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To study the effect of slow thermal annealing treatment on the crystal quality and the luminescence properties of GaAs0.91 Sb0.09 grown by molecular beam epitaxy (MBE), the XRD and variable temperature photoluminescence (PL) spectra have been used to characterize the crystal quality and luminescence properties. By deconvolution of 40 K PL spectra, and the local energy for three GaAs0.91 Sb0.09 samples were 26, 31, and 35 meV, respectively. The results that the As and Sb components of the alloy were interdiffed after annealing treatment, and the local energy of the alloy was deepened at the same time. However, the proportion of local state light emission of GaAs0.91 Sb0.09 was decreased and the ratio of the edge emission was increased by annealing. [ABSTRACT FROM AUTHOR]