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Copyright of Larq Journal for Philosophy, Linguistics & Social Sciences is the property of Republic of Iraq Ministry of Higher Education & Scientific Research (MOHESR) and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Copyright of Journal of Historical & Cultural Studies an Academic Magazine is the property of Republic of Iraq Ministry of Higher Education & Scientific Research (MOHESR) and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

The self-heating effects (SHE) in 45nm Silicon-on-Insulator (SOI) and Silicon-on-Diamond (SOD)structures were investigated. As a result of high thermal conductivity of diamond, SHE is much less pronounced in SOD structures. This makes SOD transistors suitable for high power applications were large power density is required. It was shown that in SOD substrate the generated heat in active transistors not only spreads away in the substrate but also transfers to the auxiliary non-active transistors on the same die through the diamond film. Our hydrodynamic simulation results showed 8 times more off-current in auxiliary transistors than SOI substrate. The thermal coupling between the neighboring devices in SOD structures represent device miss-match in analog circuits were high degree of matching is required. [ABSTRACT FROM AUTHOR]