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We have studied electroluminescence in n-GaSb/ n-AlGaAsSb/ n-GaInAsSb heterostructures with isotype heterojunctions, in which the quantum efficiency of emission is increased due to the additional production of electron-hole pairs as a result of the impact ionization that takes place near the heterointerface. The impact ionization in such heterostructures is possible due to the presence of deep wells in the energy band structure. [ABSTRACT FROM AUTHOR]

The photoluminescence (PL) of HgCdTe films grown by molecular beam epitaxy (MBE) has been studied in the 1.5–1.8 μm wavelength range. The post-growth annealing of samples for 20 h at 270°C in an inert atmosphere leads to changes in the spectrum and intensity of luminescence. The spectral changes are related to an increasing homogeneity of the film composition in depth as a result of the mutual diffusion of alloy components. An increase in the room-temperature PL intensity is due to the improved structure of annealed films. [ABSTRACT FROM AUTHOR]

The phenomenon of conversion of the conductivity type in p-type samples of the Cd[sub x]Hg[sub 1 - x]Te (0.28 ≤ x ≤ 0.55) and Zn[sub x]Cd[sub y]Hg[sub 1 - x - y]Te solid solutions bombarded by low-energy argon ions was studied. It is shown that a necessary condition for the conversion effect in Cd[sub x]Hg[sub 1 - x]Te with 0.28 ≤ x ≤ 0.39 is ion neutralization in the bombarding beam. The dependence of the conversion layer thickness in Cd[sub x]Hg[sub 1 - x]Te on the solid solution composition agrees with that predicted by the diffusion model of ion-bombardment-induced conversion of the conductivity type. [ABSTRACT FROM AUTHOR]

The spectral parameters of midinfrared LED heterostructures with an InAs active region were studied experimentally, calculated using MATLAB, and simulated in COMSOL Multiphysics. The obtained data were compared to reveal the mechanism of formation of the emission spectra of these heterostructures. The results confirm that simulation is a promising design tool for LED structures. [ABSTRACT FROM AUTHOR]

The disordering in cadmium mercury telluride solid solution films grown by molecular beam epitaxy on Si and GaAs substrates has been examined by optical transmission and photoluminescence investigations. The effect of a fundamental decrease in the disordering scale under thermal annealing and possible interplay of the observed phenomena with defects typical of films grown by molecular beam epitaxy are discussed. [ABSTRACT FROM AUTHOR]

We have studied the influence of various postgrowth treatments (annealing in helium atmosphere or mercury vapor, low-energy ion etching) on the optical and photoelectrical properties of mercury cadmium telluride (Cd xHg1 − xTe) heteroepitaxial structures for the photo- and optoelectronic devices operating in the middle infrared range (3–5 μm). It is established that the annealing in mercury vapor is optimum for improving the photoluminescence characteristics in this range. [ABSTRACT FROM AUTHOR]