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This study revealed the band gap, visible transmittance, and crystallinity variation Cd 1 − x S:B emitter layer at different boron concentrations, as well as the CuInSe 2 absorption layer nucleation mechanism at pH values ranging from 1.53 to 2.13. CuInSe 2 deposited at a pH of 1.73 showed the highest grain size (24.29 nm) and approached the stoichiometric state of [Cu]/[In] = 0.98, which produced was used for solar cells and Schottky diode. The conversion efficiency of Al/AZO/Cd 1 − x S:B/CuInSe 2 /Mo/Glass structure cell was 2.37% (V oc : 293 mV, J sc : 26.85 mA/cm 2 , and FF: 0.301). Moreover, the aluminum material were deposited on CuInSe 2 as a Schottky diode (Al/CuInSe 2 /Mo/Glass), which diode was used to estimate the work function (Φ) and ideality factor (n) through Schottky barrier. These device parameters of Al/CuInSe 2 structure was Φ CuInSe2 = 4.791 eV and n = 3.52, respectively. This result revealed that the Cd 1 − x S:B/CuInSe 2 interface state can cause Fermi-level pinning with an interface recombination velocity of 2.328 × 10 3 cm s − 1 . This indicates the poor performance of Schottky diodes and thin film solar cells comprising Cd 1 − x S:B/CuInSe 2 . However, experimental results demonstrated that the passivation of the surface by using iodine treatment can improve the Fermi-level pinning effect on Cd 1 − x S:B/CuInSe 2 interfaces. [ABSTRACT FROM AUTHOR]