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We propose a new type of magnetoelectric memory device that stores magnetic easy-axis information or pseudo-magnetization, rather than a definite magnetization direction, in magnetoelectrically coupled heterostructures. Theoretically, we show how a piezoelectric/ferromagnetic (PE/FM) combination can lead to non-volatility in pseudo-magnetization exhibiting overall ferroelectric-like behavior. The pseudo-magnetization can be manipulated by extremely low voltages especially when the FM is a low-barrier nano-magnet. Using a circuit model benchmarked against experiments, we determine the switching energy, delay, switching probability and retention time of the envisioned 1T/1C memory device in terms of magnetic and circuit parameters and discuss its thermal stability in terms of a key parameter called back-voltage vm which is an electrical measure of the strain-induced magnetic field. Taking advantage of ferromagnetic resonance measurements, we experimentally extract values for vm in CoFeB films and circular nano-magnets deposited on Pb(Mg1/3Nb2/3)0.7Ti0.3O3 which agree well with the theoretical values. Our experimental findings indeed indicate the feasibility of the proposed novel device and confirm the assumed parameters in our modeling effort. [ABSTRACT FROM AUTHOR]

We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1−xEuxSe, GaAs, and Bi2Se3 substrates. We show that EuSe grows predominantly in the (001) orientation on GaAs(111) and Bi2Se3, but along the (111) crystallographic direction on BaF2 (111) and Pb1−xEuxSe (111). High resolution transmission electron microscopy measurements reveal a sharp and highly crystalline interface for both (001) and (111) EuSe films. In agreement with previous studies, ordered magnetic phases include antiferromagnetic, ferrimagnetic, and ferromagnetic phases. In contrast to previous studies, we found a strong hysteresis of the antiferromagnetic–ferrimagnetic transition. The ability to grow epitaxial films of EuSe on Bi2Se3 and of Bi2Se3 on EuSe enables further investigation of interfacial exchange interactions between various phases of an insulating metamagnetic material and a topological insulator. [ABSTRACT FROM AUTHOR]

Purpose: Demonstrating multifield and inverse contrast switching of magnetocaloric high contrast ratio MRI labels that either have increasing or decreasing moment versus temperature slopes depending on the material at physiological temperatures and different MRI magnetic field strengths. Methods: Two iron‐rhodium samples of different purity (99% and 99.9%) and a lanthanum‐iron‐silicon sample were obtained from commercial vendors. Temperature and magnetic field‐dependent magnetic moment measurements of the samples were performed on a vibrating sample magnetometer. Temperature‐dependent MRI of different iron‐rhodium and lanthanum‐iron‐silicon samples were performed on 3 different MRI scanners at 1 Tesla (T), 4.7T, and 7T. Results: Sharp, first‐order magnetic phase transition of each iron‐rhodium sample at a physiologically relevant temperature (~37°C) but at different MRI magnetic fields (1T, 4.7T, and 7T, depending on the sample) showed clear image contrast changes in temperature‐dependent MRI. Iron‐rhodium and lanthanum‐iron‐silicon samples with sharp, first‐order magnetic phase transitions at the same MRI field of 1T and physiological temperature of 37°C, but with positive and negative slope of magnetization versus temperature, respectively, showed clear inverse contrast image changes. Temperature‐dependent MRI on individual microparticle samples of lanthanum‐iron‐silicon also showed sharp image contrast changes. Conclusion: Magnetocaloric materials of different purity and composition were demonstrated to act as diverse high contrast ratio switchable MRI contrast agents. Thus, we show that a range of magnetocaloric materials can be optimized for unique image contrast response under MRI‐appropriate conditions at physiological temperatures and be controllably switched in situ. [ABSTRACT FROM AUTHOR]

Investigates the resonant magnetization tunneling process involved in the trigonal pyramidal manganese complex. Equation for the complex; Reference to the magnetic properties of single molecule magnets; Indentification of single-molecule magnets; Methods used to conduct studies on single-molecule magnets.

