1. Depth profiling of dopants implanted in Si using the synchrotron radiation based high-resolution grazing emission technique
- Author
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Jakub Szlachetko, Yves Kayser, M. Kavčič, Joanna Hoszowska, Dariusz Banaś, Aldona Kubala-Kukuś, Stanisław H. Nowak, Paweł P. Jagodziński, Wei Cao, J.-Cl. Dousse, and M. Pajek
- Subjects
Materials science ,Dopant ,business.industry ,Astrophysics::High Energy Astrophysical Phenomena ,010401 analytical chemistry ,High resolution ,Synchrotron radiation ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Fluorescence ,Synchrotron ,0104 chemical sciences ,law.invention ,Ion ,Optics ,law ,Wafer ,0210 nano-technology ,business ,Spectroscopy ,Excitation - Abstract
We report on the surface-sensitive grazing emission X-ray fluorescence technique combined with synchrotron radiation excitation and high-resolution detection to realize depth-profile measurements of Al-implanted Si wafers. The principles of grazing emission measurements as well as the benefits offered by synchrotron sources and wavelength-dispersive detection setups are presented. It is shown that the depth distribution of implanted ions can be extracted from the dependence of the X-ray fluorescence intensity on the grazing emission angle with nanometer-scale precision provided that an analytical function describing the shape of the depth distribution is assumed beforehand. If no a priori assumption is made, except a bell shaped form for the dopant distribution, the profile derived from the measured angular distribution is found to reproduce quite satisfactorily the depth distribution of the implanted ions. Copyright © 2012 John Wiley & Sons, Ltd.
- Published
- 2012
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