB3LYP/cc-pVDZ, ADC(2)/cc-pVDZ and EOM-DLPNO/cc-pVDZ methods. All DFT and TDDFT calculations were carried out in the GAMESS (US) software computing package. ADC(2) calculations of excited states were performed using the Orca 4.0.1 software package. EOM-DLPNO and OVGF calculations were carried out in the Gaussian 16 software package. [ABSTRACT FROM AUTHOR]

Context: In this paper, the structural stability, electronic structure, and optical properties of monolayer MoSe2 doped with C, O, Si, S, and Te atoms, respectively, under defective conditions are investigated based on first principles. It is found that the system is more structurally stable when defecting a single Se atom as compared to defecting a single Mo or two Se atoms. The electronic structure analysis of the system reveals that intrinsic MoSe2 is a direct bandgap semiconductor. The bandgap value of the system decreases with a single Se atom defect and introduces two new impurity energy levels in the conduction band. The defective systems doped with C and Si atoms all exhibit P-type doping. The total density of states of intrinsic MoSe2 is mainly contributed by the Mo-d and Se-p orbitals, and new density of state peaks appears near the conduction band after the defects of Se atoms. The total density of states of the defective system doped by each atom is mainly contributed by Mo-d, Se-p, and the result of the p orbital contribution of each dopant atom. By analyzing the dielectric function of each system, it is found that the intrinsic MoSe2 has the lowest static permittivity and the C-doped defect system has the highest static permittivity, which reaches 21.42. The C- and Si-doped defect systems are the first to start absorbing the light, and the intrinsic MoSe2 absorbs the light later, with its absorption edge starting at 1.25 eV. In the visible range, the reflection peaks of the systems move toward the high-energy region and the blue-shift phenomenon occurs. It is hoped that applying modification means to modulate the physical properties of the two-dimensional materials will provide some theoretical basis for broadening the application of monolayer MoSe2 in the field of optoelectronic devices. Methods: This study utilizes the first principle computational software package MS8.0 (Materials studio8.0) under density functional theory (DFT). The exchange–correlation potential (GGA-PBE) is described by the Perdew-Burke-Ernzerhof correlation function in CASTEP, and the potential function adopts the ultrasoft pseudopotential in the inverse space formulation. The plane wave truncation energy Ecut is set to 400 eV, the K-point is taken as 5 × 5 × 1, and the force convergence criterion is 0.05 eV/Å. The convergence accuracy of the total energy of the system is less than 1.0 × 10−5 eV/atom, the tolerance shift is less than 0.002 Å, and the stress deviation is less than 0.1 GPa. The vacuum layer is taken as 15 Å, which is intended to minimize the interlayer force. The vacuum layer was set to 15 Å to avoid the effect of layer-to-layer interaction forces in the crystal cell. [ABSTRACT FROM AUTHOR]

Context: In this paper, the structural stability, electronic structure, and optical properties of monolayer MoSe2 doped with C, O, Si, S, and Te atoms, respectively, under defective conditions are investigated based on first principles. It is found that the system is more structurally stable when defecting a single Se atom as compared to defecting a single Mo or two Se atoms. The electronic structure analysis of the system reveals that intrinsic MoSe2 is a direct bandgap semiconductor. The bandgap value of the system decreases with a single Se atom defect and introduces two new impurity energy levels in the conduction band. The defective systems doped with C and Si atoms all exhibit P-type doping. The total density of states of intrinsic MoSe2 is mainly contributed by the Mo-d and Se-p orbitals, and new density of state peaks appears near the conduction band after the defects of Se atoms. The total density of states of the defective system doped by each atom is mainly contributed by Mo-d, Se-p, and the result of the p orbital contribution of each dopant atom. By analyzing the dielectric function of each system, it is found that the intrinsic MoSe2 has the lowest static permittivity and the C-doped defect system has the highest static permittivity, which reaches 21.42. The C- and Si-doped defect systems are the first to start absorbing the light, and the intrinsic MoSe2 absorbs the light later, with its absorption edge starting at 1.25 eV. In the visible range, the reflection peaks of the systems move toward the high-energy region and the blue-shift phenomenon occurs. It is hoped that applying modification means to modulate the physical properties of the two-dimensional materials will provide some theoretical basis for broadening the application of monolayer MoSe2 in the field of optoelectronic devices. Methods: This study utilizes the first principle computational software package MS8.0 (Materials studio8.0) under density functional theory (DFT). The exchange–correlation potential (GGA-PBE) is described by the Perdew-Burke-Ernzerhof correlation function in CASTEP, and the potential function adopts the ultrasoft pseudopotential in the inverse space formulation. The plane wave truncation energy Ecut is set to 400 eV, the K-point is taken as 5 × 5 × 1, and the force convergence criterion is 0.05 eV/Å. The convergence accuracy of the total energy of the system is less than 1.0 × 10−5 eV/atom, the tolerance shift is less than 0.002 Å, and the stress deviation is less than 0.1 GPa. The vacuum layer is taken as 15 Å, which is intended to minimize the interlayer force. The vacuum layer was set to 15 Å to avoid the effect of layer-to-layer interaction forces in the crystal cell. [ABSTRACT FROM AUTHOR]

