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Your search keyword '"Il'ichev, E."' showing total 14 results
Start Over Author "Il'ichev, E." Journal technical physics letters
14 results on '"Il'ichev, E."'

11. Diamond Photocathodes As Field-Emission Electrodes for Vacuum Microelectronics.

Author

Il'ichev, E. A., Kuleshov, A. E., Petrukhin, G. N., Minakov, P. V., Rychkov, G. S., Sen', V. V., and Teverovskaya, E. G.

Subjects
*PHOTOCATHODES, *PHOTOMULTIPLIERS, *MICROELECTRONICS, *DIAMONDS, *ELECTRODES, *ELECTRON gun
Abstract

The use of diamond photocathodes and electron flow multipliers in high-frequency vacuum micro- and nanoelectronics is discussed. Vacuum microtriode (microtube) and electron gun for integrated travelling-wave tube amplifiers are considered as the main devices of this kind. [ABSTRACT FROM AUTHOR]

Published
2021
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13. The photoemissive cell of a vacuum ultraviolet radiation detector array.

Author

Il'ichev, E., Kuleshov, A., Nabiev, R., Petrukhin, G., Rychkov, G., and Teverovskaya, E.

Subjects
*PHOTOEMISSIVE devices, *PHOTOEMISSION, *FAR ultraviolet radiation, *DETECTORS, *SOLAR cells
Abstract

A photoemissive 'solar-blind' cell of a vacuum ultraviolet detector array for the 50-225 nm wavelength range is described. The cell is a cavity in the shape of frustum of a pyramid in a silicon wafer, the walls of which are coated by polycrystalline diamond film acting the part of a photosensitive cathode. The design of the cell allows one to manage the work of the detector in the 'pass through' mode; i.e., photons fall to one side of the wafer, and photoelectrons release from its opposite side. Estimation of photosensitivity of the cell gives a value of about ten photons. [ABSTRACT FROM AUTHOR]

Published
2017
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14. Peculiarities of graphene layer formation from amorphous carbon and silicon-carbon films.

Author

Il'ichev, E., Kirilenko, E., Petrukhin, G., Rychkov, G., Sakharov, O., Khamdokhov, E., Chernyavskaya, E., Shupegin, M., and Shchekin, A.

Subjects
*GRAPHENE, *CARBON films, *SILICON films, *THERMOPHORESIS, *PHASE transitions, *ATOMS
Abstract

Graphene layers on device structures have been formed from amorphous carbon and silicon-carbon films using a sequence of technological procedures, including thermodiffusion of carbon atoms, their accumulation at the heteroboundary between layers with significantly different diffusion coefficients, and subsequent phase transition from a carbon quasi-liquid to graphene layer. [ABSTRACT FROM AUTHOR]

Published
2014
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