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Silicon carbide (SiC) attracts a lot of attention for several useful applications such as semiconductor devices and structural materials under severe conditions because of its outstanding electronic properties as well as high physical and chemical stabilities. However, it is difficult to fabricate meso- and macropores in SiC because of its inertness. In this study, macroporous SiC with a pore size of several micrometers was fabricated by anodizing SiC with point defects which were formed by high-energy Si(II) ion irradiation. This is because irradiated SiC has an electrochemical activity caused by the combination of irradiation-induced defects and dopants. This result suggests that the control of lattice defects is a promising strategy for the surface processing of SiC. We propose that this study gives a new prospect of the electrochemical activation of SiC and opens various fields of its application.

The aim of this work is to clarify how in-plane magnetic anisotropy and magnetoelasticity depend on the thickness of Ga-rich FeGa layers. Samples with an Fe72Ga28composition were grown by sputtering in the ballistic regime in oblique incidence. Although for these growth conditions uniaxial magnetic anisotropy could be expected, in-plane anisotropy is only present when the sample thickness is above 100 nm. By means of differential X-ray absorption spectroscopy, we have determined the influence of both Ga pairs and tetragonal cell distortion on the evolution of the magnetic anisotropy with the increase of FeGa thickness. On the other hand, we have used the cantilever beam technique with capacitive detection to also determine the evolution of the magnetoelastic parameters with the thickness increase. In this case, experimental results can be understood considering the grain distribution. Therefore, the different physical origins for anisotropy and magnetoelasticity open up the possibility to independently tune these two characteristics in Ga-rich FeGa films.

We have investigated the influence of the growth power on the structural properties of Fe100–xGax(xca. 29) films sputtered in the ballistic regime in the oblique incidence. By means of different structural characterizations, mainly X-ray diffraction and X-ray absorption spectroscopy, we have reached a deeper understanding about the influence of the local and medium range order on the magnetic behavior of Ga-rich FeGa thin films. On the one hand, the increase of the growth power reduces the crystallite size (medium order) that promotes the decrease of the coercive field of the layers. On the other hand, the growth power also determines the local order as it controls the formation of the A2, B2, and D03structural phases. The increase of the uniaxial in-plane magnetic anisotropy with growth power has been correlated with the enhancement of both Ga pairs and a tetragonal distortion. The results presented in this work give more evidence about the magnetic anisotropy sources in Ga-rich FeGa alloys, and therefore, it helps to understand how to achieve a better control of the magnetic properties in this family of alloys.

Nowadays, iron oxide-based nanostructures are key materials in many technological areas. Their physical and chemical properties can be tailored by tuning the morphology. In particular, the possibility of increasing the specific surface area has turned iron oxide nanowires (NWs) into promising functional materials in many applications. Among the different possible iron oxide NWs that can be fabricated, maghemite/hematite iron oxide core/shell structures have particular importance since they combine the magnetism of the inner maghemite core with the interesting properties of hematite in different technological fields ranging from green energy to biomedical applications. However, the study of these iron oxide structures is normally difficult due to the structural and chemical similarities between both iron oxide polymorphs. In this work, we propose a route for the synthesis of maghemite/hematite NWs based on the thermal oxidation of previously electrodeposited iron NWs. A detailed spectroscopic analysis based on Raman, Mössbauer, and X-ray absorption shows that the ratio of both oxides can be controlled during fabrication. Transmission electron microscopy has been used to check the core/shell structure of the NWs. The biocompatibility and capability of internalization of these NWs have also been proven to show the potential of these NWs in biomedical applications.

Recent studies have revealed that electrochemistry at the nanometer scale is profoundly different from its conventional framework. We reported that the combination of a hydrophobic nanoporous electrode and low-charge-density metal ions resulted in a drastic acceleration in the electrodeposition reaction. In the present study, we analyzed Zn embedded in nanoporous silicon by X-ray absorption fine structure spectroscopy. As a precursor to Zn electrodeposition, Zn(II) chelate was used under different pH conditions. The spectroscopy results clearly suggest that the accumulation of Zn(II) chelate occurred at pH conditions where the Zn(II) chelate had zero charge. The accumulation resulted in the promotion of Zn electrodeposition within confined nanopores. Based on this spectroscopic investigation, we propose a model for the accelerated electrodeposition of Zn in confined nanopores.

We present structural, electronic, and morphological characterization of thin (7.5 nm, 9 unit cells) and ultrathin (1.7 nm, 2 unit cells) Fe3O4layers grown on SrTiO3(001) by oxygen assisted molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) methods. The analysis show single-phase single oriented (001) layers that grow forming a coincidence lattice of the order 13. Such an incommensurate growth is present for all the layers, independent of the evaporation method and layer thickness. The magnetite layers, which are strain-free, provide a sharp interface with the substrate. The films grown by the MBE method present negligible interaction with the substrate and smooth surfaces. The films grown by the PLD evaporation method present an expansion of the last atomic layer of the substrate and rough layer surface. However, the obtained structural domain size of 10 nm is identical for the layers grown by both evaporation techniques corresponding to the size of the coincidence lattice. We determine that the magnetic and transport properties inherent to the Fe3O4/STO heterostructure are not related to the lattice strain but to the formation of antiphase boundary defects.

Cu–porous silicon (Cu–PS) composite materials consisting of nanosized Cu clusters preferentially grown on the surface of PS were fabricated by photoassisted deposition of Cu nanoparticles onto PS. Structural and chemical characterization of the Cu particles grown in the PS matrix has been carried out by synchrotron X-ray absorption spectroscopy, from which different reaction stages have been identified within the photoassisted reaction. In particular, it was found that the reduction of Cu occurs in three main phases: (a) Cu nucleates homogeneously in a few seconds over the surface of PS by a coupled red-ox reaction; (b) clusters grow by new reduced ions, which tend to oxidize the previously deposited Cu atoms making increasingly heterogeneous Cu clusters; and (c) a competitive process between nucleation of new clusters and cluster coalescence gives rise to a bulklike Cu thin film. It was determined that the structures formed in the first two phases display surface plasmon resonance, with band intensity and broadening consistent with the increasing heterogeneity of the clusters. The growth kinetics has been fitted to a Langmuir–Hill model. Following these results, a reaction model has been proposed to explain the mechanisms involved in the first stages of Cu clustering.