1. MOCVD 生长ZnO 薄膜的气相寄生反应路径研究.
- Author
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吴 蕊, 胡 洋, 唐荣芬, 阳 倩, 王 序, 吴怡逸, 聂登攀, and 王环江
- Subjects
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METAL organic chemical vapor deposition , *ZINC oxide films , *QUANTUM chemistry , *CHEMICAL vapor deposition , *THIN films - Abstract
This study utilized density functional theory (DFT) in quantum chemistry to investigate the gas-phase parasitic reaction mechanism between diethylzinc (DEZn) and tert-butanol (t-BuOH) during the metal-organic chemical vapor deposition (MOCVD) growth process of ZnO thin films. By calculating the Gibbs free energy changes along various reaction pathways at different temperatures, a comprehensive thermodynamic evaluation of key intermediates (HOZnOBut, H(ZnO)2 But, HZnOH), as well as the formation of dimers (Zn2 O2 H4, Zn2 O4 H4, Zn4 O4 H4), and trimers (Zn3 O6 H6) was performed. The main objective was to identify potential pathways and products that could lead to the formation of nanoparticles, which might impede ZnO thin film growth. Research has shown that under high-temperature deposition conditions (673.15 K
- Published
- 2024