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Thin films of high-quality polycrystalline silicon (poly Si) on different substrates are of interest for manufacturing thin film transistors, solar cells, and image sensors. In this study, we present the results of an investigation of poly Si films on glass, formed by nickel-induced crystallization. The process is based on isothermal annealing in air at 550 and 560 °C of co-sputtered Ni+Si films deposited on glass at different substrate temperatures, with and without the application of an electric field to the films. The poly Si films were investigated by Raman spectroscopy and Rutherford back-scattering. It was established that the substrate temperature and the Ni-concentration in the precursor amorphous Si+Ni films are important parameters for nickel-induced crystallization.

Thin films (d∼200 nm) of hydrogenated amorphous silicon carbide (a-SiC:H), deposited by RF reactive magnetron sputtering, have been ion implanted with high doses (D=1016–1017 cm−2) of Ga+ as the implant species. The increased disorder and additional structural modification of a-SiC:H, induced by the implantation of Ga+, results in a considerable change of the optical properties, best manifested by a significant shift of the optical absorption edge to lower photon energies in the results obtained by optical transmission and reflection measurements and as derived from photo-thermal-deflection spectroscopy results. This shift may be attributed both to additional defect introduction and to accompanying structural modification effects, as confirmed by optical absorption measurements in the infra-red region and by Raman spectroscopy results.

a-Si 1− x C x :H thin films doped with different concentrations of Tb have been deposited by magnetron co-sputtering. The carbon content in the films is varied in order to change the optical gap. RBS analysis shows that Tb is homogeneously distributed in the bulk. Optical absorption spectra in the visible are studied and changes in the optical gap and the defect absorption with increasing Tb concentration are observed. The laser excited photoluminescence (PL) of the films is studied after annealing at 300°C in Ar atmosphere. It consists of a broad band covering the whole visible spectrum. The position of the PL band does not change when the carbon content in the films is increased from 10 to 25 at%. It is tentatively assigned to the Tb 3+ impurity.

Ag nanoclusters in a SiO2 matrix prepared by RF magnetron co-sputtering and subsequent irradiation with heavy 4.5 MeV Au+ ions were formed. The refractive index and optical absorption spectra of the films were studied. The method of the disappearing diffraction pattern was used for the refractive index determination. The refractive index enhances with increasing Ag concentration, as expected from the light scattering theory. SiO2:Ag thin films exhibit a plasmon resonance in the visible region. In the as-deposited films the Ag nanoclusters are less than 1 nm and are formed during the deposition. The intensity of the plasmon peak is low. After irradiation with 4.5 MeV Au+ ions the intensity of the peak increases and the peak becomes narrower. The TEM study shows that this is related to the change in the size of the Ag nanoclusters.

A correlation between the photoluminescence, chemical bonds and structure of c-Si subjected to electrochemical and laser induced chemical etching has been obtained by X-ray photoelectron spectroscopy, IR spectroscopy and Raman scattering. Photoluminescence is very strongly related to the chemical bonding and depends on the Si, O and C content and the presence of different oxidized states of Si which are different for porous silicon prepared on Si substrates of different electrical resistivity. Porous silicon having Si oxidized states typical for Si suboxides exhibits very intensive photoluminescence. The influence of the doping level of c-Si on the process of electrochemical etching as well as the influence of the laser power on the process of stain etching are discussed.