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Your search keyword '"Bazhenov, N. L."' showing total 12 results
Start Over Author "Bazhenov, N. L." Publication Year Range Last 50 years Journal technical physics letters
12 results on '"Bazhenov, N. L."'

10. Effect of annealing on the optical and photoelectrical properties of Cd xHg1 − xTe heteroepitaxial structures for the middle infrared range.

Author

Izhnin, A. I., Izhnin, I. I., Mynbaev, K. D., Ivanov-Omskiĭ, V. I., Bazhenov, N. L., Smirnov, V. A., Varavin, V. S., Mikhailov, N. N., and Sidorov, G. Yu.

Subjects
ANNEALING of crystals, MERCURY vapor, CRYSTAL etching, OPTOELECTRONIC devices, PHOTOLUMINESCENCE, PHOTOELECTRIC measurements, MERCURY cadmium tellurides, SPECTRUM analysis
Abstract

We have studied the influence of various postgrowth treatments (annealing in helium atmosphere or mercury vapor, low-energy ion etching) on the optical and photoelectrical properties of mercury cadmium telluride (Cd xHg1 − xTe) heteroepitaxial structures for the photo- and optoelectronic devices operating in the middle infrared range (3–5 μm). It is established that the annealing in mercury vapor is optimum for improving the photoluminescence characteristics in this range. [ABSTRACT FROM AUTHOR]

Published
2009
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11. Impact-ionization-stimulated electroluminescence in isotype n-GaSb/ n-AlGaAsSb/ n-GaInAsSb heterostructures.

Author

Bazhenov, N. L., Zhurtanov, B. E., Mynbaev, K. D., Astakhova, A. P., Imenkov, A. N., Mikhaĭlova, M. P., Smirnov, V. A., Stoyanov, N. D., and Yakovlev, Yu. P.

Subjects
ELECTROLUMINESCENCE, HETEROSTRUCTURES, QUANTUM efficiency, EXCITON theory, EMISSIONS (Air pollution)
Abstract

We have studied electroluminescence in n-GaSb/ n-AlGaAsSb/ n-GaInAsSb heterostructures with isotype heterojunctions, in which the quantum efficiency of emission is increased due to the additional production of electron-hole pairs as a result of the impact ionization that takes place near the heterointerface. The impact ionization in such heterostructures is possible due to the presence of deep wells in the energy band structure. [ABSTRACT FROM AUTHOR]

Published
2007
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12. Electrical Properties of Cd[sub x]Hg[sub 1 – ][sub x]Te and Zn[sub x]Cd[sub y]Hg[sub 1 – ][sub x][sub – ][sub y]Te Modified by Low-Energy Ion Bombardment.

Author

Mynbaev, K. D., Bazhenov, N. L., Smirnov, V. A., and Ivanov-Omskiı, V. I.

Subjects
SEMICONDUCTORS, CADMIUM compounds, ION bombardment
Abstract

The phenomenon of conversion of the conductivity type in p-type samples of the Cd[sub x]Hg[sub 1 - x]Te (0.28 ≤ x ≤ 0.55) and Zn[sub x]Cd[sub y]Hg[sub 1 - x - y]Te solid solutions bombarded by low-energy argon ions was studied. It is shown that a necessary condition for the conversion effect in Cd[sub x]Hg[sub 1 - x]Te with 0.28 ≤ x ≤ 0.39 is ion neutralization in the bombarding beam. The dependence of the conversion layer thickness in Cd[sub x]Hg[sub 1 - x]Te on the solid solution composition agrees with that predicted by the diffusion model of ion-bombardment-induced conversion of the conductivity type. [ABSTRACT FROM AUTHOR]

Published
2002
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