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Germanium dioxide was used as the germanium source for the preparation and analysis of semiconductor germanium films on solid and liquid electrodes in an aqueous solution system. XRD and Raman spectra showed that the samples prepared on Cu plates were all amorphous germanium and the deposition temperature and time had a significant effect on the final formation thickness of the germanium films, while a too high deposition temperature may cause cracks in the germanium films during growth. In contrast,crystalline germanium films can be prepared on liquid electrodes at lower temperatures(<90 °C ), and the optimal quality of crystalline germanium films was achieved when the deposition temperature was 80 °C. In addition, XRD results showed that the growth of germanium on the (220) and (311) crystal planes was hindered when the concentration of the germanium source was low(<70 mmol/L). [ABSTRACT FROM AUTHOR]