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To meet the current requirements of diluted magnetic semiconductors (DMSs) resulting from continuous advancements in spintronics, designing d0 DMSs with high stability, spin polarization, and Curie temperature is essential. Present research on introducing d0 magnetism is limited to monatomic doping, lacking regulation measures for local magnetic moments and long range magnetic coupling. Herein, an adjacent doping strategy is employed to introduce degrees of freedom for tuning the magnetic properties of d0 DMSs. It is observed that by introducing Si and O atoms as central and adjacent dopants, respectively, the intrinsically nonmagnetic hexagonal boron nitride (h-BN) exhibits significant local magnetic moments. Furthermore, it is observed that the ionization energy, total magnetic moment, magnetic coupling, and Curie temperature of the doped h-BN are susceptible to the Si–O coordination. Subsequently, a magnetic half-metal (Si–O3-doped h-BN) with high thermal stability, 100% spin polarization, long range ferromagnetic coupling, and high Curie temperature is designed through high Si–O coordination doping. This study proposes a feasible approach for introducing tunable d0 magnetism using the design of Si–O adjacent-doped h-BN as an example. [ABSTRACT FROM AUTHOR]

Herein, we propose and provide evidence for the experimentally and theoretically promising route of exploring spintronics materials with high performance via a synthetic hybrid of half-metallic ferromagnet and diluted magnetic semiconductor. Crystalline and well-ordered [Co2FeGe/Ge(Mn)]n superlattice, which is free of secondary phase separation, were prepared by the hybridization of end members, Co2FeGe and Ge(Mn), using the molecular beam epitaxy technique. Besides comparable magnetic properties with respect to the Co2FeGe films, the superlattice sample exhibits superior properties in electric conductivity and spin polarization, thus enhancing in favor of the spin injection efficiency. These results demonstrate the high feasibility of spintronics materials with low saturation magnetization, small coercivity, high Curie temperature, and high spin injection efficiency through the proposed route in this work. [ABSTRACT FROM AUTHOR]