Search

Your search keyword '"M. Ahmetoglu"' showing total 3 results
Start Over Author "M. Ahmetoglu" Journal thin solid films
3 results on '"M. Ahmetoglu"'

2. Photoelectrical characteristics of GaSb/GaInAsSb/GaAlAsSb heterojunction photodiodes under illumination by photons with wavelength of 0.95–1.0μm

Author

M. Ahmetoglu Afrailov, Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü., and Afrailov, Muhitdin Ahmetoğlu

Subjects
Type II heterojunctions, Open circuit voltage, III-V semiconductors, Photon, Materials science, Light, Dark currents, Type II, law.invention, Incident light, Optics, law, Band alignments, Materials Chemistry, Photovoltaic modes, Physics, condensed matter, Room temperature, Physics, applied, Liquid phase epitaxy, business.industry, Open-circuit voltage, Physics, Heterojunction photodiodes, Photovoltaic system, Metals and Alloys, Heterojunction, Surfaces and Interfaces, Ray, Materials science, multidisciplinary, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Photodiode, Wavelength, Photovoltaic characteristics, Current voltage characteristics, Semiconductor Quantum Wells, Heterostructures, Photodiodes, Photovoltaic effects, Heterojunctions, Type II heterojunction, Optoelectronics, Materials science, coatings & films, business, Spectral range, Band alignment, Dark current
Abstract

The photovoltaic characteristics of a type II staggered heterojunction in the GaSb/GaInAsSb/GaAlAsSb system were studied. The dark current and R 0 A product were investigated at different temperatures. The current–voltage characteristics of n -GaSb/ n -GaInAsSb/ p -GaAlAsSb heterostructures were investigated at room temperature in the photovoltaic mode under illumination by light with wavelength of 0.95–1.0 μm and different intensities. A short-circuit current and an open circuit voltage as a function of intensity of incident light in photovoltaic mode were studied.

Published
2012

3. Electrical transport at a isotype type II heterojunctions in the system of GaSb-GaInAsSb

Author

M. Ahmetoglu

Subjects
Condensed matter physics, Chemistry, Metals and Alloys, Schottky diode, Heterojunction, Surfaces and Interfaces, Atmospheric temperature range, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Epitaxy, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Condensed Matter::Materials Science, Tunnel effect, Rectification, Materials Chemistry, Mathematics::Representation Theory, Quantum tunnelling, Dark current
Abstract

Current flow mechanisms have been studied for liquid phase epitaxy grown isotype heterostructures lattice-matched to GaSb substrates. The dark current mechanisms in the N-n isotype heterostructures were investigated in detail at several temperatures. It is shown that both the type II staggered and misaligned heterojunctions can behave as Schottky diodes and the dark current–voltage characteristics of this isotype hetero-structures were rectifying over the whole temperature range 90–300 K. These measurements establish that the reverse current in both (staggered and misaligned) investigated structures are determined mainly by tunneling mechanism. The theoretical relations for reverse dark current in staggered lineup isotype heterostructures have been developed.

Published
2008

Catalog

Books, media, physical & digital resources
See catalog results