Scale formation causes major losses in oil wells, related to production and equipment damages. Thus, it is important to develop effective materials to prevent scale formation and inhibit any additional formation. One known environmentally friendly material with promising performance for scale inhibition is polyepoxysuccinic acid (PESA). However, the performance and further development of any scale treatment chemical is highly affected by its electronic structure and behavior. Thus, this paper aims to obtain insights into the kinetics and thermodynamics of the chemical reactions during scale inhibition by investigating the geometrical and electronic structure of PESA. Density Functional Theory (B3LYP/6–31 g (d)-lanl2dz) was used to study the structure of PESA, considering different forms of PESA and their corresponding binding affinities and chemical behaviors. The scale is represented as FeII ions, and PESA is modeled as (n = 1, and 2). Three conditions of PESA were considered: the standard form, the form with a modified electron donating group (R- = CH3-), and ammonium salt of PESA (M+ = NH4+). The results showed that PESA has a high binding affinity to FeII, comparable to known chelating agents, with the highest binding affinity for ammonium salt of PESA with the CH3- donating group (−1530 kJ/mol). The molecular orbitals (MO), electron affinity (EA), and charge analysis further explained the findings. The HOMO-LUMO gap and EA results revealed the high reactivity and thermodynamic stability of all forms of PESA. In addition, the ammonium salt form of PESA with the electron donating group performs better, as it has a greater overall negative charge in the compounds. Furthermore, the NH4+ cationic group tends to lower the value of the HOMO orbital, which increases the inhibition performance of PESA. [ABSTRACT FROM AUTHOR]

In this paper, we report the synthesis and structural characterisation of two hetero-metallic clusters, [(CO)3CrSn5Cr(CO)3]4− and [(CO)3MoSn5Mo(CO)3]4−, both of which have a pentagonal bipyramidal core. The structures are similar to that of previously reported [(CO)3MoPb5Mo(CO)3]4− and our analysis of the bonding suggests that they are best formulated as containing Sn54− rings bridging two zerovalent M(CO)3 fragments. The electronic structure is compared to two isolobal M2E5 clusters, [CpCrP5CrCp]− and Tl77−, both of which show clear evidence for trans-annular bonds between the apical atoms that is not immediately obvious in the title clusters. Our analysis shows that the balance between E-E and M-M bonding is a delicate one, and shifts in the relative energies of the orbitals on the E5 and M2 fragments generate a continuum of bonding situations linked by the degree of localisation of the cluster LUMO. [ABSTRACT FROM AUTHOR]

In this paper, the crystal structure and electronic structure of Ti 4 O 7 were calculated based on density functional theory, and Magnéli phase Ti 4 O 7 bulks were successfully prepared by spark plasma sintering (SPS). Results indicated that the contribution of Ti 3 d to Fermi level increased due to the lack of oxygen atom in lattice, and the energy band gap of Ti 4 O 7 was reduced compared with that of TiO 2. By calculating the relationship between the densification rate and effective stress in the process of SPS, it can be known that the densification mechanism of Ti 4 O 7 powders was controlled by diffusion. Based on this, under the conditions of sintering temperature of 1000 °C, holding time of 10 min and sintering pressure of 30 MPa, Ti 4 O 7 bulks with the optimal electrical conductivity (961.5 S cm−1) could be obtained, which was more than 30% higher than the graphite material reported in literature. The results reveals that Ti 4 O 7 will be one of the most promising electrode materials in the electrochemical field. [ABSTRACT FROM AUTHOR]

Computational study plays an important role to discover the potential of the bio-inspired nano scale molecular devices. Density Functional Theory (DFT) is one of the popular methods to calculate the properties of the molecules which can not be possible with ab initio process, preferably for transition metals. This method is important for electronic structure calculation along with structure of molecules, atoms and solids can also be calculated using this DFT method. It is the quantitative method to understand the material properties using the laws of fundamental quantum mechanics. The key benefit of Non Equilibrium Greens’ Function (NEGF) is that it preserves the wave character of the electrons, which leads to a extremely precise description of nanoscale. Combining theses DFT and NEGF calculation first principle approach reveal the quantumballistic properties of atomic scale electronic structures which is therefore attracts the researchers for their innovative calculations for nano scale device modelling. In this paper, we briefly discuss the review on various bio-molecular devices and their significances. Now-a-days bio inspired devices show more attractions due to their versatility compared to the conventional electronic devices. These nano scale devices are popular due to their performance, speed and high charge transmission properties compared to other conventional semiconductor devices. This review work presents some experimental works at the molecular level along with a variety of research works that are performed based on first principle approach. Several case studies prevails the importance of DFT and NEGF based first principle approach for nano scale device modelling. [ABSTRACT FROM AUTHOR]

