1. Ballistic performance of FETs based on phosphorene nanoribbons
- Author
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Matić, Mislav and Suligoj, Tomislav
- Subjects
model jake veze ,TEHNIČKE ZNANOSTI. Elektrotehnika ,NEGF ,formalizam Greenovih funkcija izvan ekvilibrija ,phosphorene nanoribbons ,Sancho-Rubio metoda ,non-equilibrium Green's function ,fosforenske nanovrpce ,PNR FET ,top-of-the-barrier model ,TECHNICAL SCIENCES. Electrical Engineering ,model vrha barijere ,Sancho - Rubio method ,tight-binding model - Abstract
U ovom radu opisan je atomistički hamiltonijan i formalizam Greenovih funkcija izvan ekvilibrija za kvantno-transportne simulacije fosforenskih nanovrpci. Implementiran je simulator balističkih karakteristika PNR FET-ova prema modelu vrha barijere. Analizirane su strujno-naponske karakteristike PNR FET-ova u ovisnosti o širini PNR-a te objašnjene dobivene zakonitosti i efekti analizom strukture energijskih vrpci, gustoće stanja i transmisije u PNR-u. Dobiveni rezultati uspoređeni su s zahtjevima IRDS-a za "3 nm" tehnologiju. In this thesis the atomistic Hamiltonian and non-equilibrium Green's function are described for quantum transport simulation of phosphorene nanoribbons(PNR). Simulator of the PNR FET ballistic characteristics has been implemented using top-of-the-barrier (TOB) model. I-V characteristics were analysed in dependence od PNR width.The obtained laws and effects are described with analysis of PNR bandstructure, density of states and transmission. Results have been compared to the requirements of "3 nm" technology provided by IRDS.
- Published
- 2020