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Abstract: Inverse spinel zinc stannate (Zn2SnO4, ZTO) films were deposited onto fused quartz glass substrates heated at 800 °C by rf magnetron sputtering using a ceramic ZTO target (Zn:Sn=2:1). H2 flow ratios [H2/(Ar+H2)] were controlled from 0 to 30% during the depositions. ZTO films deposited at 800 °C possessed a polycrystalline inverse spinel structure. The lowest resistivity of 1.1×10− 2 Ω cm was obtained for a ZTO film deposited at 20% H2 flow ratio. The transmittance of the ZTO film was approximately 80% in the visible region. [Copyright &y& Elsevier]

Abstract: Effects of the substrate temperature on early stages of film growth were investigated for tin-doped indium oxide (ITO) films deposited on alkali-free glass substrates by dc magnetron sputtering. The variations in sheet resistance, film coverage and average surface roughness showed clearly that ITO films deposited on the unheated glass (lower than 50 °C) formed by a Volmer–Weber growth mode. In contrast, such an island structure was not clearly observed for films deposited on glass substrates heated at 100, 200 and 400 °C, resulting in better film coverage. These results indicate that the nucleation densities of ITO films increase dramatically with increasing substrate temperature. [Copyright &y& Elsevier]

Abstract: Amorphous indium–gallium–zinc–oxide (a-IGZO) films were deposited by dc magnetron sputtering with H2O introduction and how the H2O partial pressure (PH2O) during the deposition affects the electrical properties of the films was investigated in detail. Resistivity of the a-IGZO films increased dramatically to over 2×105 Ωcm with increasing PH 2 O to 2.7×10−2 Pa while the hydrogen concentration in the films increased to 2.0×1021 cm−3. TFTs using a-IGZO channels deposited under PH 2 O at 1.6–8.6×10−2 Pa exhibited a field-effect mobility of 1.4–3.0cm2/Vs, subthreshold swing of 1.0–1.6V/decade and on–off current ratio of 3.9×107–1.0×108. [Copyright &y& Elsevier]