[Display omitted] • The porous few-layer bimetallic co-doped g-C 3 N 4 is prepared via a facile bottom-up method. • The bimetallic synergetic regulating effect on the electronic structure can be produced in Co/Ni-g-C 3 N 4. • The superior performance results from the improved charge separation efficiency and visible light harvestability. • This work provides meritorious guidance for new bimetallic co-doped g-C 3 N 4 photocatalysts. The low specific surface area and low charge transfer efficiency of conventional graphite carbon nitride (g-C 3 N 4) are the main obstacles to its application in photocatalytic CO 2 reduction. In this paper, graphite carbon nitride was protonated by phosphoric acid (H 3 PO 4), and a new few-layer porous carbon nitride was prepared by intercalation polymerization with doping bimetal in the cavity of g-C 3 N 4. Under visible light irradiation, the CO formation rate of Co/Ni co-doped g-C 3 N 4 can reach 13.55 μmol g−1 h−1, which was 3.9 times higher than that of g-C 3 N 4 (3.49 μmol g−1 h−1). The density functional theory (DFT) calculations showed that the addition of Co and Ni in the cavity of g-C 3 N 4 can induce bimetallic synergistic regulation of the electronic structure, thus improving the separation efficiency of charges and visible light capture ability of g-C 3 N 4. Our work has great reference value for designing and synthesizing novel bimetallic co-doped g-C 3 N 4 photocatalytic materials. [ABSTRACT FROM AUTHOR]

Perovskites are a class of semiconductors initially recognized for their exceptional efficiency in solar cell applications. Subsequent research has revealed their diverse and attractive optoelectronic properties. Over the last decades, molecule-level engineering attempts toward the original three-dimensional ("3D") perovskites have led to the emergence of two-dimensional ("2D") layered crystals and introduced extensive compositional, structural, and electronic tunability through the incorporation of various organic cations to form hybrid perovskite systems. Consequently, we concentrated on the theoretical investigation of innovative and complex 2D hybrid organic-inorganic perovskites using density functional theory (DFT). A DFT-based simulation protocol has been developed, enabling the efficient simulation of hybrid perovskite systems and providing accurate explanations and predictions of various experimental phenomena. This account article summarizes the recent in-depth DFT study of the structural, electronic, and spinrelated properties of 2D hybrid organic-inorganic perovskites. [ABSTRACT FROM AUTHOR]

This study explores the potential of MoS2 monolayers as heavy metal sensors for As, Cd, Hg, and Pb using density functional theory (DFT) and Non-Equilibrium Green's Function (NEGF) simulations. Our findings reveal that As and Pb adsorption significantly alters the surface structure and electronic properties of MoS2, introducing impurity levels and reducing the band gap. Conversely, Cd and Hg exhibit weaker interactions with the MoS2 surface. The MoS2 monolayer sensors demonstrate exceptional sensitivity for all four target heavy metals, with values reaching 126,452.28% for As, 1862.67% for Cd, 427.71% for Hg, and 83,438.90% for Pb. Additionally, the sensors demonstrate selectivity for As and Pb through distinct response peaks at specific bias voltages. As and Pb adsorption also induces magnetism in the MoS2 system, potentially enabling magnetic sensing applications. The MoS2 monolayer's moderate adsorption energy facilitates rapid sensor recovery at room temperature for As, Hg, and Cd. Notably, Pb recovery time can be significantly reduced at elevated temperatures, highlighting the reusability of the sensor. These results underscore the potential of MoS2 monolayers as highly sensitive, selective, and regenerable sensors for real-time heavy metal detection. [ABSTRACT FROM AUTHOR]

Perovskites are a class of semiconductors initially recognized for their exceptional efficiency in solar cell applications. Subsequent research has revealed their diverse and attractive optoelectronic properties. Over the last decades, molecule-level engineering attempts toward the original three-dimensional ("3D") perovskites have led to the emergence of two-dimensional ("2D") layered crystals and introduced extensive compositional, structural, and electronic tunability through the incorporation of various organic cations to form hybrid perovskite systems. Consequently, we concentrated on the theoretical investigation of innovative and complex 2D hybrid organic-inorganic perovskites using density functional theory (DFT). A DFT-based simulation protocol has been developed, enabling the efficient simulation of hybrid perovskite systems and providing accurate explanations and predictions of various experimental phenomena. This account article summarizes the recent in-depth DFT study of the structural, electronic, and spin-related properties of 2D hybrid organic-inorganic perovskites. [ABSTRACT FROM AUTHOR]

This paper employs the Heyd-Scuseria-Ernzerhof (HSE) function to research electronic structures of monolayer InxAl1-xN with different compositions (x = 0, 0.25, 0.5, 0.75, 1) based on the first-principles, and the optical properties of singlelayer InxAl1-xN are calculated by Generalized Gradient Approximation-Perdew Burke Ernzerhof (GGA-PBE) function. The influence of the electronic structure on the properties has been analyzed. Then the influence of doping quantity on the characteristics has been summarized, which also indicates the trend of the complex dielectric function and absorption spectrum. The calculation results show that with the increase of x, the static dielectric constant increases, the electron transition ability increases, and the absorption peak intensity in the light absorption spectrum increases. It can conclude that the InxAl1-xN compound can theoretically achieve the adjustable Eg and photoelectric performance with x, which will apply in making various optoelectronic devices, including solar cells and sensors. [ABSTRACT FROM AUTHOR]

