1. Sulfide pretreatment effects of liquid phase deposited TiO2 on AlGaAs and its application
- Author
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Tai Lung Lee, Kuan Wei Lee, Yong Jie Zou, Yeong-Her Wang, and Jung Sheng Huang
- Subjects
chemistry.chemical_classification ,Materials science ,Sulfide ,Transistor ,Analytical chemistry ,chemistry.chemical_element ,Condensed Matter Physics ,Surfaces, Coatings and Films ,Gallium arsenide ,law.invention ,chemistry.chemical_compound ,chemistry ,Aluminium ,law ,Electric field ,Titanium dioxide ,Surface roughness ,Instrumentation ,Deposition (law) - Abstract
The study explored titanium dioxide (TiO 2 ) prepared by liquid phase deposition (LPD) deposited on (NH 4 ) 2 S x -treated aluminum gallium arsenide (AlGaAs), including the surface roughness by using atomic force microscopy (AFM) measurements and electrical properties. The leakage current density of MOS capacitor is approximately 6.83 × 10 −7 A/cm 2 at zero electric field for the sample without any pretreatment. The interface trap density ( D it ) and the flat-band voltage shift (Δ V FB ) are 4.46 × 10 12 cm −2 eV −1 and 3.6 V, respectively. After the 10 min 5% (NH 4 ) 2 S x pretreatment, the leakage current density, D it , and Δ V FB can be improved to 1.04 × 10 −7 A/cm 2 at zero electric field, 2.28 × 10 12 cm −2 eV −1 , and 2 V, respectively. The paper also demonstrates the application to the AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) using LPD-TiO 2 after 10 min sulfide pretreatment.
- Published
- 2015