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In this study, an intense pulsed light (IPL) annealing process for a printed multi-layered indium–gallium–zinc–oxide (IGZO) and silver (Ag) electrode structure was developed for a high performance all-printed inorganic thin film transistor (TFT). Through a solution process using IGZO precursor and Ag ink, the bottom gate structure TFT was fabricated. The spin coating method was used to form the IGZO semiconductor layer on a heavily-doped silicon wafer covered with thermally grown silicon dioxide. The annealing process of the IGZO layer utilized an optimized IPL irradiation process. The Ag inks were printed on the IGZO layer by screen printing to form the source and drain (S/D) pattern. This S/D pattern was dried by near infrared radiation (NIR) and the dried S/D pattern was sintered with intense pulsed light by varying the irradiation energy. The performances of the all-printed TFT such as the field effect mobility and on–off ratio electrical transfer properties were measured by a parameter analyzer. The interfacial analysis including the contact resistance and cross-sectional microstructure analysis is essential because diffusion phenomenon can occur during the annealing and sintering process. Consequently, this TFT device showed noteworthy performance (field effect mobility: 7.96 cm2/V s, on/off ratio: 107). This is similar performance compared to a conventional TFT, which is expected to open a new path in the printed metal oxide-based TFT field. [ABSTRACT FROM AUTHOR]

Accurate and non-destructive measurement of thin layer thickness is critical for ensuring the quality and performance of microelectronic devices. In this study, terahertz time-domain spectroscopy (THz-TDS) was used to measure the combined thickness of a silicon wafer and its deposited thin layer without requiring prior knowledge of the individual material properties. The multi-reflected THz signals from the Si wafer were utilized to accurately calculate the actual thickness and optical properties with a 0.19% error. In the reflection measurement, the variation of optical properties was measured according to the thickness of the deposition through the quartz chamber window. To overcome the intrinsic overlapping of the pulse signal through the quartz chamber window, the detection time of unwanted signals was calculated theoretically, and the inspection conditions such as quartz window thickness and distances between the wafer and window were optimized for accurate measurement with THz-TDS. Based on these results, the accuracy of thickness prediction in the thin layer was confirmed with 4.2% of an error. [ABSTRACT FROM AUTHOR]

Toe joint is known as one of the critical factors in designing a prosthetic foot due to its nonlinear stiffness characteristic. This stiffness characteristic provides a general feeling of springiness in the toe-off and it also affects the ankle kinetics. In this study, the toe part of the prosthetic foot was designed to improve walking performance. The toe joint was implemented as a single part suitable for 3D printing. The various shape factors such as curved shape, bending space, auxetic structure, and bending zone were applied to mimic human foot characteristics. The finite element analysis (FEA) was conducted to simulate terminal stance (from heel-off to toe-off) using the designed prosthetic foot. To find the structure with characteristics similar to the human foot, the optimization was performed based on the toe joint geometries. As a result, the optimized foot showed good agreement with human foot behavior in the toe torque-angle curve. Finally, the simulation conditions were validated by comparing with human walking data and it was confirmed that the designed prosthetic foot structure can implement the human foot function. [ABSTRACT FROM AUTHOR]