[Display omitted] • Molar diamagnetic susceptibility values for some amino acids are reported for the first time. • The results obtained are evaluated in terms of electronic structure principles. • Molar diamagnetic susceptibility can be used in the introducing new chemical hardness, polarizability and entropy scales. One of the main aims of the theoretical chemists is to introduce new and useful approaches for the estimation of chemical reactivity descriptors of Conceptual Density Functional Theory (CDFT) like absolute hardness, polarizability and magnetizability. In addition to providing results close to experimental results, the methods developed for this purpose must also be easily applicable to many molecular systems and easy to learn. "Property Prediction from Structural Differences" method proposed by one of the authors of this article is based on the idea that various properties of molecules can be easily calculated by taking the sum of the functional group contributions in the structure of the molecule. The most important thing in the applying of the method is the reliable determination of functional group contributions. In the present paper, using "Property Prediction from Structural Differences" method, we predicted the molar diamagnetic susceptibilities of amino acids with reasonably good accuracy. The computed values are in good agreement with experimental data and the results of previously introduced theoretical models. The reason why amino acids were especially preferred in the study is the lack of the molar diamagnetic susceptibility data of some amino acids in the literature. Additionally, to test whether a molar diamagnetic susceptibility based scale can be proposed for the calculation of any CDFT based reactivity descriptor, DFT computations were also performed for amino acid molecules. The relationships between parameters were evaluated in terms of the electronic structure rules like Maximum Hardness, Minimum Polarizability, Minimum Magnetizability and Minimum Electrophilicity Principles. [ABSTRACT FROM AUTHOR]

Density Functional Theory is employed to investigate how specific rare earth (RE) dopants (Pr, Y, Dy) affect the electronic, magnetic, and optical characteristics of Co0.5Ni0.5Fe2O4 (CN) spinel ferrites. The impact of RE atoms, which replace Fe ions in the supercell, is elucidated by analyzing the spin-resolved density of states, magnetic moment, and optical parameters. The findings demonstrate that both single and collective RE doping play a vital role in manipulating the key properties of these materials. Notably, we reveal that incorporating RE dopants into CN structures leads to a reduction in the energy band gap. Additionally, this work underscores substantial spin-dependent behavior and provides valuable insights into optical properties, suggesting that RE-doped CNs hold significant potential in the fields of spintronics and optoelectronics. [ABSTRACT FROM AUTHOR]

First principles calculations of the structural, electronic and optical properties of GaSb, InSb and their ternary Ga 1 - x In x Sb alloys (x = 0.25, 0.50 and 0.75) have been performed using the full-potential linear muffin-tin orbital (FP-LAPW) method within density functional theory (DFT). The generalized gradient approximation and modified Becke and Janson functional with local density approximation (mBJ–LDA) are utilized for the treatment of exchange and correlation potentials. The results show the calculated lattice constants increase linearity with increasing the In concentration. The electronic band structure indicates that these alloys are direct band gap semiconductors for all the values of x and the band gap decreases as x increases from x = 0 to x = 1. The results also show that the there is a non-linear dependence of the band gap on composition x in Ga 1 - x In x Sb alloys. Regarding optical properties, the real and imaginary parts of the dielectric function have been calculated. The results show that the static dielectric constant increases with increase in concentration of In, consistent with reduction in energy band gap. The onset point and major peaks in the imaginary parts of the dielectric function spectra are identified for the Ga 1 - x In x Sb alloys and shown that they are related to the corresponding band gap values. The results also show that for energy values higher than ≅ 4 eV, the electromagnetic wave transition through Ga 1 - x In x Sb alloys is nearly zero. [ABSTRACT FROM AUTHOR]

The method of density functional theory (DFT) combined with Hubbard U correction has been employed in wide-ranging applications in correlated systems. Although the DFT+U method can dramatically improve the treatment of many strongly correlated systems, careful attention must be paid to those parameters that significantly influence results. By varying the local-projection size with the muffin-tin radius, we examine the effect of the Hubbard U correction on lattice parameters, electronic structure, and the relative stability of TiO2 between rutile and anatase. Our results show that different ranges of the local projection can produce strikingly different quantitative results, leading to distinct conclusions. The quantitative discrepancies are attributed to the sensitivity of the occupancy numbers for the correlated orbitals toward the size of the projection subspace. [ABSTRACT FROM AUTHOR]

We investigated the electronic structure of Mg-, Si-, and Zn-doped four-faceted [001]- and [110]-oriented SnO2 nanowires using first-principles calculations based on the linear combination of atomic orbitals (LCAO) method. This approach, employing atomic-centered Gaussian-type functions as a basis set, was combined with hybrid density functional theory (DFT). Our results show qualitative agreement in predicting the formation of stable point defects due to atom substitutions on the surface of the SnO2 nanowire. Doping induces substantial atomic relaxation in the nanowires, changes in the covalency of the dopant–oxygen bond, and additional charge redistribution between the dopant and nanowire. Furthermore, our calculations reveal a narrowing of the band gap resulting from the emergence of midgap states induced by the incorporated defects. This study provides insights into the altered electronic properties caused by Mg, Si, and Zn doping, contributing to the further design of SnO2 nanowires for advanced electronic, optoelectronic, photovoltaic, and photocatalytic applications. [ABSTRACT FROM AUTHOR]

