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In this paper, δ-doped partially insulated junctionless transistor (δ-Pi-OXJLT) has been proposed which shows that, employing highly doped δ-region below the channel not only reduces the off-state leakage current ( I OFF ) and short channel effects (SCEs) but also reduce the requirements of scaling channel thickness of junctionless transistor (JLT). The comparative analysis of digital and analog circuit performance of proposed δ-Pi-OXJLT, bulk planar (BP) JLT and silicon-on-insulator (SOI) JLT has also been carried out. The digital parameters analyzed in this work are, on-state drive current ( I ON ), I OFF , I ON / I OFF ratio, static power dissipation ( P STAT ) whereas the analog parameters analyzed includes, transconductance ( G M ), transconductance generation factor ( G M / I DS ), intrinsic gain ( G M R O ) and cut-off frequency ( f T ) of the devices. In addition, scaling behavior of the devices is studied for various channel lengths by using the parameters such as drain induced barrier lowering (DIBL) and sub-threshold swing (SS). It has been found that, the proposed δ-Pi-OXJLT shows significant reduction in I OFF , DIBL and SS over BPJLT and SOIJLT devices. Further, I ON and I ON / I OFF ratio in the case of proposed δ-Pi-OXJLT also improves over the BPJLT device. Furthermore, the improvement in analog figures of merit, G M , G M / I DS , G M R O and f T in the case of proposed δ-Pi-OXJLT clearly shows that the proposed δ-Pi-OXJLT is the promising device for mixed signal integrated circuits. [ABSTRACT FROM AUTHOR]

In this work, comparative analysis of hydrogen(H), hydroxyl (OH), fluorine (F) and chlorine (Cl) edge passivated silicene nanoribbon (SiNR) field effect transistors (FETs) having nanoribbon width of 7 dimers along the armchair direction has been carried out. The ab-initio tight binding simulations of SiNR with different edge passivation uses the multi-scale approach which consists of density functional theory, Wannier function based tight binding and the non-equilibrium Green's Function formalism. It has been found that, the band gap of hydrogen passivated SiNR is comparatively larger than the other edge passivated SiNRs. To choose the optimum number of Wannier functions for tight binding approximations, the contribution of orbitals has also been analyzed. It has been found that, in transport characteristics of X-edge passivated SiNR FETs (X is H, F, Cl and OH), the H-edge passivated SiNR FET shows improved transfer characteristics in comparison to OH, Cl and F–edge passivated SiNR FETs. • Performance analysis of various edge passivated Silicene armchair nanoribbon. • Bandgap of H-passivated SiNR is higher than OH, Cl and F–edge passivated SiNR. • Use of projected density of states to choose the optimum number of Wannier function. • Higher I ON / I OFF in case of H-passivated SiNR FET in comparison other–edge passivated SiNR FET. • Performance of H-passivated SiNR FET is superior among other–edge passivated SiNR FET. [ABSTRACT FROM AUTHOR]