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The theoretical possibility to use an electron microscope as a spin polarizer is studied. It turns out that a Bessel beam passing a standard magnetic objective lens is intrinsically spin polarized when post-selected on-axis. In the limit of infinitely small detectors, the spin polarisation tends to 100%. Increasing the detector size, the polarisation decreases rapidly, dropping below 10-4 for standard settings of medium voltage microscopes. For extremely low voltages, the Figure of Merit increases by two orders of magnitude, approaching that of existing Mott detectors. Our findings may lead to new desings of spin filters, an attractive option in view of its inherent combination with the electron microscope, especially at low voltage.

The propagation of an electron beam in the presence of transverse magnetic fields possessing integer topological charges is presented. The spin-magnetic interaction introduces a nonuniform spin precession of the electrons that gains a space-variant geometrical phase in the transverse plane proportional to the field's topological charge, whose handedness depends on the input electron's spin state. A combination of our proposed device with an electron orbital angular momentum sorter can be utilized as a spin-filter of electron beams in a mid-energy range. We examine these two different configurations of a partial spin-filter generator numerically. The results of this analysis could prove useful in the design of an improved electron microscope. © 2013 Elsevier B.V.

This paper reports on a novel approach to quantitatively reconstruct the column by column composition and the 3D distribution of guest atoms inside a host matrix by scanning transmission electron microscopy high angle annular dark field technique. We propose a new mathematical framework that allows to jointly analyze the information from a set of experiments with variable beam convergence and/or defocus. Our scheme allows to reconstruct the atomic distribution along the imaged columns from the measured intensity, for any dependence of the probe intensity on the depth. It is therefore well suited to incorporate channeling effects that are usually neglected in other approaches. As a case study, we focus here on the systematic variation of the beam convergence that permits to set the maximum of the channeling oscillations at different depths. We aim here to define the reliability and the limitation of this technique by the application of the method to accurate dynamic simulations in the case of the InGaN alloy. © 2014 Elsevier B.V.

Modern nanotechnology tools allowed us to prepare slits of 90 nm width and 450 nm spacing in a screen almost completely opaque to 200 keV electrons. Then by covering both slits with a layer of amorphous material and carrying out the experiment in a conventional transmission electron microscope equipped with an energy filter we can demonstrate that the diffraction pattern, taken by selecting the elastically scattered electrons, shows the presence of interference fringes, but with a bimodal envelope which can be accounted for by taking into account the non-constant thickness of the deposited layer. However, the intensity of the inelastically scattered electrons in the diffraction plane is very broad and at the limit of detectability. Therefore the experiment was repeated using an aluminum film and a microscope also equipped with a Schottky field emission gun. It was thus possible to observe also the image due to the inelastically scattered electron, which does not show interference phenomena both in the Fraunhofer or Fresnel regimes. If we assume that inelastic scattering through the thin layer covering the slits provides the dissipative process of interaction responsible for the localization mechanism, then these experiments can be considered a variant of the Feynman which-way thought experiment. (C) 2015 Elsevier B.V. All rights reserved.

The software STEM_CELL, here presented, is a useful tool for (S) TEM simulation. In particular innovative solutions are presented in (1) the supercell manipulation and parameters setting (2) simulation execution through the modified Kirkland routines (3) simulation post-processing with extended output and comprehensive graphic tools (4) image contrast interpretation through a strain channeling equation accounting for strain effects in STEM-ADF.

In this work the effects of strain on high-angle annular dark field (HAADF) images taken in zone axis conditions have been quantitatively studied. In particular, the presence of dark contrast zones in experimental HAADF images of InGaAs-GaAs interfaces is here interpreted in terms of strain relaxation at the surface. The consistence of this assumption is demonstrated by means of experiments and simulations performed for different In compositions, specimen tilt and thickness conditions. It is shown how the HAADF contrast mechanism is related to the bending of the lattice planes in the first surface region. Finally, a generalization of the 1s approximation that is able to qualitatively describe the effect of strain on HAADF images is presented.