In the present work, 15 Mo/VC interfaces were investigated using first-principles calculations based on density functional theory. Four possible interface orientations, two terminations, and three stacking sites were considered. The adhesion energy (Wad) and interfacial energy (Eint) of these interface models were computed. The results indicate that the C-terminated hollow-site Mo(110)/VC(111) interface exhibits the highest stability with a larger Wad value of 10.64 J m−2 and the lowest Eint value of 2.98 J m−2, followed by the V-terminated central-site Mo(211)/VC(220) interface. Analysis of the electronic structure reveals the formation of strong polar covalent bonds at these interfaces. Additionally, simulations of tensile fracture processes were performed, demonstrating that at strains reaching 22% and 32%, respectively, the ideal tensile strengths for the C-terminated hollow-site Mo(110)/VC(111) interface and V-terminated central-site Mo(211)/VC(220) interface are ∼26.01 and 35.53 GPa. In particular, in the C-terminated hollow-site Mo(110)/VC(111) interface, fracture occurs in the Mo slabs due to concentrated strain when external strain is applied; meanwhile, uniform strain is observed in both Mo(211) and VC(200) slabs within this system. Notably, the V-terminated central-site Mo(211)/VC (220) interface demonstrates excellent tensile strength as well as toughness. These findings suggest that explaining solely based on adhesion work is insufficient to account for the observed tensile strength at these interfaces. [ABSTRACT FROM AUTHOR]

Summary: The sensing behaviors of monolayer antimonide phosphorus (SbP) for hydrogen sulfide (H2S) are investigated by means of the density functional theory. In this paper, we calculated the best adsorption configuration, charge transfer, adsorption distance, band gap, electronic structure and recovery time of H2S on the SbP monolayer and mental-doped SbP (X-SbP). The calculated results indicate that Al atom replaces Sb atom of SbP (Al-Sb-SbP), adsorption capacity was greatly increased, but the covalent bond formed between the gas molecules and the substrate was not suitable for sensing materials. And though Co or Ni atom could improve the interactions between H2S gas and SbP sheets, the recovery time was too long. It was also not suitable for the sensor material of H2S gas. However, for Pd doped SbP, Pd-Sb and Pd-P doping all exhibit excellent gas sensing performance for H2S gas with the adsorption energy of-0.677eV and-0.520eV, the charge transfer 0.1113e and 0.0930e, the recovery time 0.19s and 5.30×10-4 s, respectively. These characters made Pd-SbP suitable for H2S gas sensing material. Which further analysis we knew that these changes were mainly due to the orbital hybridization between the s, p orbitals of Pd atom and the p orbitals of S atom. Theoretical studies show that Pd-doped SbP is a promising H2S gas sensing material. [ABSTRACT FROM AUTHOR]

• The geometric, electronic and elastic properties of Fe 3 SnC are calculated in detail for the first time. • The results show that Fe 3 SnC is a magnetic metal. • The large elastic modulus indicates that Fe 3 SnC is a potential cermet. In this paper, the structural, electronic, and elastic properties of Fe 3 SnC were calculated based on local density approximation (LDA) and generalized gradient approximation (GGA) in density functional theory (DFT). Compared with GGA, LDA underestimates lattice constants and overestimates binding energy and elastic constants. The calculated lattice constants are 3.76 Å (LDA) and 3.83 Å (GGA), respectively, and the latter is closer to the experimental values. With U correction in GGA and LDA, the magnetic properties of the system are shown in the band structure. The GGA calculation results are more accurate, and the calculated magnetic moment of Fe 3 SnC is 5.74μ B. The band structure indicates that Fe 3 SnC is a metallic compound. The elastic constants show that Fe 3 SnC has a large elastic constant and bulk modulus, in which the C 11 calculated by GGA is as high as 463.81GPa, and the Young's modulus is as high as 350.72GPa. This indicates that Fe 3 SnC is a potential cermet due to a strong deformation resistance. At the same time, with the minimum thermal conductivity of 1.65 W/mK calculated by the Cahill model. [ABSTRACT FROM AUTHOR]

As a consequence of its high atomic number density, diamond can incorporate a relatively limited range of impurities as distributed point-defects, chiefly N, B and H. A few other species can be grown-in, and other impurity species incorporated via implantation and annealing. For applications including electronic, electrical and quantum devices, the presence of states deep within the wide band-gap is of importance, and the list of potential colour centres available for exploitation continues to grow. Although B can be grown into diamond at high concentration, study of other group-13 elements is rather limited. In this paper we present the results of modelling of Al, Ga and In. We find all species readily form complexes with vacancies, and exhibit electronic structures that parallel those of the Si V complex. We report electronic structures, electrical levels, optical transitions and hyperfine interactions of the colour centres, as well as reflect upon the thermodynamics of the complexes. We suggest that co-implanting group-13 elements with nitrogen would give rise to the defect charge states with potential for quantum applications. [Display omitted] • Group-13 impurities, Al, Ga and In, form viable colour centres in diamond for quantum-based technology when co-doped with N • Colour centres may either involve a vacancy or a complex with both a vacancy and nitrogen • Predictions of observables of substitutional Al, Ga and In, their complexes with vacancies and nitrogen are reported • Implanted impurities are not expected to be observed as interstitials after annealing [ABSTRACT FROM AUTHOR]

