126 results on '"Goano, Michele"'
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2. Reducing inter-pixel crosstalk in HgCdTe detectors
3. Non-Monochromatic 3D Optical Simulation of HgCdTe Focal Plane Arrays
4. Bridging scales in multiphysics VCSEL modeling
5. Simulation of Small-Pitch HgCdTe Photodetectors
6. Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives.
7. Heterostructure modeling considerations for Ge-on-Si waveguide photodetectors
8. Comparing FDTD and Ray-Tracing Models in Numerical Simulation of HgCdTe LWIR Photodetectors
9. Numerical Modeling of SRH and Tunneling Mechanisms in High-Operating-Temperature MWIR HgCdTe Photodetectors
10. Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes
11. Modeling Photocurrent Spectra of Single-Color and Dual-Band HgCdTe Photodetectors: Is 3D Simulation Unavoidable?
12. Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation
13. Calculation of Auger Lifetimes in HgCdTe
14. Full-Band Monte Carlo Simulation of HgCdTe APDs
15. Experimental Electron Mobility in ZnO: A Reassessment Through Monte Carlo Simulation
16. Empirical Pseudopotential and Full-Brillouin-Zone k · p Electronic Structure of CdTe, HgTe, and Hg1−x Cd x Te
17. Ab initio, nonlocal pseudopotential, and full-zone $${k \cdot p}$$ computation of the electronic structure of wurtzite BeO
18. Electron and Hole Transport in Bulk ZnO: A Full Band Monte Carlo Study
19. Fully Numerical Monte Carlo Simulator for Noncubic Symmetry Semiconductors
20. Efficient quasi-TEM frequency-dependent analysis of lossy multiconductor lines through a fast reduced-order FEM model
21. Revisiting the partial-capacitance approach to the analysis of coplanar transmission lines on multilayered substrates
22. Broad-Band Coaxial Directional Couplers for High-Power Applications
23. Analysis and Design of Plasmonic-Organic Hybrid Electro-Optic Modulators Based on Directional Couplers.
24. Organic Electro‐Optic Mach–Zehnder Modulators: From Physics‐Based to System‐Level Modeling.
25. Ab initio, nonlocal pseudopotential, and full-zone k · p computation of the electronic structure of wurtzite BeO
26. Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics.
27. Reduced Dimensionality Multiphysics Model for Efficient VCSEL Optimization.
28. Deriving k∙p parameters from full-Brillouin-zone descriptions: A finite-element envelope function model for quantum-confined wurtzite nanostructures.
29. Reducing inter-pixel crosstalk in HgCdTe detectors.
30. Probing Thermal Effects in VCSELs by Experiment-Driven Multiphysics Modeling.
31. VENUS: A Vertical-Cavity Surface-Emitting Laser Electro-Opto-Thermal NUmerical Simulator.
32. An accurate dual-expansion-point full-Brillouin-zone k·p model for wurtzite semiconductors.
33. Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and ab initio calculations.
34. Alloy scattering in AlGaN and InGaN: A numerical study.
35. Temperature dependence of the impact ionization coefficients in GaAs, cubic SiC, and zinc-blende GaN.
36. Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN.
37. Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part II. Ternary alloys Al[sub x]Ga[sub 1-x]N, In[sub x]Ga[sub 1-x]N, and In[sub x]Al[sub 1-x]N.
38. FDTD simulation of compositionally graded HgCdTe photodetectors.
39. Monte Carlo calculation of the electron capture time in single quantum wells.
40. Numerical evaluation of Auger recombination coefficients in relaxed and strained germanium.
41. Modeling the Conductor Losses of Thick Multiconductor Coplanar Waveguides and Striplines: A Conformal Mapping Approach.
42. Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes.
43. Model for carrier capture time through phonon emission in InGaN/GaN quantum wells.
44. Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective.
45. Saga of efficiency degradation at high injection in InGaN light emitting diodes.
46. Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues.
47. Remark on Algorithm 745
48. Theory of Carriers Transport in III-Nitride Materials: State of the Art and Future Outlook.
49. Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study.
50. Numerical Study of ZnO-Based LEDs.
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