1. The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures
- Author
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Hellings, Geert, Hikavyy, Andriy, Mitard, Jerome, Witters, Liesbeth, Benbakhti, Brahim, Alian, AliReza, Waldron, Niamh, Bender, Hugo, Eneman, Geert, Krom, Raymond, Schulze, Andreas, Vandervorst, Wilfried, Loo, Roger, Heyns, Marc, Meuris, Marc, Hoffmann, Thomas, and De Meyer, Kristin
- Subjects
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QUANTUM wells , *METAL oxide semiconductor field-effect transistors , *HETEROSTRUCTURES , *ELECTRIC charge , *GATE array circuits , *ELECTRIC potential , *SEMICONDUCTOR doping - Abstract
Abstract: The Implant-Free Quantum Well Field-Effect Transistor (FET) offers enhanced scalability in a planar architecture through the integration of heterostructures. The Implant-Free architecture fully utilizes the band offsets between different materials, whereby charge carriers are effectively confined to a thin channel layer. This prevents sub-surface source/drain leakage observed in classical bulk Metal-Oxide-Semiconductor FETs at small gate lengths. An investigation of the VT-tuning capabilities of this technology reveals sensitivity to both well doping and bulk voltage. [Copyright &y& Elsevier]
- Published
- 2012
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