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In many fields, e.g., ground-penetrating radar and ultra-wideband radiation, a high-pulse-repetition-frequency (PRF) and high-time-base-stability sub-nanosecond pulser is required, and its output waveform should be close to a gaussian pulse. In this article, the transistorized pulser is studied and optimized to improve its output parameters. The printed circuit board circuit parameters of the pulser are first optimized, which is beneficial for the amplitude and the rise time. To improve the time base stability, the collector voltage ramp triggering mode is adopted to replace the conventional base triggering mode for the pulser. For higher PRF, the pulser with the capacitance–transistor parallel structure is immersed in the fluorinert liquid. Moreover, the deficit-charge method is adopted, and small charging capacitances are used in the last few stages to weaken the oscillation in the pulse falling edge. From experimental results, the amplitude of the optimized pulser is 1.35 kV, its rise time is reduced from about 200 to 135 ps, the maximum PRF is improved from 250 to 500 kHz, the pulse jitter is reduced to 22 ps, and the pulse drift is reduced from hundreds of ps/min to 47 ps/min. Meanwhile, the oscillation in its falling edge is greatly suppressed. [ABSTRACT FROM AUTHOR]

This paper presents an annular-structure lateral-diffused metal–oxide–semiconductor (LDMOS) RF transistor using a 0.5-\mum LDMOS process. This paper also examines the dc, small-signal, and large-signal characteristics of RF LDMOS transistors with different closed structures. In particular, the problem of evaluating the LDMOS aspect ratio for annular structure is addressed. The capacitance characteristics improvement in the LDMOS device design using the annular structure was also investigated. The power gain and efficiency of annular structure give nearly 5% enhancement compared to the traditional structure with 80-\mum gatewidth at 1.9 GHz. Results show that the annular structure appears to be a better layout design for RF LDMOS transistors. [ABSTRACT FROM AUTHOR]