To satisfy the need for catalyst materials with high activity, selectivity, and stability for energy conversion, material design and discovery guided by theoretical insights are a necessity. In the past decades, the rise in theoretical investigations into the properties of catalyst materials, reaction mechanisms, and catalyst design principles has shed light on the catalysis field. Quantitative structure–activity relationships have been developed through incorporating spectroscopic simulations, electronic structure calculations, and reaction mechanistic studies. In this review, we report the state-of-the-art computational approaches to catalyst materials characterization for supported single-atom and cluster catalysts utilizing spectroscopic simulations, i.e., XANES simulation, and material properties investigation via electronic-structure calculations. Furthermore, approaches regarding reaction mechanisms, focusing on active site heterogeneity, are also discussed. [ABSTRACT FROM AUTHOR]

Low carbon alcohol fuels electrolysis under ambient conditions is promising for green hydrogen generation instead of the traditional alcohol fuels steam reforming technique, and highly efficient bifunctional catalysts for membrane electrode fabrication are required to drive the electrolysis reactions. Herein, the efficient catalytic promotion effect of a novel catalyst promoter, CoTe, on Pt is demonstrated for low carbon alcohol fuels of methanol and ethanol electrolysis for hydrogen generation. Experimental and density functional theory calculation results indicate that the optimized electronic structure of Pt-CoTe/C resulting from the synergetic effect between Pt and CoTe further regulates the adsorption energies of CO and H* that enhances the catalytic ability for methanol and ethanol electrolysis. Moreover, the good water activation ability of CoTe and the strong electronic effect of Pt and CoTe increased the tolerance ability to the poisoning species as demonstrated by the CO-stripping technique. The high catalytic kinetics and stability, as well as the promotion effect, were also carefully discussed. Specifically, 71.9% and 75.5% of the initial peak current density was maintained after 1000 CV cycles in acid electrolyte for methanol and ethanol oxidation; and a low overpotential of 30 and 35 mV was required to drive the hydrogen evolution reaction in methanol and ethanol solution at the current density of 10 mA cm-2. In the two-electrode system for alcohol fuels electrolysis, using the optimal Pt-CoTe/C catalyst as bi-functional catalysts, the cell potential of 0.66 V (0.67 V) was required to achieve 10 mA cm-2 for methanol (ethanol) electrolysis, much smaller than that of water electrolysis (1.76 V). The current study offers a novel platform for hydrogen generation via low carbon alcohol fuel electrolysis, and the result is helpful to the catalysis mechanism understanding of Pt assisted by the novel promoter. [ABSTRACT FROM AUTHOR]

Magnetic thin-film modeling stands as a dynamic nexus of scientific inquiry and technological advancement, poised at the vanguard of materials science exploration. Leveraging a diverse suite of computational methodologies, including Monte Carlo simulations and molecular dynamics, researchers meticulously dissect the intricate interplay governing magnetism and thin-film growth across heterogeneous substrates. Recent strides, notably in multiscale modeling and machine learning paradigms, have engendered a paradigm shift in predictive capabilities, facilitating a nuanced understanding of thin-film dynamics spanning disparate spatiotemporal regimes. This interdisciplinary synergy, complemented by avantgarde experimental modalities such as in situ microscopy, promises a tapestry of transformative advancements in magnetic materials with far-reaching implications across multifaceted domains including magnetic data storage, spintronics, and magnetic sensing technologies. The confluence of computational modeling and experimental validation heralds a new era of scientific rigor, affording unparalleled insights into the real-time dynamics of magnetic films and bolstering the fidelity of predictive models. As researchers chart an ambitiously uncharted trajectory, the burgeoning realm of magnetic thin-film modeling burgeons with promise, poised to unlock novel paradigms in materials science and engineering. Through this intricate nexus of theoretical elucidation and empirical validation, magnetic thin-film modeling heralds a future replete with innovation, catalyzing a renaissance in technological possibilities across diverse industrial landscapes. [ABSTRACT FROM AUTHOR]

The possibility of using graphane monolayer crystals as an electrode material is becoming popular. Graphane is stable at room temperature and has a large surface area, but its chemical inertness hinders its direct interactions with Li ions. In this study, we performed density functional theory calculations to study the energetic stability and structural and electronic properties of Li on graphane with various CH divacancy configurations (v12, v13, and v14). The results show that the adsorption of the Li atom reduces the formation energy of the CH divacancy configurations. The Li-v12 is most stable with the highest binding energy of 3.25 eV/Li and relaxes to in-plane with other C atoms. Altering the Li charge state to have Li−1-v12 or Li+1-v12 affects the energetic stability and electronic characters of Li-v12. The Li−1-v12 (Li+1-v12) slightly (greatly) reduces the binding force between the Li and v12 configuration, and furthermore it improves (deteriorates) the conductivity of the structure. Further investigation of graphane with vacancies is encouraged due to these intriguing observations, as it holds promise for potential utilization as an electrode material. [ABSTRACT FROM AUTHOR]

