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Your search keyword '"Sze, Simon"' showing total 16 results
Start Over Author "Sze, Simon" Journal thin solid films
16 results on '"Sze, Simon"'

15. Influence of forming process on resistance switching characteristics of In2O3/SiO2 bi-layer

Author

Huang, Jheng-Jie, Chang, Ting-Chang, Yang, Po-Chun, Chen, Yu-Ting, Tseng, Hsueh-Chih, Yang, Jyun-Bao, Sze, Simon M., Chu, Ann-Kuo, and Tsai, Ming-Jinn

Subjects
*SILICA, *SWITCHING theory, *INDIUM compounds, *MICROFABRICATION, *ELECTRIC resistance, *RANDOM access memory, *CRYSTAL structure
Abstract

Abstract: In this study, we fabricated and analyzed resistance switching characteristics for resistance random access memory (RRAM) in a Pt/In2O3/SiO2/TiN structure. By applying opposing electric fields to perform a soft breakdown of the In2O3/SiO2 insulating bi-layer, different switching behaviors are exhibited. When positive forming voltage was applied to the TiN electrode to soft breakdown the device, the resistance switching behavior was dominated by the bipolar mode. However, the negative voltage forming process exhibited both unipolar switching characteristics in addition to a bipolar switch mode. In order to analyze the composition of the conduction path and resistance switching mechanism, resistance value trends versus temperature was extracted and showed that the conduction paths of bipolar and unipolar modes are dominated by oxygen vacancies and metallic filament, respectively. Hence, metallic filament was considered to be formed by the migration of indium ions because the unipolar characteristic was only present during negative bias forming condition. [Copyright &y& Elsevier]

Published
2013
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16. Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N2 and O2 ambient

Author

Hu, Chih-Wei, Chang, Ting-Chang, Tu, Chun-Hao, Chiang, Cheng-Neng, Lin, Chao-Cheng, Chen, Min-Chen, Chang, Chun-Yen, Sze, Simon M., and Tseng, Tseung-Yuen

Subjects
*NANOCRYSTALS, *SILICIDES, *NICKEL compounds, *GERMANIUM, *ELECTRIC properties of thin films, *ANNEALING of crystals, *FERROELECTRIC RAM, *NITROGEN
Abstract

Abstract: In this work, electrical characteristics of the Ge-incorporated Nickel silicide (NiSiGe) nanocrystals memory device formed by the rapidly thermal annealing in N2 and O2 ambient have been studied. The trapping layer was deposited by co-sputtering the NiSi2 and Ge, simultaneously. Transmission electron microscope results indicate that the NiSiGe nanocrystals were formed obviously in both the samples. The memory devices show obvious charge-storage ability under capacitance–voltage measurement. However, it is found that the NiSiGe nanocrystals device formed by annealing in N2 ambient has smaller memory window and better retention characteristics than in O2 ambient. Then, related material analyses were used to confirm that the oxidized Ge elements affect the charge-storage sites and the electrical performance of the NCs memory. [Copyright &y& Elsevier]

Published
2010
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