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Due to their unique physical and chemical properties, wide bandgap semiconductor materials have shown great potential in the field of optoelectronic devices, and have received more and more research and attention. Zinc gallate (ZnGa2O4) is a wide bandgap semiconductor material, showing broad application prospects in the fields of solar-blind ultraviolet photoelectric detection and X-ray detection for its wide bandgap, unique structure and good thermal stability. In this paper, based on the basic structural characteristics of ZnGa2O4, the bandgap, photoelectric properties of ZnGa2 O4, the preparation methods of ZnGa2O4 bulk single crystal and thin film are introduced in detail. Combined with the recent research results of domestic and foreign scholars, the application prospects of ZnGa2 O4 in many fields are summarized, especially the research progress of solar-blind ultraviolet photoelectric detection, memristor, X-ray detection and power devices. Finally, the future development direction of ZnGa2O4 is prospected, and it is pointed out that the quality and performance of ZnGa2O4materials can be further improved to improve device performance and meet higher level application requirements. [ABSTRACT FROM AUTHOR]

Due to their unique physical and chemical properties, wide bandgap semiconductor materials have shown great potential in the field of optoelectronic devices, and have received more and more research and attention. Zinc gallate (ZnGa2O4) is a wide bandgap semiconductor material, showing broad application prospects in the fields of solar-blind ultraviolet photoelectric detection and X-ray detection for its wide bandgap, unique structure and good thermal stability. In this paper, based on the basic structural characteristics of ZnGa2O4, the bandgap, photoelectric properties of ZnGa2 O4, the preparation methods of ZnGa2O4 bulk single crystal and thin film are introduced in detail. Combined with the recent research results of domestic and foreign scholars, the application prospects of ZnGa2 O4 in many fields are summarized, especially the research progress of solar-blind ultraviolet photoelectric detection, memristor, X-ray detection and power devices. Finally, the future development direction of ZnGa2O4 is prospected, and it is pointed out that the quality and performance of ZnGa2O4materials can be further improved to improve device performance and meet higher level application requirements. [ABSTRACT FROM AUTHOR]