1. The mechanism of cubic boron nitride deposition in hydrogen plasmas
- Author
-
E Räuchle, Fritz Aldinger, I. Konyashin, Babaev Vladimir G, V. V. Khvostov, K.-M Baumgärtner, Guseva Malvina B, and A. Bregadze
- Subjects
Materials science ,Hydrogen ,Inorganic chemistry ,Metals and Alloys ,Nucleation ,chemistry.chemical_element ,Surfaces and Interfaces ,Nitride ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Ion ,chemistry.chemical_compound ,Chemical engineering ,chemistry ,Boron nitride ,Etching (microfabrication) ,Materials Chemistry ,Deposition (phase transition) ,Boron - Abstract
Deposition of cubic boron nitride in hydrogen plasma is thought to proceed as a result of selective etching of sp2-hybridized boron nitride from the surface of the growing boron nitride film, the impact of hydrogen atoms or ions leading to formation of c-BN sp3 bonds on the surface and formation of metastable BNHx species in the gas phase. The mechanism of nucleation and growth of c-BN crystals in hydrogen plasmas is proposed.
- Published
- 1999