15 results on '"Tsatsul’nikov, A. F."'
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2. Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates
3. The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas
4. Vapor phase epitaxy of aluminum nitride from trimethylaluminum and molecular nitrogen
5. Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures
6. High-efficiency InGaN/GaN/AlGaN light-emitting diodes with short-period InGaN/GaN superlattice for 530–560 nm range
7. InGaAlN heterostructures for LEDs grown on patterned sapphire substrates
8. Room-temperature photoluminescence at 1.55 μm from heterostructures with InAs/InGaAsN quantum dots on GaAs substrates
9. 1.55–1.6 μm electroluminescence of GaAs based diode structures with quantum dots
10. Multilayer structures with quantum dots in the InAs/GaAs system emitting at a wavelength of 1.3 μm
11. GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy
12. Lasing in submonolayer InAs/AlGaAs structures without external optical confinement
13. Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm
14. Room-Temperature Photoluminescence at 1.55μm from Heterostructures with InAs/InGaAsN Quantum Dots on GaAs Substrates.
15. 1.55–1.6μm Electroluminescence of GaAs Based Diode Structures with Quantum Dots.
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