Magnetization measurements of soft-magnetic materials can be affected if they are characterized using a superconducting solenoid. Recording hysteresis loops while stepping the magnetic field can cause an apparently inverted hysteresis, if due to the pinned remanent flux in the magnet the field at the sample location exceeds the sample’s coercive field. Hysteresis loops recorded while sweeping the field can also be affected by ramping rate. The sweeping-rate dependence is caused by leakage currents resulting from the persistent switch and synchronization issues regarding collection of magnetic moment and field data. The resulting errors can be estimated by measuring paramagnetic dysprosium oxide. [ABSTRACT FROM AUTHOR]

Presents information regarding the chemical aspects involving the nanoscale magnets. Identification of fabrication techniques; Verification of macroscopic measurement of a molecular tunneling event; Information on the resonant magnetization tunneling.

Depth profiles for pinned and unpinned magnetizations were determined across the interface between a ferromagnet (F) and random and dilute antiferromagnets (RAF and DAF) exemplified by Fe0.45Ni0.55F2/Co and Fe0.45n0.66F2/Co bilayers, respectively, using polarized neutron reflectivity (PNR). PNR measurements were complemented by magnetometry using applied fields as large as 160 kOe to assure saturation of the entire sample, including magnetic moments that are normally pinned at lower fields. The locations of pinned and unpinned magnetization in the ferro- and antiferromagnets were identified. The origin of exchange bias in the RAF system is noticeably different than that of the DAF system. In the RAF system, a domain wall is formed at the RAF/F interface when the ferromagnet's magnetization is reversed. In the DAF system, some domains within the bulk of the DAF are reversed upon reversal of the ferromagnet while others remain pinned. In this case, the interface magnetization is entirely reversed. [ABSTRACT FROM AUTHOR]

VO 2 has shown great promise for sensors, smart windows, and energy storage devices, because of its drastic semiconductor-to-metal transition (SMT) near 340 K coupled with a structural transition. To push its application toward room-temperature, effective transition temperature ( T c ) tuning in VO 2 is desired. In this study, tailorable SMT characteristics in VO 2 films have been achieved by the electrochemical intercalation of foreign ions (e.g., Li ions). By controlling the relative potential with respect to Li/Li + during the intercalation process, T c of VO 2 can be effectively and systematically tuned in the window from 326.7 to 340.8 K. The effective T c tuning could be attributed to the observed strain and lattice distortion and the change of the charge carrier density in VO 2 introduced by the intercalation process. This demonstration opens up a new approach in tuning the VO 2 phase transition toward room-temperature device applications and enables future real-time phase change property tuning.

Nonconjugated radical polymers (i.e., macromolecules with aliphatic backbones that have stable open-shell sites along their pendant groups) have arisen as an intriguing complement to π-conjugated polymers in organic electronic devices and may prove to have superior properties in magneto-responsive applications. To date, however, the design of nonconjugated radical polymers has primarily focused on linear homopolymer, copolymer, and block polymer motifs even though conjugated dendritic macromolecules (i.e., polyradicals) have shown significant promise in terms of their response under applied magnetic fields. Here, we address this gap in creating a nonconjugated, three-arm radical macromolecule with nitroxide open-shell sites using a straightforward, single-step reaction, and we evaluated the electronic and magnetic properties of this material using a combined computational and experimental approach. The synthetic approach employed resulted in a high-purity macromolecule with a well-defined molecular weight and narrow molecular weight distribution. Moreover, epoxide-based units were implemented in the three-arm radical macromolecule design, and this resulted in a nonlinear radical macromolecule with a low (i.e., below room temperature) glass transition temperature and one that was an amorphous material in the solid state. These properties allowed thin films of the three-arm radical macromolecule to have electrical conductivity values on par with many linear radical polymers previously reported, and our computational efforts suggest the potential of higher generation open-shell dendrimers to achieve advanced electronic and magnetic properties. Importantly, the three-arm radical macromolecule also demonstrated antiferromagnetic exchange coupling between spins at temperatures < 10 K. In this way, this effort puts forward key structure-property relationships in nonlinear radical macromolecules and presents a clear path for the creation of next-generation macromolecules of this type., Competing Interests: The authors declare no competing financial interest., (© 2021 The Authors. Published by American Chemical Society.)