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1. Electrical properties and thermal stability of MBE-grown Al/AlxGa1-xAs/Al(0.25)Ga(0.75)As Schottky barriers

Author

E. Gombia, S. Franchi, Fausto Fantini, S. Naccarella, R. Mosca, Roberto Menozzi, and A. Bosacchi

Subjects
X-ray absorption spectroscopy, Materials science, Annealing (metallurgy), Schottky barrier, Analytical chemistry, Schottky diode, Epitaxy, chemistry.chemical_compound, chemistry, Ternary compound, Electronic engineering, Thermal stability, Electrical and Electronic Engineering, Schottky Aluminium MBE, Molecular beam epitaxy
Abstract

The effects of the Al mole fraction of a thin (4 nm) Al/sub x/Ga/sub 1-x/As cap on the barrier height and the thermal stability of Al/Al/sub x/Ga/sub 1-x/As/Al/sub 0.25/Ga/sub 0.75/As Schottky barriers prepared in situ by MBE have been investigated. The behaviour of the barrier heights and the ideality factors of diodes after annealing up to 435 degrees C are studied.

Published
1994

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