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Reaktivní magnetronové naprašování s hlubokými oscilacemi, pulzní kontrolou toku reaktivního plynu a vstupem reaktivního plynu, orientovaným k substrátu a umístěným v zóně hustého plazmatu před Mo terčem, bylo použito pro nízkoteplotní (< 120 °C) přípravu vrstev MoOx a MoOxNy s 2,5 < x < 3,0 a y < 0,2. Vysvětlujeme výhody použité depoziční techniky umožňující hladkou a reprodukovatelnou kontrolu složení vrstev a tím i jejich struktury a vlastností. Speciální pozornost věnujeme silnému dopadu malého snížení x ve vrstvách MoOx a malého zvýšení y ve vrstvách MoOxNy na jejich optické a elektrické vlastnosti, které přímo souvisí s proměnnou elektronovou strukturou těchto vrstev. Diskutujeme možné aplikace těchto vrstev v oblasti solárních článků, organické elektroniky a lithium-iontových baterií. Reactive deep oscillation magnetron sputtering with a pulsed reactive gas flow control and to-substrate reactive gas injection into the high-density plasma in front of the sputtered Mo target was used for a low-temperature (< 120 °C) preparation of MoOx and MoOxNy films with 2.5 < x < 3.0 and y < 0.2. We explain the advantages of this deposition technique, allowing us to control smoothly and reproducibly the film composition and thus the film structure and properties. Special attention is paid to the strong effect of slightly decreasing x in MoOx films and slightly increasing y in MoOxNy films on their optical and electrical properties which are directly related to varying electronic structure of the films. We discuss possible applications of these films in the field of solar cells, organic electronic devices and lithium-ion batteries.

The density ratio of negative ions to positive ions α in a SF6/Ar double plasma, O2/Ar, CF4/Ar and C4F8/Ar electron cyclotron resonance (ECR) plasmas were estimated using the propagation characteristics of the ion acoustic waves (fast mode). Here, the phase velocity of the fast mode in a double plasma and an ECR plasma were measured with the interferometric method and the time of flight method, respectively. As a result, it was found that α was more than 0.9 in the SF6/Ar double plasma, and less than 0.5, 0.3 and 0.4 in the O2/Ar, CF4/Ar and C4F8/Ar ECR plasma, respectively. Furthermore, it was observed that α has a large value in the lower gas mixture rate region in the case of ECR plasmas.

A time-dependent simulation model of reactive sputtering is proposed. The model deals with time-dependent poisoning of the target surface and hysteresis phenomena. The model is based on the calculation of the time-dependent change in gettering pumping speed and target poisoning speed, yielding the time-dependent change in target coverage and reactive gas partial pressure. By calculating the equilibrium values of the time-dependent change over a range of reactive gas flow rates, hysteresis effects of target coverage and reactive gas partial pressure are investigated as a function of the gas flow rate. The hysteresis results obtained suggest that with the time-dependent model it is possible to evaluate the effect of pumping speed on the transition points and width of hysteresis curves. As compared with experimentally investigated results it is found that the model explains mechanisms of reactive sputtering qualitively.

The technique of reactive d.c. plasmatron sputtering with elemental targets is characterized by strong interactions of the reactive gas with the target surface and with the condensing target material. These interactions have a marked influence on the current-voltage (I-U) behaviour of the gas discharge which can be used to control the film deposition process in both the single-target mode and in cosputtering. Model calculations of I-U characteristics are carried out for single and multiple targets of silicon and titanium. On the basis of the formula derived it is possible to predict the influence of the process parameters (pressure, deposition rate, target area etc.) on the I-U curves as well as the interactions of various targets. The calculations agree qualitatively with the measured I-U characteristics. Experiments were carried out with silicon and titanium targets in Ar-O2 mixtures.

The photoinduced instability of silver in a heat mirror coating consisting of silver and dielectric multilayers is explained and characterized. In the presence of a reactive gas, silver atoms appear to migrate to the surface by penetrating through the top dielectric layer. This tendency is enhanced by photoexcitation. The spectral factors responsible for this phenomenon are discussed.

A study was initiated on the behaviour of the total pressure during the sputtering process for a d.c. triode sputtering system. The variations in the total pressure are readily attributed to variations in the reactive gas concentration. Experimental evidence is presented to support a model in which the abrupt increase in the deposition rate of films during the reactive sputtering of metals is related to a chemical reaction of the sputtered atoms with the reactive gas.