Search

The first original results on the growth of quantum dots (QDs) in the InSb/InAs system by liquid phase epitaxy (LPE) are reported. The density and dimensions of QDs were studied by methods of scanning probe microscopy and atomic force microscopy. The surface density, shapes, and dimensions of LPE-grown nanoislands depend on the growth conditions (temperature, cooling rate, and solution melt-substrate contact time). In the interval of temperatures T = 420–445°C, homogeneous arrays of InSb quantum dots on InAs(100) substrates were obtained with an average height of H = 3.4 ± 1nm, a radius of R = 27.2 ± 7.5 nm, and a density of up to 1.9 × 1010 cm−2. [ABSTRACT FROM AUTHOR]

Epitaxial layers of phosphorus-rich InAs[sub 1-y-x]Sb[sub y]P[sub x] solid solutions were obtained by liquid phase epitaxy (LPE). The films with x = 0.32 were grown at 575°C on isoperiodic (100)InAs substrates. It is shown that the growth of InAsSbP layers from a phosphorus-rich liquid phase is accompanied by saturation of the phosphorus content in the solid state. InAsSbP-based diode heterostructures emitting in the 2.6-2.8 µm wavelength range were obtained, the output emission power of which is sufficient for detecting both natural and industrial gases in the atmosphere. [ABSTRACT FROM AUTHOR]