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GaN nanowires were successfully synthesized on Si(111) substrates by ammoniating the Ga 2 O 3 /ZnO films at 900 °C. The structure, morphology and optical property of the as-prepared GaN nanowires were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), field-emission transmission electron microscope (FETEM), Fourier transform infrared spectrum (FTIR) and fluorescence spectrophotometer. The results show that the GaN nanowires have a hexagonal wurtzite structure with lengths of about several micrometers and diameters ranging from 30 nm to 120 nm. The representative photoluminescence spectrum at room temperature exhibited a strong emission peak at 374.1 nm and two weak emission peaks at 437.4 nm and 473.3 nm. Finally, the growth mechanism is also briefly discussed.

As-grown ZnO thin films are annealed in O 2 ambient for 15 min at the temperature of 700 °C, 800 °C, 900 °C and 1000 °C, respectively. Then the Ga 2 O 3 thin films are deposited on ZnO/Si(111) substrates by sputtering Ga 2 O 3 target in a JCK-500A radio frequency magnetron sputtering system. The low dimensional GaN nanostructured materials are obtained on Si substrates by ammoniating the Ga 2 O 3 /ZnO films at 950 °C for 15 min in a quartz tube. X-ray diffraction (XRD), Scanning electron microscope (SEM), Fourier transform infrared spectrophotometer (FTIR) and photoluminescence (PL) are used to analyze the structure, morphology and optical properties of GaN nanostructured films. The results show that their properties are investigated particularly as a function of annealing temperature of ZnO layer. The mechanism is also briefly discussed.

ZnO thin films were firstly prepared on Si(111) substrates using radio frequency magnetron sputtering system. Then the samples were annealed at different temperature in oxygen ambient and their properties were investigated particularly as a function of annealing temperature. The microstructure, morphology and optical property of ZnO films were studied by XRD, AFM, FTIR and PL. The results show that the increase of annealing temperature leads to the improvement in the crystal quality.

Single crystalline wurzite GaN nanorods are successfully synthesized on the tantalum catalyzed Si substrate by RF magnetron sputtering. The products are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared spectra (FTIR), transmission electron microscopy (TEM), selected-area electron diffraction (SAED) and photoluminescence (PL). The results show that the nanorods have a hexagonal wurtzite structure with diameters ranging from 80 to 200 nm and lengths typically up to 10 μm. The PL spectrum exhibits a strong UV light emission at 364 nm. The growth mechanism of the crystalline GaN nanorods is discussed briefly.

GaN nanorods have been successfully synthesized on Si(111) substrates by magnetron sputtering through ammoniating the Ga 2 O 3 /ZnO films at 950 °C in a quartz tube. The GaN nanorods have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), field-emission transmission electron microscope (FETEM), Fourier transform infrared (FTIR) system and fluorescence spectrophotometer. The results show that the nanorods are pure hexagonal GaN wurtzite structure with lengths of about several micrometers and diameters ranging from 100 nm to 750 nm, and the growth direction of GaN nanorods is perpendicular to (101) plane. The photoluminescence (PL) spectrum indicates that the good emission property for the nanorods. Finally, the growth mechanism is also briefly discussed.