1. Fabrication of SiC Ceramic Bonded Carbon and Its Joining with W
- Author
-
Chen, Weiwu and Miyamoto, Yoshinari
- Subjects
Silicon carbide ,Joining ,Ceramic bonded carbon ,Tungsten - Abstract
To obtain light and tough ceramic bonded carbon (CBC) materials with high thermal conductivity SiC Ceramic bonded carbon (SiC/CBC) is developed using Si_3N_4 and carbon powders (30:70 in volume ratio) and sintering by spark plasma sintering at temperatures of 1900℃. The SiC/CBC were highly dense (98% theoretical density), lightweight (2.42 Mg/m³), and had both relatively high bending strength and thermal conductivity (150 MPa and 138 W/mK, respectively). Moreover, the SiC/CBC could be joined tightly with W. The joints of SiC/CBC and W may be used as heat-sinks for W-based plasma facing components. The joining strength between W and SiC/CBC was 33 MPa when measured by a tensile test and 90 MPa by a bending test.
- Published
- 2012