Herein, a remarkable achievement in the synthesis and characterization of an atomically precise copper‐hydride nanocluster, [Cu41(SC6H3F2)15Cl3(P(PhF)3)6(H)25]2− via a mild one‐pot reaction is presented. Through X‐ray crystallography analysis, it is revealed that [Cu41(SC6H3F2)15Cl3(P(PhF)3)6(H)25]2− exhibits a unique shell–core–shell structure. The inner Cu29 kernel is composed of three twisted Cu13 units, connected through Cu4 face sharing. Surrounding the metal core, two Cu6 metal shells, resembling a protective sandwich structure are observed. This arrangement, along with intracluster π···π interactions and intercluster C─H···F─C interactions, contributes to the enhanced stability of [Cu41(SC6H3F2)15Cl3(P(PhF)3)6(H)25]2−. The presence, number, and location of hydrides within the nanocluster are established through a combination of experimental and density functional theory investigations. Notably, the addition of a phosphine ligand triggers a fascinating nanocluster‐to‐nanocluster transformation in [Cu41(SC6H3F2)15Cl3(P(PhF)3)6(H)25]2−, resulting in the generation of two nanoclusters, [Cu14(SC6H3F2)3(PPh3)8H10]+ and [Cu13(SC6H3F2)3(P(PhF)3)7H10]0. Furthermore, it is demonstrated that [Cu41(SC6H3F2)15Cl3(P(PhF)3)6(H)25]2− exhibits catalytic activity in the hydrogenation of nitroarenes. This intriguing nanocluster provides a unique opportunity to explore the assembly of M13 units, similar to other coinage metal nanoclusters, and investigate the nanocluster‐to‐nanocluster transformation in phosphine and thiol ligand co‐protected copper nanoclusters. [ABSTRACT FROM AUTHOR]

The ability to realistically simulate the electronic structure of superconducting materials is important to understand and predict various properties emerging in both the superconducting topological and spintronics realms. We introduce a tight-binding implementation of the Bogoliubov–de Gennes method, parameterized from density functional theory, which we utilize to explore the bulk and thin films of Nb, known to host a significant superconducting gap. The latter is useful for various applications such as the exploration of trivial and topological in-gap states. Here, we focus on the simulation's aspects of superconductivity and study the impact of temperature, Cooper-pair coupling and dimensionality on the value of the superconducting pairing interactions and gaps. [ABSTRACT FROM AUTHOR]

We propose a quantum science platform utilizing the dipole-dipole coupling between donor-acceptor pairs (DAPs) in wide bandgap semiconductors to realize optically controllable, long-range interactions between defects in the solid state. We carry out calculations based on density functional theory (DFT) to investigate the electronic structure and interactions of DAPs formed by various substitutional point-defects in diamond and silicon carbide (SiC). We determine the most stable charge states and evaluate zero phonon lines using constrained DFT and compare our results with those of simple donor-acceptor pair (DAP) models. We show that polarization differences between ground and excited states lead to unusually large electric dipole moments for several DAPs in diamond and SiC. We predict photoluminescence spectra for selected substitutional atoms and show that while B-N pairs in diamond are challenging to control due to their large electron-phonon coupling, DAPs in SiC, especially Al-N pairs, are suitable candidates to realize long-range optically controllable interactions. [ABSTRACT FROM AUTHOR]

Herein, the electron conductivities of [18]annulene and its derivatives are theoretically examined as a molecular parallel circuit model consisting of two linear polyenes. Their electron conductivities are estimated by elastic scattering Green's function (ESGF) theory and density functional theory (DFT) methods. The calculated conductivity of the [18]annulene does not follow the classical conductivity, i.e., Ohm's law, suggesting the importance of a quantum interference effect in single molecules. By introducing electron-withdrawing groups into the annulene framework, on the other hand, a spin-polarized electronic structure appears, and the quantum interference effect is significantly suppressed. In addition, the total current is affected by the spin polarization because of the asymmetry in the coupling constant between the molecule and electrodes. From these results, it is suggested that the electron conductivity as well as the quantum interference effect of π-conjugated molecular systems can be designed using their open-shell nature, which is chemically controlled by the substituents. [ABSTRACT FROM AUTHOR]

Ultrathin solid slabs often have properties different from those of the bulk phase. This effect can be observed both in traditional three-dimensional materials and in van der Waals (vdW) solids in the few monolayer limit. In the present work, the band gap variation of the CdTe slabs, induced by their thickness, was studied by the density functional theory (DFT) method for the sphalerite (zinc-blende) phase and for the recently proposed inverted phase. The sphalerite phase has the Te–Cd–Te–Cd atomic plane sequence, while in the inverted phase Cd atoms are sandwiched by Te planes forming vdW blocks with the sequence Te–Cd–Cd–Te. Based on these building blocks, a bulk vdW CdTe crystal was built, whose thermodynamical stability was verified by DFT calculations. Band structures and partial densities of states for sphalerite and inverted phases were calculated. It was demonstrated for both phases that using slabs with a thickness of one to several monolayers for sphalerite phase (vdW blocks for inverted phase), structures with band gaps varying in a wide range can be obtained. The presented results allow us to argue that ultrathin CdTe can be a promising electronic material. [ABSTRACT FROM AUTHOR]

