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Start Over Publication Year Range More than 50 years ago Journal thin solid films
308 results

1. Thin films for pulsed electron-beam thermal non-impact printing

Author

Alfredo Olivei

Subjects
Materials science, Metals and Alloys, chemistry.chemical_element, Surfaces and Interfaces, Thermal paper, Copper, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Condensed Matter::Soft Condensed Matter, Matrix (mathematics), chemistry, Thermal, Materials Chemistry, Cathode ray, Thin film, Composite material, Platinum, Thermal printing
Abstract

A thermal printing matrix head, consisting essentially of a suitable combination of two adjacent thin film materials, is described for use in a pulsed electronbeam thermal non-impact printing system. The printing matrix is a sheet of fused silica glass; on the surface facing the vacuum is a target formed by thin film elements of platinum silicides, and on the surface facing the ambient atmosphere is a writing matrix formed by elements of copper diffused in the silica glass. The inner surfaces of the elements of the writing matrix contact the corresponding ele elements of the target matrix, while the outward surfaces contact the thermal paper, placed in ambient atmosphere.

Published
1972
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2. Electrical properties of silicon oxide/boric oxide co-evaporated films

Author

C.A. Hogarth and P.A. Timson

Subjects
Materials science, Metals and Alloys, Oxide, Equivalent oxide thickness, Surfaces and Interfaces, Oxide thin-film transistor, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, Chemical engineering, chemistry, Materials Chemistry, Silicon oxide, Graphene oxide paper
Published
1972
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3. Low temperature formation of silicon oxide

Author

William B. Glendinning and David W. Yarbrough

Subjects
Materials science, Inorganic chemistry, Metals and Alloys, Nanocrystalline silicon, Equivalent oxide thickness, Surfaces and Interfaces, Oxide thin-film transistor, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Materials Chemistry, LOCOS, Silicon oxide, Buffered oxide etch, Graphene oxide paper
Abstract

Silicon oxide films have been formed at temperatures as low as 25°C, using a reaction of Si with a vapor mixture containing either NO, HF and H 2 O or NO, HF, H 2 O and O 2 . Experimental data relating silicon oxide film growth with processing parameters such as vapor composition, temperature and time are presented. Conditions for the growth of silicon oxide films of specific thicknesses are outlined.

Published
1973
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4. The conduction process in silicon oxide

Author

P.A. Timson and P. Wickens

Subjects
Materials science, business.industry, Metals and Alloys, Equivalent oxide thickness, Surfaces and Interfaces, Substrate (electronics), Oxide thin-film transistor, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Monocrystalline silicon, Gate oxide, Materials Chemistry, Optoelectronics, LOCOS, business, Silicon oxide, Graphene oxide paper
Published
1970
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5. A plasma source for the production of thin oxide films

Author

Michel Hecq and J. Van Cakenberghe

Subjects
Materials science, Inorganic chemistry, technology, industry, and agriculture, Metals and Alloys, chemistry.chemical_element, Equivalent oxide thickness, Surfaces and Interfaces, Substrate (electronics), Zinc, equipment and supplies, Oxide thin-film transistor, Tin oxide, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, Materials Chemistry, Thin film, Silicon oxide, Graphene oxide paper
Abstract

This method uses an induced plasma contained in a cavity made from the material to be deposited. Oxygen pressure in the cavity is higher than in the vacuum system. The film is deposited on a substrate opposite to an opening in the cavity. Thin films of silicon oxide, tin oxide, zinc oxide and chromium oxide have been prepared.

Published
1972
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