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We have studied the resistive switching in memristive structures based on 40-nm-thick yttria-stabilized zirconia (YSZ) films exposed to 6-keV Si+ ion irradiation to a total dose of 5.4 × 1015 cm–2. It is established that the ion irradiation leads to increased stability of the parameters of resistive switching in YSZ based memristive structures. This effect is related to the fact that the diameter of conducting filaments in irradiated structures is limited by lateral dimensions of the region of atomic displacement cascades (i.e., the region occupied by point defects produced by bombarding ions). The oxidation of ion-modified filaments during resistive switching proceeds more effectively and leads to increasing resistance in the high-resistance state of memristive structures.

We have studied Au/SiOx/TiN/Ti memristive structures obtained by magnetron sputtering, which exhibit a reproducible resistive switching effect. The influence of the thickness and stoichiometry of SiOx layer and the area of Au electrode on the parameters of switching has been analyzed. The obtained results show evidence in favor of the filament model of resistive switching in SiOx films.

Transmission electron-microscopy examination revealed the appearance of a hexagonal silicon (9R polytype) inclusions in the subsrface silicon layer upon ion implantation and subsequent heat treatment of the SiO2/Si structure. The formation of this hexagonal phase is stimulated by mechanical stresses arising in the heterophase system in the course of ion implantation.

The effect of irradiation with H+ and Ne+ ions with an energy of 150 keV on memristive Au/SiO x /TiN/Ti structures, which were obtained by magnetron sputtering and exhibited a reproducible resistive switching effect, is studied. It is demonstrated that the low and high resistance states remain unchanged up to a dose of 1 × 1016 cm–2 in the case of irradiation with H+ ions and a dose of ~3 × 1015 cm–2 under irradiation with Ne+ ions. The obtained results demonstrate the high tolerance of parameters of the studied memristive structures to both ionizing radiation and displacement damage.