Thermally assisted occupation density functional theory (TAO-DFT) has been an efficient electronic structure method for studying the ground-state properties of large electronic systems with multi-reference character over the past few years. To explore the time-dependent (TD) properties of electronic systems (e.g., subject to an intense laser pulse), in this work, we propose a real-time (RT) extension of TAO-DFT, denoted as RT-TAO-DFT. Moreover, we employ RT-TAO-DFT to study the high-order harmonic generation (HHG) spectra and related TD properties of molecular hydrogen H 2 at the equilibrium and stretched geometries, aligned along the polarization of an intense linearly polarized laser pulse. The TD properties obtained with RT-TAO-DFT are compared with those obtained with the widely used time-dependent Kohn–Sham (TDKS) method. In addition, issues related to the possible spin-symmetry breaking effects in the TD properties are discussed. [ABSTRACT FROM AUTHOR]

In this paper, the structural, electronic, and elastic properties of Fe3SnC were calculated based on local density approximation (LDA) and generalized gradient approximation (GGA) in density functional theory (DFT). Compared with GGA, LDA underestimates lattice constants and overestimates binding energy and elastic constants. The calculated lattice constants are 3.76 Å (LDA) and 3.83 Å (GGA), respectively, and the latter is closer to the experimental values. With U correction in GGA and LDA, the magnetic properties of the system are shown in the band structure. The GGA calculation results are more accurate, and the calculated magnetic moment of Fe3SnC is 5.74μB. The band structure indicates that Fe3SnC is a metallic compound. The elastic constants show that Fe3SnC has a large elastic constant and bulk modulus, in which the C11 calculated by GGA is as high as 463.81GPa, and the Young's modulus is as high as 350.72GPa. This indicates that Fe3SnC is a potential cermet due to a strong deformation resistance. At the same time, with the minimum thermal conductivity of 1.65 W/mK calculated by the Cahill model.

Strain engineering is a promising and fascinating approach to tailoring the electrical and optical properties of 2D materials, which is of great importance for fabricating excellent nano-devices. Although previous theoretical works have proved that the monolayer tellurene has desirable mechanical properties with the capability of withstanding large deformation and the tunable band gap and mobility conductance induced by in-plane strain, the effects of in-plane and out-of-plane strains on the properties of few-layer tellurene in different phases should be explored deeply. In this paper, calculations based on first-principles density functional theory were performed to predict the variation in crystal structures and electronic properties of few-layer tellurene, including the α and β phases. The analyses of mechanical properties show that few-layer α-Te can be more easily deformed in the armchair direction than β-Te owing to its lower Young's modulus and Poisson's ratio. The α-Te can be converted to β-Te by in-plane compressive strain. The variations in band structures indicate that the uniaxial strain can tune the band structures and even induce the semiconductor-to-metal transition in both few-layer α-Te and β-Te. Moreover, the compressive strain in the zigzag direction is the most feasible scheme due to the lower transition strain. In addition, few-layer β-Te is more easily converted to metal especially for the thicker flakes considering its smaller band gap. Hence, the strain-induced tunable electronic properties and semiconductor-to-metal transition of tellurene provide a theoretical foundation for fabricating metal–semiconductor junctions and corresponding nano-devices. [ABSTRACT FROM AUTHOR]

In this paper, the electronic structures of rare earth (Nd, Er)-doped MgO were investigated using density functional theory (DFT), with Hubbard on-site corrections (Ueff) applied to rare earth elements. Li was considered a co-dopant. Defect complexes were involved, instead of a single dopant atom, in the supercell. The splitting and distribution of the 4f ground states of Nd and Er dopants in the band gap changed by co-doping Li. The calculation results provide insights into the influences of Li on the optical properties of rare-earth-doped MgO.

The non-linear threshold-type current-voltage behavior that characterizes selector devices for three-dimensional (3D) crossbar-type nonvolatile memory devices relies upon a phenomenon known as Ovonic threshold switching (OTS). Because current practical OTS materials are based on toxic elements, such as Se and As, Te-based OTS materials are expected to offer a more environmentally friendly option. However, the electronic structure that determines the OTS behavior of Te-based OTS materials is not well understood. In this paper, the electronic structure of amorphous Si 0.29 Te 0.71 , has been explored using hard X-ray photoelectron spectroscopy (HAXPES) in conjunction with density functional theory (DFT) calculations. The HAXPES results show that the Si 0.29 Te 0.71 amorphous network of the simulated amorphous structure is based upon Te-Te, Te-Si, and Si-Si bonding. DFT calculations revealed that Si3p and Te5p states contribute to bonding, whereas occupied non-bonding Te5p states form the top of the valence state. A projected local density of states analysis shows that the Si site forms conduction-tail states, whereas the Te site forms both conduction- and valence-tail states. Furthermore, Te-Te dimers contribute significantly to the midgap states that characterize the OTS behavior. Finally, the valence-tail state extension within the mobility gap of Si 0.29 Te 0.71 was experimentally demonstrated. [Display omitted] [ABSTRACT FROM AUTHOR]